Abstract: The present invention provides a guide apparatus including a guide member located on a base, and a moving member movable along the guide member. The guide apparatus comprising a plurality of plate members each including a portion facing the base and extending from the portion in a direction to separate from the base, wherein the plurality of plate members are located apart from each other in a direction to separate from the moving member.

Abstract: A stage apparatus has a base; a movable portion including a stage movable relative to the base; a flexible utility line for supplying utility to the movable portion; and a cover for covering the utility line, the cover including: a housing member provided to one of the base and the movable portion, in which an opening is formed; and a sealing member provided to the other of the base and the movable portion, which is arranged opposite to a side, in which the opening is formed, of the housing member with a gap therebetween, and has a side for sealing the opening.

Abstract: The present invention provides a driving apparatus including an axis member supported on a base, and a movable member movable along the axis member, comprising a plurality of plate members each including a through-hole through which the axis member penetrates and surrounding the axis member, wherein the plurality of plate members are located apart from each other in a moving direction of the movable member.

Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction tube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.

Abstract: The present invention provides a holding apparatus which includes a base having, on a surface thereof, a convex portion for supporting a back surface of a substrate and a containing portion for containing a liquid, and supports the substrate via the convex portion and the liquid, the apparatus including a heat storage structure including a latent heat storage member configured to store heat transferred from the substrate, and arranged in the containing portion, and a member configured to exert, to the heat storage structure, a force in a first direction from the base to the substrate.

Abstract: A stage apparatus has a base; a movable portion including a stage movable relative to the base; a flexible utility line for supplying utility to the movable portion; and a cover for covering the utility line, the cover including: a housing member provided to one of the base and the movable portion, in which an opening is formed; and a sealing member provided to the other of the base and the movable portion, which is arranged opposite to a side, in which the opening is formed, of the housing member with a gap therebetween, and has a side for sealing the opening.

Abstract: The present invention provides a driving apparatus including an axis member supported on a base, and a movable member movable along the axis member, comprising a plurality of plate members each including a through-hole through which the axis member penetrates and surrounding the axis member, wherein the plurality of plate members are located apart from each other in a moving direction of the movable member.

Abstract: The present invention provides a guide apparatus including a guide member located on a base, and a moving member movable along the guide member. The guide apparatus comprising a plurality of plate members each including a portion facing the base and extending from the portion in a direction to separate from the base, wherein the plurality of plate members are located apart from each other in a direction to separate from the moving member.

Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.

Abstract: Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.

Abstract: A heat-treating apparatus capable of realizing a highly precise processing maintaining a high degree of safety, and a method of producing substrates are provided. The heat-treating apparatus comprises a reaction tube for treating substrates; a manifold for supporting the reaction tube; and a heater provided surrounding the reaction tube to heat the interior of reaction tube; wherein the reaction tube and the manifold are in contact with each other as their continuous flat surfaces come in contact with each other; a cover member is provided to cover the contact portion between the reaction tube and the manifold from the outer side; and the cover member is provided with at least either a gas feed port or an exhaust port communicated with a space formed among the cover member, the reaction tube and the manifold.

Abstract: A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus (10) is provided with a reaction tube (42) for treating a substrate (54), a quartz adaptor (44) for supporting the reaction tube (42), a nozzle (66) connected to the adaptor (44) for supplying a treatment gas into the reaction tube (42), and a heater (46) provided outside the reaction tube (42) for heating inside the reaction tube (42). The nozzle (66) is connected to an upper plane of the adaptor (44) in the reaction lube (42) at least a part which is of the nozzle (66) and is connected with the adaptor (44) is made of quartz and other nozzle parts are made of silicon carbide.

Abstract: Heat treatment apparatus and a method of manufacturing a substrate are provided, in which drop of particles produced by a rubbing action between a support strip and a support member can be prevented. Heat treatment apparatus 10 has a reactor 40 for treating a substrate, and a support tool 30 for supporting the substrate 54 in the reactor 40. The support tool 30 has a support part 57 to be contacted to the substrate 54, and a support strip 67 for supporting the support part 57. A back of the support part 57 has a convex portion or a concave portion, and the back of the support part 54 is configured to be not contacted to an edge of the support strip 67, and contacted to a top of the support strip 67 at inner than the edge of the support strip 67.

Abstract: A heat treatment device where intervals between substrates supported by a supporter is reduced so that the number of substrates to be treated can be increased. A heat treatment device has a reaction furnace for treating substrates and a supporter for supporting the substrates in plural stages in the reaction furnace. The supporter has supporting plates in contact with the substrates and supporting members for supporting the supporting plates. A supporting plate and a supporting member are superposed on each other at least a part in the thickness direction.

Abstract: A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BCl3 to the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl3. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.

Abstract: A semiconductor device fabricating method for forming a boron doped silicon film includes the step of forming the boron doped silicon film on a substrate at an inner temperature of the reaction furnace ranging from about 460 to 600° C. or at an average velocity of reaction gases in the reaction furnace being not great than about 2200 cm/min. Further, a substrate processing apparatus for forming a boron doped silicon film on a substrate includes a gas supply line for supplying BCl3 to the reaction furnace. The gas supply line is installed in a portion of the reaction furnace opposite to a heater, and has an outlet for discharging BCl3. The outlet of the gas supply line is provided at an upstream side of gas flow in the reaction furnace.

Abstract: A substrate processing apparatus can efficiently use a gas supplied into a reaction tube by improving a shape of a gas nozzle. A cylinder reaction tube 12 is vertically disposed, and openings of a furnace opening flange 13 is airtightly sealed with a seal cap 14, and a boat 15 onto which wafers W as substrates are loaded in a multi-storied fashion is inserted into the reaction tube 12. A gas is supplied from a nozzle 21 to a plurality of wafers W in the cylindrical reaction tube 12 to deposit a thin film on the wafers W. The nozzle 21 is provided creepingly along an inner wall 22 of the tube in a tube axial direction of the cylinder reaction tube 12. In addition, the nozzle 21 has a nozzle space therein which has an extent of 45° or more and 180° or less in a circumferential direction within the tube. A plurality of gas nozzle openings 24 of the nozzle 21 are provided such that the nozzle openings 24 correspond to the respective wafers W so that a gas flows on the respective wafers W.