Abstract: A high-pressure discharge lamp includes a luminous tube, a translucent protective tube disposed to cover the luminous tube, and a light-cutting layer formed on an outer or inner surface of the protective Lube and includes, as a main component, metal oxide particles which absorb light having a wavelength no greater than 600 nm and allow light having a wavelength of greater than 600 nm to permeate, the light-cutting layer having optical properties that a cut ratio of light having a wavelength of 450 nm is confined to 20-50%.

Abstract: This invention provides a photocatalytic membrane and a lamp and lighting fixture using such a membrane. The membrane is formed using an ultra fine particle dispersed liquid coating method providing improved adhesion of the membrane to a base body and provides a photocatalyzer that has a satisfactory light transmission factor and a lamp and a lighting fixture using it. The membrane is made of mainly ultra fine particles of titanium oxide, which enter into the uneven surface portions of a ground layer and are closely fitted thereto via the ground layer made of a metallic oxide with an uneven surface formed on the surface is formed on the base body. When the ground layer is made of metallic oxide and porous, the uneven surface is formed on the surface of the ground layer. Concave portions of the ground layer may be penetrated to the surface of the base body or a metallic oxide structural layer provided with a lot of penetrating holes may be formed on the surface of a photocatalytic membrane.

Abstract: An incandescent lamp has an envelope including a cylindrical portion and two hemispherical portions. Each hemispherical portion includes a second order curve which has a focus and is connected at one end of the cylindrical portion, respectively. A filament is provided along the central axis of the envelope and is located within and extends beyond a space surrounded by the cylindrical portion. An optical interference layer is arranged on a surface of the envelope to reflect infrared rays and transmit visible rays.

Abstract: Four different optical interference films are formed on the outer surface of an incandescent lamp to achieve good color rendering properties at a high color temperature. A first film formed on the lamp includes high and low refractive index layers alternately stacked so that the total number of layers is n (where n is odd number greater than 5) and the optical thickness thereof is 0.12.about.0.17 .mu.m. A second film formed on the first film has the low refractive index layer and the optical thickness of 0.132.about.0.2125 .mu.m, which is calculated by the equation (K+1).times.d/2, wherein K is 1.2.about.1.5 and d is the optical thickness of each refractive index layer of the first film. A third film formed on the second film has at least a high refractive index layer. The total number of refractive index layers of the third film is an odd number of 1.about.(n-4) and the optical thickness of each refractive index layer thereof is 0.144.about.0.255 .mu.m, which is calculated by the expression (K.times.d).

Abstract: An automotive lamp comprises a glass bulb having a filament and a light interference film formed on the surface of the glass bulb. The light interference film has a high-refractive index layer and a low-refractive index layer alternately stacked on each other. Each layer has a refractive index ni and a thickness di, wherein i is equal to 1, 2, . . . k. In this case, nidi is equal to (1.+-.0.025)n.sub.2 d.sub.2, wherein i is equal to 3.about.(k-1), n.sub.1 d.sub.1 is equal to (1.+-.0.025)n.sub.2 d.sub.2, and n.sub.k d.sub.k is equal to (1.+-.0.025)n.sub.2 d.sub.2. The maximum value of the reflectance of the film is more than 91% within visible light range, and the 50% transmitting wavelength is from 515 nm to 542 nm.

Abstract: An optical interference film formed on the surface of the bulb of a lamp includes high refractive index layers and low refractive index layers alternately stacked on each other to form more than ten layers in all. Each high refractive index layer includes titanium oxide containing at least one additive selected from the group consisting of antimony (Sb), silicon (Si) and tantalum (Ta). An amount of the at least one additive is the range from 0.1% to 30% of the titanium oxide in terms of the metal atomic ratio.

Abstract: A plurality of refractive layers of an optical interference film includes at least an inner metal layer having a prescribed refractive index and an outer-most layer of a metallic nitride compound having a refractive index higher than the inner metal layer for protecting the inner metal layer from oxidation, reduction, crystallization, etc.

