Patents by Inventor Akira Kagoshima
Akira Kagoshima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11643727Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.Type: GrantFiled: December 3, 2018Date of Patent: May 9, 2023Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Akira Kagoshima, Daisuke Shiraishi, Yuji Nagatani
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Patent number: 11538671Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.Type: GrantFiled: October 29, 2019Date of Patent: December 27, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi, Masahiro Sumiya
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Publication number: 20220328286Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.Type: ApplicationFiled: June 28, 2022Publication date: October 13, 2022Applicant: HITACHI HIGH-TECH CORPORATIONInventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi
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Patent number: 11410836Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.Type: GrantFiled: February 21, 2019Date of Patent: August 9, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi
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Patent number: 11404253Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.Type: GrantFiled: June 24, 2020Date of Patent: August 2, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ryoji Asakura, Daisuke Shiraishi, Akira Kagoshima, Satomi Inoue
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Patent number: 11289313Abstract: Provided is a plasma processing apparatus including a processing unit in which a sample is plasma processed and which includes a monitor (optical emission spectroscopy) that monitors light emission of plasma, wherein the processing unit includes a prediction model storage unit that stores a prediction model predicting a plasma processing result, and a control device in which the plasma processing result is predicted by using a prediction model selected based on light emission data and device data as an indicator of state change of the processing unit.Type: GrantFiled: September 6, 2018Date of Patent: March 29, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Shota Umeda, Keita Nogi, Akira Kagoshima, Daisuke Shiraishi
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Publication number: 20210074528Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.Type: ApplicationFiled: November 17, 2020Publication date: March 11, 2021Inventors: Ryoji Asakura, Shota Umeda, Daisuke Shiraishi, Akira Kagoshima, Satomi Inoue
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Patent number: 10872750Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.Type: GrantFiled: February 8, 2018Date of Patent: December 22, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ryoji Asakura, Shota Umeda, Daisuke Shiraishi, Akira Kagoshima, Satomi Inoue
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Publication number: 20200328067Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.Type: ApplicationFiled: June 24, 2020Publication date: October 15, 2020Inventors: Ryoji ASAKURA, Daisuke SHIRAISHI, Akira KAGOSHIMA, Satomi INOUE
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Patent number: 10734207Abstract: According to the present invention, a plasma processing apparatus includes an analysis unit that obtains wavelengths of the light correlated with a plasma processing result, selects, from the obtained wavelengths, a wavelength having a first factor that represents a deviation in an intensity distribution of the light and is larger than a first predetermined value, and predicts the plasma processing result using the selected wavelength, or an analysis unit that obtains values computed using each of light intensities of a plurality of wavelengths and correlated with the plasma processing result, selects, from the obtained values, a value having a second factor that represents a deviation in a distribution of the obtained values and is larger than a second predetermined value, and predicts the plasma processing result using the selected value.Type: GrantFiled: February 28, 2017Date of Patent: August 4, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Ryoji Asakura, Daisuke Shiraishi, Akira Kagoshima, Satomi Inoue
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Publication number: 20200066500Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.Type: ApplicationFiled: October 29, 2019Publication date: February 27, 2020Inventors: Ryoji ASAKURA, Kenji TAMAKI, Akira KAGOSHIMA, Daisuke SHIRAISHI, Masahiro SUMIYA
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Patent number: 10510519Abstract: In time-series data indicating light emission of plasma when plasma processing is carried out on a sample by generating the plasma, an analysis apparatus creates combinations of a plurality of light emission wavelengths of elements and a plurality of time intervals within a plasma processing interval and calculates, for each of the combinations of the wavelengths and the time intervals, a correlation between an average value of light emission intensity and the number of times the plasma processing is carried out on the samples for each of the combinations of the wavelengths and the time intervals that have been created. Thereafter, the data analysis apparatus selects, as a combination of the wavelength and the time interval used to observe or control the plasma processing, a combination of a wavelength of light emitting from a specific element and a specific time interval having a maximum correlation.Type: GrantFiled: February 23, 2016Date of Patent: December 17, 2019Assignee: Hitachi High-Technologies CorporationInventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi, Masahiro Sumiya
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Patent number: 10408762Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed.Type: GrantFiled: August 12, 2015Date of Patent: September 10, 2019Assignee: Hitachi High-Technologies CorporationInventors: Ryoji Asakura, Kenji Tamaki, Daisuke Shiraishi, Akira Kagoshima, Satomi Inoue
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Publication number: 20190221407Abstract: Provided is a plasma processing apparatus including a processing unit in which a sample is plasma processed and which includes a monitor (optical emission spectroscopy) that monitors light emission of plasma, wherein the processing unit includes a prediction model storage unit that stores a prediction model predicting a plasma processing result, and a control device in which the plasma processing result is predicted by using a prediction model selected based on light emission data and device data as an indicator of state change of the processing unit.Type: ApplicationFiled: September 6, 2018Publication date: July 18, 2019Inventors: Shota UMEDA, Keita NOGI, Akira KAGOSHIMA, Daisuke SHIRAISHI
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Publication number: 20190189397Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.Type: ApplicationFiled: February 21, 2019Publication date: June 20, 2019Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi
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Publication number: 20190170653Abstract: A plasma processing apparatus, plasma processing method, and plasma processing analysis method in which a suitable combination of wavelength, time interval, and etching condition parameter for control to change etching conditions is determined among wavelengths, time intervals, and changeable parameters for spectroscopic measurement data in order to ensure stable etching conditions. Specifically, a regression equation which represents the correlation between emission intensity and etching result at a wavelength and a time interval is obtained for each of two or more combinations of wavelength, time interval, and etching condition parameter. Furthermore, for each of the combinations, the amount of change is calculated from the regression equation when the value set for the etching condition parameter is changed.Type: ApplicationFiled: February 11, 2019Publication date: June 6, 2019Inventors: Ryoji ASAKURA, Kenji TAMAKI, Daisuke SHIRAISHI, Akira KAGOSHIMA, Satomi INOUE
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Patent number: 10262840Abstract: A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, stable processed results can be obtained even when variation occurs in processes.Type: GrantFiled: May 29, 2014Date of Patent: April 16, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Akira Kagoshima, Daisuke Shiraishi, Satomi Inoue, Shigeru Nakamoto, Shoji Ikuhara, Toshihiro Morisawa
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Patent number: 10262842Abstract: There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition.Type: GrantFiled: June 13, 2014Date of Patent: April 16, 2019Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Ryoji Asakura, Kenji Tamaki, Akira Kagoshima, Daisuke Shiraishi
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Publication number: 20190100840Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.Type: ApplicationFiled: December 3, 2018Publication date: April 4, 2019Inventors: Akira KAGOSHIMA, Daisuke SHIRAISHI, Yuji NAGATANI
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Publication number: 20190051502Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.Type: ApplicationFiled: February 8, 2018Publication date: February 14, 2019Inventors: Ryoji ASAKURA, Shota UMEDA, Daisuke SHIRAISHI, Akira KAGOSHIMA, Satomi INOUE