Patents by Inventor Akira Mase

Akira Mase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5827448
    Abstract: A ferroelectric liquid crystal device is described. The device comprises a pair of substrates, an electrode arrangement formed on the inside surface of the substrates, an orientation control surface provided on the inside surface of one of said substrates, and a blended ferroelectric liquid crystal disposed between the substrates. By suitably preparing the liquid crystal, multi-micro-domains are formed in the liquid crystal. By virtue of the multi-micro-domains, the contrast ratio and the response speed are significantly improved.
    Type: Grant
    Filed: November 13, 1991
    Date of Patent: October 27, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Akira Mase, Shunpei Yamazaki, Misao Yagi, Hitoshi Kondo, Mika Tadokoro, Hiroko Konuma, Hiroshi Sugiyama, Toshimitsu Hagiwara
  • Patent number: 5825434
    Abstract: An electro-optical device and a method for displaying an image are disclosed. A clear image with a clear profile can be displayed therein by processing input image data, for example input image data of TV broadcasting received by the device.
    Type: Grant
    Filed: February 18, 1992
    Date of Patent: October 20, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunepi Yamazaki, Akira Mase, Masaaki Hiroki, Yasuhiko Takemura
  • Patent number: 5801791
    Abstract: A method for displaying an image with a clear outline by correcting original image data of addresses in the vicinity of addresses on which a boundary line image is contained in an original image wherein the addresses on which a boundary line image is contained in an original image have maximal absolute values of gradients of brightness in the original image.
    Type: Grant
    Filed: April 8, 1997
    Date of Patent: September 1, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunepi Yamazaki, Akira Mase, Masaaki Hiroki, Yasuhiko Takemura
  • Patent number: 5784129
    Abstract: An electro-optical device includes a light amplifying portion comprising a first substrate having a transparent conductive film, a photoconductor whose electric resistance is lowered in accordance with light irradiation and a dielectric thin film, a second substrate having a transparent conductive film and a uniaxially orienting mechanism and a ferroelectric liquid crystal or antiferroelectric liquid crystal layer sandwiched between the first and second substrate, an image write-in portion comprising a display body, a mirror for splitting an image light into three color lights and light shutters for performing a switching operation between transmission and interception of the split lights, and serves to irradiate the image light through the first substrate of each light amplifying portion, an image read-out portion comprising a light source for irradiating light through the second substrate of each of the three light amplifying portions, and red, green and blue color filter portions, and an imaging portion fo
    Type: Grant
    Filed: December 14, 1995
    Date of Patent: July 21, 1998
    Assignee: Semiconductor Energy Laboratory Company, Ltd.
    Inventors: Toshimitsu Konuma, Akira Mase
  • Patent number: 5784073
    Abstract: The method of fine gradation display by an electro-optical device with little influence by difference in elemental devices, is disclosed, which is an object of the present invention. In case of an active matrix electro-optical device, a visual gradation display can be carried out by digitizing an analog image signal externally supplied by means of binary notation, by temporarily storing the digital signal thus obtained, by outputting the digital signal to a circuit of next step in a proper order, and by controlling the output timing of the signal so as to output the signal to the active matrix electro-optical device, and whereby digitally controlling the time for applying voltage to a picture element.
    Type: Grant
    Filed: February 13, 1995
    Date of Patent: July 21, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Masaaki Hiroki, Yasuhiko Takemura
  • Patent number: 5716871
    Abstract: A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.
    Type: Grant
    Filed: September 8, 1993
    Date of Patent: February 10, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Hideki Uochi, Yasuhiko Takemura
  • Patent number: 5710612
    Abstract: A liquid crystal device and a manufacturing method thereof are described. The device comprises a liquid crystal panel and an auxiliary panel formed with an IC circuit for supplying driving signals to the liquid crystal device. The auxiliary substrate is separately provided with the circuit and the function thereof is tested in advance of the assembling with the liquid crystal panel. By this procedure, the yield is substantially improved.
    Type: Grant
    Filed: March 16, 1992
    Date of Patent: January 20, 1998
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Akira Mase
  • Patent number: 5680147
    Abstract: An electro-optical device and a method of fine gradation display by an electro-optical device are disclosed.
