Patents by Inventor Akira Sasakura

Akira Sasakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of manufacturing same
    Patent number: 9716183
    Abstract: A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the substrate (1); a gate dielectric layer (5) formed on the gate electrode (3); an island-shaped oxide semiconductor layer (7) formed on the gate dielectric layer (5); a protective layer (9) provided so as to cover an upper face (7u) and an entire side face (7e) of the oxide semiconductor layer (7), the protective layer (9) having a single opening (9p) through which the upper face (7u) of the oxide semiconductor layer (7) is only partially exposed; and a source electrode (11) and a drain electrode (13) which are in contact with the oxide semiconductor layer (7) within the single opening (9p).
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: July 25, 2017
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Hirohiko Nishiki, Akira Sasakura, Tohru Okabe
  • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
    Publication number: 20170018646
    Abstract: A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the substrate (1); a gate dielectric layer (5) formed on the gate electrode (3); an island-shaped oxide semiconductor layer (7) formed on the gate dielectric layer (5); a protective layer (9) provided so as to cover an upper face (7u) and an entire side face (7e) of the oxide semiconductor layer (7), the protective layer (9) having a single opening (9p) through which the upper face (7u) of the oxide semiconductor layer (7) is only partially exposed; and a source electrode (11) and a drain electrode (13) which are in contact with the oxide semiconductor layer (7) within the single opening (9p).
    Type: Application
    Filed: March 10, 2015
    Publication date: January 19, 2017
    Inventors: Hirohiko NISHIKI, Akira SASAKURA, Tohru OKABE
  • Ionizer
    Patent number: 6403040
    Abstract: The main object of the present invention is to provide an ionizer that has been improved to allow reduction of ripples and of balance shift without degrading the capability of an ionizer. A grounded ground electrode that makes contact with the ions for capturing a portion of the ions is provided in the vicinity of a discharge electrode. Means for changing the area of contact between ground electrode and the ions is provided.
    Type: Grant
    Filed: January 17, 2001
    Date of Patent: June 11, 2002
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Akira Sasakura, Yasuo Mizokoshi
  • Ionizer
    Publication number: 20020037243
    Abstract: The main object of the present invention is to provide an ionizer that has been improved to allow reduction of ripples and of balance shift without degrading the capability of an ionizer. A grounded ground electrode that makes contact with the ions for capturing a portion of the ions is provided in the vicinity of a discharge electrode. Means for changing the area of contact between ground electrode and the ions is provided.
    Type: Application
    Filed: January 17, 2001
    Publication date: March 28, 2002
    Inventors: Akira Sasakura, Yasuo Mizokoshi