Abstract: A pitted light diffusive coating having an excellent light diffusion effect and a method of forming the coating and a halogen lamp with the coating are disclosed. The light diffusive coating includes pits on the surface of a continuous coating consisting of a metal oxide formed on a base, and the coating is substantially free of bubbles. The pitted light diffusive coating is formed by coating a base with an organometallic compound and a high boiling-point organic solvent and baking the coating at about 400.degree. C. to 500.degree. C. The halogen lamp has a pitted light diffusive coating formed on an infrared reflective coating on the surface of the outer vessel. Strain, caused by the difference in the thermal expansion coefficient of the structural material of the outer vessel and the structural material of the light diffusive layer occurring when the outer vessel is at a high temperature, is absorbed by the pitted structure, and peeling is prevented.

Abstract: An optical interference film being formed by alternately accumulating a low refractive index layer and a high refractive index layer having a prescribed refractive index higher than the low refractive index layer. The high refractive index layer includes at least one metal oxide selected from titanium oxide and tantalum oxide. The low refractive index layer includes silica and a prescribed amount of at least one metal oxide the same as that in the high refractive index layer to avoid inter-layer peeling of high and low refractive index layers.

Abstract: In a semiconductor integrated circuit fabrication method, isolated regions are in a silicon substrate, which is then covered with polysilicon, a passive base region is then formed, the polysilicon is selectively oxidized, the unoxidized polysilicon is then doped at first and second concentrations, a surface insulating layer is then deposited, the dopant is then diffused from the polysilicon to create further passive and active base regions, contact holes are then opened, the polysilicon above the active base is then doped, and this dopant is then diffused to create an emitter region in the active base. By employing a polysilicon layer with reduced initial thickness, this fabrication method enables precise doping with excellent control over the active base concentration, junction depth, polysilicon sheet resistance, and other parameters.

Abstract: A method of fabricating a bipolar transistor on a semiconductor substrate capable of operating at a high operating speed and formed in a compact construction. A first polycrystalline silicon layer is oxidized selectively to form areas for forming base electrodes and a collector electrode. Boron is implanted into the polycrystalline silicon layer in a high concentration to form the base electrodes, the silicon dioxide film is removed to form an opening from a region for forming an emitter, the side wall of the opening is oxidized, an inactive base is formed in the polycrystalline silicon layer, active base is formed in the inactive base by implanting boron in the inactive base. Then, the entire surface of the device is coated with an oxide film and a second polycrystalline silicon layer.

Abstract: A light diffusive coating having an excellent light diffusion effect, a method of forming the coating and a halogen lamp with the coating. The light diffusive coating includes bubbles with a continuous coating consisting of a metal oxide formed on a base. The method of forming the light diffusive coating is made by the inclusion of bubbles formed by the evaporization of a high boiling-point organic solvent within the metal oxide coating formed by the application of a combination of an organo-metallic compound with a high boiling-point organic solvent to a base surface, and the subsequent decomposition of the organo-metallic compound on baking.

Abstract: A reflection mirror includes a first interference filter layer arranged on one surface of a light permeable base for reflecting a large quantity of visible rays radiated from a light source and for transmitting a large quantity of infrared rays from the light source, a second interference filter layer arranged on the other surface of the base for transmitting a large amount of the infrared rays transmitting by the first intereference filter layer and for reflecting a large amount of the visible rays transmitted by the first interference filter layer toward the first interference filter layer. The infrared ray reflectance of the first interference filter layer is different from that of the second interference filter layer to increase the quantity of the infrared rays transmitted by the mirror through the second interference filter layer by a repeating reflection between the first and the second interference filter layers.