    Type: Grant
    Filed: May 19, 1992
    Date of Patent: October 21, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Masaaki Hiroki, Yasuhiko Takemura
  • Patent number: 5666173
    Abstract: An electro-optical apparatus comprising a pair of first and second devices, which are provided in an optical path extending from a light source and a screen for outputting a picture image thereon, the first and second devices each including a pair of first and second substrates each having electrodes and leads formed thereon, which sandwich therebetween an electro-optical modulating layer (comprising for example a liquid crystal composition) and a means for orienting the liquid crystal composition at least in an initial stage. The light transmission factor of the second device changes with time rotationally in the ratios of approximately 2.sup.0 to 2.sup.1 to 2.sup.2 to . . . to 2.sup.n (n is an arbitrary natural number). Thus, it is possible to realize tonal display, reduce the overall weight of the apparatus and improve the yield.
    Type: Grant
    Filed: April 28, 1994
    Date of Patent: September 9, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akira Mase, Shunpei Yamazaki
  • Patent number: 5663631
    Abstract: A full-wave-rectifying-circuit is composed of six diodes and six transistors inversely connected in parallel with the diodes. A phase-control-circuit has three magnetic sensors each of which corresponds to one of the phase-windings and positioned so as to lag by an electric angle of 90.degree. to provide digital signals which lag an electric at an angle of 60.degree. behind the induced-phase-signal. The six transistors are driven by the digital signals to form controlled AC voltages which lag behind the induced line voltages by an electric angle 60.degree. so that the alternator increases the output power without increase of the body size.
    Type: Grant
    Filed: July 6, 1995
    Date of Patent: September 2, 1997
    Assignee: Nippondenso Co., Ltd.
    Inventors: Hiroaki Kajiura, Akira Mase
  • Patent number: 5642213
    Abstract: A liquid-crystal electro-optical device capable of compensating for the operation of any malfunctioning one of TFTs (thin-film transistors) existing within the device if such a malfunction occurs. Plural complementary TFT configurations are provided per pixel electrode. Each complementary TFT configuration consists of at least one p-channel TFT and at least one n-channel TFT. The input and output terminals of the plural complementary TFT configurations are connected in series. One of the input and output terminals is connected to the pixel electrode, while the other is connected to a first signal line. All the gate electrodes of the p-channel and n-channel TFTs included in said plural complementary TFT configurations are connected to a second signal line.
    Type: Grant
    Filed: May 20, 1994
    Date of Patent: June 24, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akira Mase, Masaaki Hiroki
  • Patent number: 5612799
    Abstract: A grey tone display and a driving method are described. The display comprises a light influencing layer, an electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected to the electrode pad at its source terminal, a p-channel field effect transistors connected to the electrode pad at its source terminal, a first control line connected to the drain terminal of the n-channel field effect transistor, a second control line connected to the drain terminal of the p-channel field effect transistor, a third control line connected to the gate terminals of the n-channel field effect transistor and the p-channel field effect transistor, and a control circuit for supplying control signals to the first, second and third control lines. By this configuration, the voltage of the electrode pad can be arbitrarily controlled by adjusting the input level at the gate terminals.
    Type: Grant
    Filed: October 13, 1995
    Date of Patent: March 18, 1997
    Assignee: Semiconductor Energy Laboratory Co., Inc.
    Inventors: Shunpei Yamazaki, Akira Mase, Masaaki Hiroki
  • Patent number: 5604137
    Abstract: A multilayer semiconductor integrated circuit which does not suffer from latchup. The circuit comprises a semiconductor substrate, a first MOS transistor formed on the substrate, an interlayer insulator deposited on the first transistor, and a second MOS transistor formed on the interlayer insulator. The two transistors have different conductivity types. The gate electrode of the second transistor consists mainly of metal or metal silicide, e.g. aluminum. The upper and side surfaces of the gate electrode is coated with a material comprising an oxide of the metal or metal silicide.
    Type: Grant
    Filed: June 2, 1995
    Date of Patent: February 18, 1997
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiko Takemura, Akira Mase, Hideki Uochi
  • Patent number: 5585949
    Abstract: A display device with over voltage protection circuits having zener diode characteristics. The protection circuits have pairs of TFTs connected to resistive dividers. Each resistive divider provide the voltage set levels for one direction of overvoltage application.
