Abstract: A memory system in embodiments includes a nonvolatile semiconductor memory that stores user data, a forward lookup address translation table and a reverse lookup address translation table, and a controller. The controller is configured to determine that the user data stored in the nonvolatile semiconductor memory is valid or invalid based on these two tables. The controller may perform data organizing of selecting data determined valid and rewriting the data in a new block. The controller may perform write processing and rewriting processing to the new block alternately at a predetermined ratio. The controller may determine whether a predetermined condition is satisfied on a basis of addresses included in write requests and write data in the MLC mode when the condition is satisfied and write data in the SLC mode when the condition is not satisfied.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory, an interface, a register, and a controller. The nonvolatile memory stores communication speed information. The interface communicates with a host. The register is included in the interface. The controller controls the nonvolatile memory and the interface. The controller reads the speed information from the nonvolatile memory and sets the speed information in the register when the device is started, and the interface communicates with the host based on the speed information set in the register.

Abstract: According to one embodiment, a storage device includes a nonvolatile memory, an interface, a register, and a controller. The nonvolatile memory stores communication speed information. The interface communicates with a host. The register is included in the interface. The controller controls the nonvolatile memory and the interface. The controller reads the speed information from the nonvolatile memory and sets the speed information in the register when the device is started, and the interface communicates with the host based on the speed information set in the register.

Abstract: A memory system in embodiments includes a nonvolatile semiconductor memory that stores user data, a forward lookup address translation table and a reverse lookup address translation table, and a controller. The controller is configured to determine that the user data stored in the nonvolatile semiconductor memory is valid or invalid based on these two tables. The controller may perform data organizing of selecting data determined valid and rewriting the data in a new block. The controller may perform write processing and rewriting processing to the new block alternately at a predetermined ratio. The controller may determine whether a predetermined condition is satisfied on a basis of addresses included in write requests and write data in the MLC mode when the condition is satisfied and write data in the SLC mode when the condition is not satisfied.

Abstract: The present invention has an display section for displaying an operation state of a program to a user in a time series manner based on program execution history information, an input section for allowing the user to designate a portion of a defect in the displayed operation sate, and an operation analysis section for analyzing a cause of the defect from the portion of the defect pointed out from the user by the input section and from the operation state of the program, and for specifying a solution for solving the cause of the defect. The operation analysis section regenerates the operation state on which the specified solution is reflected, and the display section displays the cause of the defect, the solution and the regenerated operation state to the user.

Abstract: The present invention has an display section for displaying an operation state of a program to a user in a time series manner based on program execution history information, an input section for allowing the user to designate a portion of a defect in the displayed operation sate, and an operation analysis section for analyzing a cause of the defect from the portion of the defect pointed out from the user by the input section and from the operation state of the program, and for specifying a solution for solving the cause of the defect. The operation analysis section regenerates the operation state on which the specified solution is reflected, and the display section displays the cause of the defect, the solution and the regenerated operation state to the user.

Abstract: A superconductor is produced by electric discharge explosion flame spraying of a composite body of constituents of an immiscible alloy. The electrically discharged composite body is deposited on a substrate and the resultant alloy is oxidized to yield an oxide of the alloy having superconductive property. This process can be applied to the Ln-Ba-Cu system (Ln is at least one of the rare earth elements including Y), typically the Y.sub.1 Ba.sub.2 Cu.sub.3 - or Y.sub.2 Ba.sub.4 Cu.sub.8 system, or other immiscible alloy systems such as the Bi-(Ca, Sr)-Cu system to form an oxide thereof.

Abstract: This invention relates to high-hardness, high-toughness, high-density composite materials containing diamond, and a process for making such materials comprising applying shock compression to the composite powders and inducing an exothermic chemical reaction. The process is useful in making metal, ceramic and cermet diamond composite materials.

Abstract: This invention relates to the manufacture of compacts of ceramic composition, cermets, and other high hardness materials by applying explosive shock during exothermic sintering of such powders.

Abstract: A composite sintered compact containing high density boron nitride, which consists of zincblende-type boron nitride, wurtzite-type boron nitride, ceramic material and metal in a specifically limited mixing ratio and has a high abrasion resistance, can be obtained under a relatively mild sintering condition and can be easily worked into a cutting tool.

Abstract: A sintered compact of boron nitride with high density form having high oxidation resistance, water resistance, compressive strength and hardness can be obtained by sintering wurtzite-structured boron nitride together with a boride of titanium, zirconium or hafnium, or with mixtures thereof under a condition of high temperature and high pressure.

Abstract: An apparatus for generating shock waves by means of a supersonic projectile to effect, for example, phase transformation of a substance. A hammer in a cylinder is accelerated by introduction of compressed air into the cylinder, whereby a plunger formed integrally with the hammer at one end thereof is thrust into a hydraulic pressure chamber filled with a liquid and disposed coaxially with the cylinder. Thereupon, a high hydraulic pressure is generated in a hydraulic pressure chamber, and this hydraulic pressure accelerates a piston in a piston chamber connected with the hydraulic pressure chamber. The piston in turn compresses a light gas adiabatically to a high pressure, and a projectile fitted at one end of a barrel is thrust forward under the force of this high-pressure gas.