Abstract: In a process of fabricating a semiconductor IC device, a semiconductor substrate (1) having a first region (3) of a first conduction type which is electrically isolated is prepared, on which a polycrystalline semiconductor layer, and oxidation-resistant layers (8.sub.1, 8.sub.2) are formed in turn. In part of the first region that is not covered by the oxidation-resistant layers, second regions (6.sub.2, 6.sub.2) of a second conduction type are formed. Parts of the polycrystalline semiconductor layer that are not covered by the oxidation-resistant layers are selectively oxidized. After removal of the oxidation-resistant layers, an impurity of the second conduction type is introduced in the polycrystalline semiconductor layers, and is diffused therefrom into parts of the first regions beneath them to form therein a third region (10) and a fourth region (6.sub.1) of the second conduction. Selected parts of the surfaces of the polycrystalline layers are exposed.

Abstract: An improved bipolar semiconductor integrated circuit device which has a reduced base resistance and a reduced parasitic capacitance can be provided with a small number of manufacturing steps.A two-layered film composed of both a thin oxide film and a nitride film is formed on the surface of an impurity doped layer of a first conductivity type which is formed on a semiconductor substrate. A resist layer having an overhanging cross section is formed on a selected surface of the two-layered film. A high melting metal is deposited on the surface of the structure obtained by the above step in such manner that the metal does not cover the surface of the nitride film under the overhanging portion of the resist layer. The two-layered film under the overhanging portion of the resist layer is selectively removed to expose the surface of the impurity doped layer.

Abstract: A light diffusive coating having an excellent light diffusion effect, a method of forming the coating and a halogen lamp with the coating. The light diffusive coating includes bubbles within a continuous coating consisting of a metal oxide formed on a base. The method of forming the light diffusive coating is made by the inclusion of bubbles formed by the evaporization of a high boiling-point organic solvent within the metal oxide coating formed by the application of a combination of an organo-metallic compound with a high boiling-point organic solvent to a base surface, and the subsequent decomposition of the organo-metallic compound on baking.

Abstract: A lamp includes a glass bulb sealing a filament therein. A light interference film is formed on a surface of the bulb. The film has at least five layers and is formed by alternately stacking a low-refractive index layer comprising silicon oxide and a high-refractive index layer having a refractive index higher than said low-refractive index layer. The low-refractive index layer contains, at least one additive selected from the group consisting of phosphorus and boron.

Abstract: This invention relates to an incandescent lamp bulb comprising a visible light transmitting and infrared ray reflecting film formed on at least either one of the inside and outside of a tubular, transparent bulb, said film being composed of a lamination of alternate high and low refractive index layers, wherein the optical film thickness of any one of the high reflective index layers ranges from 0.21 to 0.31.mu., that of the topmost low refractive index layer ranges from 1/2.times.0.21 to 1/2.times.0.31.mu., that of at least one low refractive index layer ranges from 2.times.0.21 to 2.times.0.31.mu., and that of any remainder low refractive index layer ranges from 0.21 to 0.31.mu..

Abstract: A method of fabricating integrated semiconductor circuit devices with improved surface planarity. An oxidation-resistant masking layer is deposited over the surface of a semiconductor body and the walls of vertical trenches of a given width formed in the semiconductor body surface. The masking layer is removed in part from predetermined portions of the semiconductor body surface. A polycrystalline semiconductor material is deposited over the semiconductor body surface to bury the trenches, followed by continuous partial removal of the polycrystalline semiconductor material and the semiconductor body at portions corresponding to the predetermined portions of the semiconductor body surface to a predetermined surface level lower than the semiconductor body surface.

Abstract: A cutting apparatus for cutting tobacco leaves into small pieces. The cutting apparatus has a feed belt conveyor including a plurality of parallel narrow endless belts. At the tail section of the feed belt conveyor is provided a pulley on which a plurality of lower rotary cutting blades are coaxially mounted. The diameter of the blades is larger than that of the pulley and each lower cutting blade projects from between adjacent narrow endless belts. There are further provided a plurality of upper rotary cutting blades above the lower rotary cutting blades and each upper rotary cutting blade overlaps each corresponding lower rotary cutting blade. The endless belts are led to proceed from the pulley but not to proceed beyond the outfeeding edges of the lower rotary cutting blades and then return to the head section after they pass the overlap section.