    Type: Grant
    Filed: November 3, 1994
    Date of Patent: December 17, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Masaaki Hiroki
  • Patent number: 5572047
    Abstract: A novel structure of an active electro-optic device is disclosed. The device is provided with complementary transistors therein which comprise a p-channel TFT and an n-channel TFT. In case of a liquid crystal electro-optic device, the device comprises a pair of substrates, a liquid crystal provided therebetween, picture element electrode islands arranged in matrix form and provided on one of the substrates, complementary transistors provided thereon, and signal lines provided thereon. Gate electrodes of p-channel and n-channel transistors of these complementary transistors are connected to some of the signal lines while source (or drain) electrodes thereof are connected to the electrode islands and drain (or source) electrodes thereof are connected to other signal lines.
    Type: Grant
    Filed: March 28, 1994
    Date of Patent: November 5, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaaki Hiroki, Akira Mase
  • Patent number: 5568288
    Abstract: An electro-optic device featuring an semiconductor device formed by providing an insulator over a gate electrode, and anodic oxidizing only the sides of the gate electrode.
    Type: Grant
    Filed: November 16, 1993
    Date of Patent: October 22, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Masaaki Hiroki
  • Patent number: 5568298
    Abstract: An electro-optical device is disclosed. The device comprises a first substrate provided with an electrode and a lead thereon, a second substrate provided with an electrode and a lead thereon, a liquid crystal composition exhibiting ferroelectricity, and a means for orienting the liquid crystal composition at least in its early stage. The liquid crystal composition and the means for orienting the liquid crystal composition at least in its early stage are provided between the first and second substrates, and the product (.DELTA.nd) of the value of the optic anisotropy (.DELTA.n) of the liquid crystal composition and the thickness (d) of the liquid crystal composition is adjusted to 500 to 650 nm.
    Type: Grant
    Filed: December 8, 1993
    Date of Patent: October 22, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akira Mase, Michio Shimizu
  • Patent number: 5563440
    Abstract: A multilayer semiconductor integrated circuit which does not suffer from latchup. The circuit comprises a semiconductor substrate, a first MOS transistor formed on the substrate, an interlayer insulator deposited on the first transistor, and a second MOS transistor formed on the interlayer insulator. The two transistors have different conductivity types. The gate electrode of the second transistor consists mainly of metal or metal silicide, e.g. aluminum. The upper and side surfaces of the gate electrode is coated with a material comprising an oxide of the metal or metal silicide.
    Type: Grant
    Filed: August 22, 1994
    Date of Patent: October 8, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasuhiko Takemura, Akira Mase, Hideki Uochi
  • Patent number: 5543947
    Abstract: Method of driving a liquid crystal electro-optical device in such a way that the device produces accurate gray tones with high reproducibility. In this device, a complementary TFT (thin film transistor) configuration consisting of at least one p-channel TFT and at least one n-channel TFT is formed per pixel electrode. One of the input/output terminals of this configuration is connected to the pixel electrode. The other is connected to a first signal line. All the gate electrodes of the TFTs of the configuration are connected to a second signal line. High-speed pulses are applied to one of the input/output terminals of the TFT configuration via the first signal line. A high-speed bipolar signal is applied to the gate electrodes in synchronism with the pulses, to electrically charge the pixel. After the completion of the charging, the bipolar signal is again applied to the gate electrodes to discharge the pixel. This series of operations is repeated to produce halftones.
    Type: Grant
    Filed: May 10, 1994
    Date of Patent: August 6, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akira Mase, Masaaki Hiroki, Yasuhiko Takemura, Shunpei Yamazaki
  • Patent number: 5541749
    Abstract: A reflective-type liquid crystal device including a first substrate; a plurality of color layers formed on the substrate and arranged in the form of a matrix; a first electrode arrangement formed on the substrate; a light modulating layer including a dispersion-type liquid crystal adjacent the first electrode arrangement; a second electrode arrangement opposite to the first electrode arrangement with the light modulating layer therebetween; and a plurality of thin film transistors for switching the light modulating layer.
    Type: Grant
    Filed: April 15, 1994
    Date of Patent: July 30, 1996
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshimitsu Konuma, Michio Shimuzu, Akira Mase, Takeshi Nishi, Shunpei Yamazaki