Patents by Inventor Akira Ohuchi

Akira Ohuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7902678
    Abstract: Electrode pads (5) and a solder resist (7) are disposed on the upper surface of a wiring board (1), and apertures (7a) are formed in the solder resist (7) so as to expose the electrode pads (5). Electrodes (4) are disposed on the lower surface of a semiconductor element (2). Electrodes (4) are connected to the electrode pads (5) by way of bumps (3). An underfill resin (6) is disposed in the area that excludes the solder resist (7) and the bumps (3) in the space between the wiring board (1) and the semiconductor element (2). Between the wiring board (1) and the semiconductor element (2), the thickness (B) of the solder resist (7) is equal to or greater than the thickness (A) of the underfill resin (6) on the solder resist (7). The volume (Vb) of the bumps (3) is less than the volume (Vs) of the apertures (7a).
    Type: Grant
    Filed: January 12, 2005
    Date of Patent: March 8, 2011
    Assignee: NEC Corporation
    Inventors: Akira Ohuchi, Tomoo Murakami
  • Publication number: 20080251942
    Abstract: Electrode pads (5) and a solder resist (7) are disposed on the upper surface of a wiring board (1), and apertures (7a) are formed in the solder resist (7) so as to expose the electrode pads (5). Electrodes (4) are disposed on the lower surface of a semiconductor element (2). Electrodes (4) are connected to the electrode pads (5) by way of bumps (3). An underfill resin (6) is disposed in the area that excludes the solder resist (7) and the bumps (3) in the space between the wiring board (1) and the semiconductor element (2). Between the wiring board (1) and the semiconductor element (2), the thickness (B) of the solder resist (7) is equal to or greater than the thickness (A) of the underfill resin (6) on the solder resist (7). The volume (Vb) of the bumps (3) is less than the volume (Vs) of the apertures (7a).
    Type: Application
    Filed: January 12, 2005
    Publication date: October 16, 2008
    Inventors: Akira Ohuchi, Tomoo Murakami
  • Patent number: 6590287
    Abstract: A packaging structure and a packaging method reworkable even after the formal curing and good in connection reliability, characterized in that an electrode 8 of a semiconductor device 6 and an electrode 7 of a substrate 1 are electrically connected via bumps 5, a first resin 3 decreasing in mechanical strength and becoming reworkable under given conditions and a second resin 4 capable of mitigating the stress due to a difference in thermal expansion coefficient between the semiconductor device 6 and the substrate 1 and superior in mechanical strength to the first resin under the given conditions are stacked and formed in the gap between the semiconductor device 6 and the substrate 1 and moreover the first resin 3 is formed at a thickness of less than a half of said gap in total on the surface of at least either of the semiconductor device 6 and the substrate 1.
    Type: Grant
    Filed: August 1, 2001
    Date of Patent: July 8, 2003
    Assignee: NEC Corporation
    Inventor: Akira Ohuchi
  • Publication number: 20020033525
    Abstract: A packaging structure and a packaging method reworkable even after the formal curing and good in connection reliability, characterized in that an electrode 8 of a semiconductor device 6 and an electrode 7 of a substrate 1 are electrically connected via bumps 5, a first resin 3 decreasing in mechanical strength and becoming reworkable under given conditions and a second resin 4 capable of mitigating the stress due to a difference in thermal expansion coefficient between the semiconductor device 6 and the substrate land superior in mechanical strength to the first resin under the given conditions are stacked and formed in the gap between the semiconductor device 6 and the substrate 1 and moreover the first resin 3 is formed at a thickness of less than a half of said gap in total on the surface of at least either of the semiconductor device 6 and the substrate 1.
    Type: Application
    Filed: August 1, 2001
    Publication date: March 21, 2002
    Applicant: NEC Corporation
    Inventor: Akira Ohuchi