Abstract: A fabrication of a damascene structure is described. A substrate having a first conductive layer formed thereon is provided. A silicon nitride type of first dielectric layer is formed on the substrate, followed by patterning the first dielectric layer to form a trench like structure. A silicon oxide type of second dielectric layer is then formed on the first dielectric layer and in the trench like structure and an air-gap is concurrently formed in the second dielectric layer that is in the trench like structure. Thereafter, the second dielectric layer is planarized until a surface of the first dielectric layer is exposed. The first dielectric layer is then removed to form a trench, followed by filling the trench with a second conductive layer.

Abstract: A method of fabricating a semiconductor device is described. A conductive layer is formed on a substrate. A spacer is formed on a sidewall of the conductive layer. A thin metallic layer is formed over the substrate. An ion implantation step is performed. A first seeding layer is formed between the first metallic layer and the conductive layer. A second seeding layer is formed between the first metallic layer and the substrate. A second metallic layer is formed over the substrate. An annealing step is performed to form a self-aligned silicide layer on the conductive layer. The first metallic layer and the second metallic layer that do not react are removed.