Abstract: According to one embodiment, a radar device comprises a panel including clusters and a controller. The controller is configured to cause a first cluster of the clusters to transmit an electromagnetic wave to a target, cause the first cluster and at least one second cluster adjacent to the first cluster to receive a reflected wave from the target, and cause the first cluster and the at least one second cluster to output a reception signal. At least one cluster other than the first cluster and other than the at least one second cluster does not output the reception signal.

Abstract: According to one embodiment, an inspection system includes an estimation device and a detection device. The estimation device is configured to estimate an inspection range having a possibility that a predetermined object is present. The detection device is configured to generate detection information as to whether or not the predetermined object is present in the inspection range.

Abstract: The present invention provides a method for inexpensively, efficiently, safely, and continuously producing COF2, without using highly toxic raw materials such as phosgene or difficult-to-get raw materials, with no risk of explosion or the like. Tetrafluoroethylene gas and oxygen gas are introduced into a reactor, and they are then heated in a gas phase in the absence of nitrogen gas for reaction, so as to produce carbonyl fluoride. The reactor is preferably a tubular reaction tube. As such tetrafluoroethylene gas, unpurified or purified tetrafluoroethylene gas obtained by heating HCFC-22 gas for thermal decomposition can be used. According to the present invention, COF2 that is useful as cleaning gas for CVD devices (chemical vapor deposition method) can be inexpensively, efficiently, and safely produced.

Abstract: An object is to provide a method for producing 1,1,1,4,4,4-hexafluoro-2-butene with high efficiency, which is suitable for a flow reaction, and cis-1,1,1,4,4,4-hexafluoro-2-butene can be efficiently obtained when isomerization of hexafluoro-1,3-butadiene is conducted using a catalyst and the resultant mixture is successively subjected to catalytic hydrogenation to produce cis-1,1,1,4,4,4-hexafluoro-2-butene, wherein the whole process is performed by a flow catalytic reaction.

Abstract: A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

Abstract: An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

Abstract: [Problem] To provide a method of producing a pretreated metal fluoride containing impurities such as oxygen in decreased amounts and a fluoride crystal containing impurities such as oxygen in decreased amounts and having excellent optical properties such as transparency. [Means for Solution] A metal fluoride is heated in a temperature range of not lower than 300° K. but not higher than 1780° K in the co-presence of a carbonyl fluoride of an amount of not less than 1/100 mol per mol of the metal fluoride to thereby obtain a pretreated metal fluoride while removing oxygen and water from the starting metal fluoride and from the interior of the production furnace. Further, the pretreated metal fluoride as a starting material is heated and melted, and a fluoride crystal of a high quality is obtained from the obtained melt by a crystal growing method such as a melt pull-up method or a melt pull-down method.

Abstract: The present invention provides a method for inexpensively, efficiently, safely, and continuously producing COF2, without using highly toxic raw materials such as phosgene or difficult-to-get raw materials, with no risk of explosion or the like. Tetrafluoroethylene gas and oxygen gas are introduced into a reactor, and they are then heated in a gas phase in the absence of nitrogen gas for reaction, so as to produce carbonyl fluoride. The reactor is preferably a tubular reaction tube. As such tetrafluoroethylene gas, unpurified or purified tetrafluoroethylene gas obtained by heating HCFC-22 gas for thermal decomposition can be used. According to the present invention, COF2 that is useful as cleaning gas for CVD devices (chemical vapor deposition method) can be inexpensively, efficiently, and safely produced.

Abstract: A method for the preparation of a novel fluorinated compound, particularly 1,1,1,3,3-pentafluoropropane (HFC-245fa), by using a fluorination catalyst obtained by treating a metal salt containing a chromium salt such as chromium oxide with chlorine gas and/or oxygen gas. Examples of the metal salt may include, besides a chromium salt, one or more catalytically active metal salts selected from magnesium salts, aluminum salts, zinc salts, sodium salts, nickel salts, iron salts, cobalt salts, vanadium salts, manganese salts and copper salts.

Abstract: A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma.

Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Abstract: A method for removing harmful substances in a vent gas containing a halogen or halogen compound gas remaining in the pipeline of a cylinder cabinet, which comprises contacting the vent gas with a treating agent comprising an alkaline earth metal compound, an alkali metal compound, zeolite, and a carbonaceous material.

Abstract: A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cleaning gas includes 100% by volume of fluorine gas which gas can generate plasma by electric discharge. When 100% by volume of fluorine gas is plasma-generated by electric discharge and then used as a cleaning gas, an extremely excellent etching rate can be attained and further plasma can be stably generated even in the total gas flow rate of 1000 sccm and at a chamber pressure of 400 Pa. Further, the uniformity of cleaning can be also ensured in the above conditions. Additionally the fluorine gas concentration is 100% so that the apparatus is not complicated and thereby the cleaning gas has excellent practicability.

Abstract: A porous aluminum fluoride on which SbClxF5-x (wherein x represents a numeral of 0 to 5) is supported, SbClxF5-x being obtainable by supporting SbCl5, or the like on a porous aluminum fluoride and treating it with hydrogen fluoride. The resulting porous aluminum fluoride has a high activity as a fluorinating agent, a fluorination catalyst, or the like, is easy to handle, can be used for a flow-type reaction, and also can be used even at a high temperature.

Abstract: The present invention provides a novel fluorination catalyst that has high stability at high temperatures, is easily regenerated and is superior in catalytic activity and selectivity and a method for the preparation of the fluorination catalyst. The present invention also provides a method for the preparation of a novel fluorinated compound, and particularly, 1,1,1,3,3-pentafluoropropane (HFC-245fa), by using the catalyst. The fluorination catalyst of the present invention is obtained by treating a metal salt containing a chromium salt such as chromium oxide with chlorine gas and/or oxygen gas. Examples of the metal salt may include, besides a chromium salt, one or more catalytically active metal salts selected from magnesium salts, aluminum salts, zinc salts, sodium salts, nickel salts, iron salts, cobalt salts, vanadium salts, manganese salts and copper salts.

Abstract: A chamber-cleaning gas and an etching gas used for a silicon-containing film according to the present invention comprise a perfluoro cyclic ether having 2 to 4 carbon atoms which are ether-linked with carbon atoms. The chamber-cleaning gas and the etching gas hardly generate a harmful waste gas, such as CF4, which is one of the causes for global warming so that they are good for environment. Further, they are a non-toxic gas or a volatile liquid, and are easy to use and are excellent in treatment of waste gas. Additionally, the chamber-cleaning gas of the present invention has an excellent cleaning rate.

Abstract: An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

Abstract: The process for producing carbonyl fluoride according to the invention is a process for safely and easily producing high-purity carbonyl fluoride having a low content of carbon tetrafluoride, and comprises feeding carbon monoxide and fluorine to a reactor and allowing carbon monoxide to react with fluorine under the conditions of a reactor internal pressure of less than atmospheric pressure.

Abstract: A method for removing harmful substances in a vent gas containing a halogen or halogen compound gas remaining in the pipeline of a cylinder cabinet, which comprises contacting the vent gas with a treating agent comprising an alkaline earth metal compound, an alkali metal compound, zeolite, and a carbonaceous material.

Abstract: It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined.