Patents by Inventor Akira Shibue
Akira Shibue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8435645Abstract: A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.Type: GrantFiled: March 19, 2010Date of Patent: May 7, 2013Assignee: TDK CorporationInventors: Akira Shibue, Tomohiko Kato, Shinichiro Kakei, Yasunobu Oikawa, Kenji Horino
-
Patent number: 8315038Abstract: A thin-film capacitor has a high insulation resistance value with high reliability. The thin-film capacitor includes a dielectric thin film and electrodes opposing each other through the dielectric thin film, the dielectric thin film containing a perovskite-type composite oxide having a composition expressed by (1), Mn, and at least one kind of element M selected from V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3??(1) where A is at least one kind of element selected from Ba, Sr, Ca, and Pb, B is at least one kind of element selected from Ti, Zr, Hf, and Sn, and 0.97?y?0.995.Type: GrantFiled: April 8, 2010Date of Patent: November 20, 2012Assignee: TDK CorporationInventors: Hitoshi Saita, Naoto Tsukamoto, Akira Shibue, Kenji Horino
-
Patent number: 8218287Abstract: A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.Type: GrantFiled: March 19, 2010Date of Patent: July 10, 2012Assignee: TDK CorporationInventors: Akira Shibue, Yoshihiko Yano, Hitoshi Saita, Kenji Horino
-
Publication number: 20100265632Abstract: The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.Type: ApplicationFiled: April 8, 2010Publication date: October 21, 2010Applicant: TDK CORPORATIONInventors: Hitoshi SAITA, Naoto TSUKAMOTO, Akira SHIBUE, Kenji HORINO
-
Publication number: 20100260981Abstract: A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.Type: ApplicationFiled: March 19, 2010Publication date: October 14, 2010Applicant: TDK CORPORATIONInventors: Akira SHIBUE, Tomohiko KATO, Shinichiro KAKEI, Yasunobu OIKAWA, Kenji HORINO
-
Publication number: 20100246092Abstract: A thin-film device comprises a base electrode made of a metal, a first dielectric layer, a first inner electrode, a second dielectric layer, a second inner electrode, and a third dielectric layer. Letting T1 be the thickness of the lowermost first dielectric layer in contact with the base electrode in the plurality of dielectric layers, and Tmin be the thickness of the thinnest dielectric layer in the plurality of dielectric layers excluding the first dielectric layer, T1>Tmin. Making the first dielectric layer thicker than the thinnest, dielectric layer in the other dielectric layers can increase the distance between a metal part projecting from a metal surface because of the surface roughness of the base electrode and the inner electrode mounted on the lowermost dielectric layer, thereby reducing leakage currents.Type: ApplicationFiled: March 19, 2010Publication date: September 30, 2010Applicant: TDK CorporationInventors: Akira SHIBUE, Yoshihiko Yano, Hitoshi Saita, Kenji Horino
-
Publication number: 20090246361Abstract: The present invention provides a method for manufacturing a dielectric element in which a dielectric film is formed by a chemical solution deposition method, with enhanced tolerance of the dielectric film of wet processes. A method for manufacturing a dielectric element comprises a process of heating a film of a solution of a precursor on a metal layer in an oxidizing atmosphere, to form a calcined film comprising a dielectric material generated from the precursor, and a process of annealing the calcined film to form a dielectric film comprising the dielectric material that has been crystallized. The dielectric material is a metal oxide which forms a perovskite-structure crystal having A sites and B sites. The solution of the precursor comprises an element occupying A sites and an element occupying B sites in the dielectric film, at a molar ratio of the element occupying A sites to the element occupying B sites of 0.85 or higher and 1.00 or lower.Type: ApplicationFiled: March 24, 2009Publication date: October 1, 2009Applicant: TDK CORPORATIONInventors: Hitoshi SAITA, Naoto TSUKAMOTO, Akira SHIBUE, Kenji HORINO
-
Patent number: 7553765Abstract: A method of manufacturing a thin-film electronic device comprising providing a dielectric layer on a base, providing a first electrically conductive layer having a first opening and covering at least part of the dielectric layer; and forming a first through-hole extending through the base and communicating with the first opening. A second electrically conductive layer may be provided on the base, and a dielectric layer may be provided so as to cover at least part of this second conductive layer.Type: GrantFiled: July 21, 2006Date of Patent: June 30, 2009Assignee: TDK CorporationInventors: Eiju Komuro, Osamu Shinoura, Yumiko Ozaki, Akira Shibue
-
Publication number: 20070026581Abstract: A method of manufacturing a thin-film electronic device comprising providing a dielectric layer on a base, providing a first electrically conductive layer having a first opening and covering at least part of the dielectric layer; and forming a first through-hole extending through the base and communicating with the first opening. A second electrically conductive layer may be provided on the base, and a dielectric layer may be provided so as to cover at least part of this second conductive layer.Type: ApplicationFiled: July 21, 2006Publication date: February 1, 2007Applicant: TDK CORPORATIONInventors: Eiju Komuro, Osamu Shinoura, Yumiko Ozaki, Akira Shibue
-
Patent number: 7006926Abstract: A carbon oxide sensor having high sensitivity capable of reduction of influence of humidity is provided. A detection electrode and a counter electrode are provided on one side of an electrolyte, respectively. The detection electrode contains a metal oxide and a metal carbonate including plural components. The metal carbonate preferably contains a first component of alkali metal carbonate and a second component of at least one element selected from the group consisting of alkali earth metal carbonate, transition metal carbonate, zinc carbonate, cadmium carbonate, indium carbonate, lead carbonate and bismuth carbonate. Specifically, it is preferable to contain the first component including Li2CO3 and the second component including at least one element selected from the group consisting of BaCO3, CaCO3 and SrCO3.Type: GrantFiled: February 7, 2003Date of Patent: February 28, 2006Assignee: TDK CorporationInventors: Shizuko Ono, Akira Shibue, Noboru Yamazoe, Kengo Shimanoe, Kenji Obata, Norio Miura
-
Publication number: 20050263705Abstract: A carbon dioxide concentration measuring device or a method of measuring carbon dioxide concentration which can measure the carbon dioxide concentration in outside air with high accuracy is provided. A carbon dioxide sensor mounted in a heating appliance includes a generator which generates electric power through the use of combustion heat, more specifically through directly converting the heat energy of combustion heat from a flame for heating into electrical energy.Type: ApplicationFiled: May 26, 2005Publication date: December 1, 2005Applicant: TDK CORPORATIONInventors: Takashi Asatani, Akira Shibue
-
Publication number: 20040158410Abstract: A carbon oxide sensor having high sensitivity capable of reduction of influence of humidity is provided. A detection electrode and a counter electrode are provided on one side of an electrolyte, respectively. The detection electrode contains a metal oxide and a metal carbonate including plural components. The metal carbonate preferably contains a first component of alkali metal carbonate and a second component of at least one element selected from the group consisting of alkali earth metal carbonate, transition metal carbonate, zinc carbonate, cadmium carbonate, indium carbonate, lead carbonate and bismuth carbonate. Specifically, it is preferable to contain the first component including Li2CO3 and the second component including at least one element selected from the group consisting of BaCO3, CaCO3 and SrCO3.Type: ApplicationFiled: February 7, 2003Publication date: August 12, 2004Applicant: TDK CorporationInventors: Shizuko Ono, Akira Shibue, Noboru Yamazoe, Kengo Shimanoe, Kenji Obata, Norio Miura
-
Patent number: 6615659Abstract: In a humidity sensor device comprising a pair of opposed electrodes disposed on an insulating substrate to define a gap therebetween and a humidity sensitive thin film lying on the gap, the humidity sensitive thin film is a thin film comprising a polymer or copolymer obtained from a monomer of formula (1), and formation of the humidity sensitive thin film is optionally combined with treatment of the insulating substrate by physical means. A humidity sensor device for detecting and determining moisture in the surrounding atmosphere which has improved water resistance, solvent resistance, and gas resistance, and exhibits stable output performance in a wide humidity region without hysteresis is provided as well as a method for preparing the same.Type: GrantFiled: March 13, 2002Date of Patent: September 9, 2003Assignee: TDK CorporationInventors: Akira Shibue, Kenryo Namba
-
Patent number: 6568265Abstract: A humidity sensor includes a pair of interdigital electrodes disposed on an insulating substrate and defining a gap therebetween, an undercoat layer of silane compound lying on the gap-defining electrodes and substrate, and a humidity sensitive thin film lying thereon. The humidity sensitive thin film is formed of a crosslinked product of a conductive polymer having ethylenically unsaturated groups, and physically bound to the undercoat layer through an interpenetrating polymer network. The sensor is fully resistant to water so that it ensures stable operation over a long time even in a dew condensing atmosphere. The sensor is free of hysteresis and able to measure humidity over a very wide range.Type: GrantFiled: March 30, 2001Date of Patent: May 27, 2003Assignee: TDK CorporationInventors: Akira Shibue, Kenryo Namba
-
Publication number: 20030056571Abstract: In a humidity sensor device comprising a pair of opposed electrodes disposed on an insulating substrate to define a gap therebetween and a humidity sensitive thin film lying on the gap, the humidity sensitive thin film is a thin film comprising a polymer or copolymer obtained from a monomer of formula (1), and formation of the humidity sensitive thin film is optionally combined with treatment of the insulating substrate by physical means. A humidity sensor device for detecting and determining moisture in the surrounding atmosphere which has improved water resistance, solvent resistance, and gas resistance, and exhibits stable output performance in a wide humidity region without hysteresis is provided as well as a method for preparing the same.Type: ApplicationFiled: March 13, 2002Publication date: March 27, 2003Applicant: TDK CORPORATIONInventors: Akira Shibue, Kenryo Namba
-
Publication number: 20010037681Abstract: A humidity sensor includes a pair of interdigital electrodes disposed on an insulating substrate and defining a gap therebetween, an undercoat layer of silane compound lying on the gap-defining electrodes and substrate, and a humidity sensitive thin film lying thereon. The humidity sensitive thin film is formed of a crosslinked product of a conductive polymer having ethylenically unsaturated groups, and physically bound to the undercoat layer through an interpenetrating polymer network. The sensor is fully resistant to water so that it ensures stable operation over a long time even in a dew condensing atmosphere. The sensor is free of hysteresis and able to measure humidity over a very wide range.Type: ApplicationFiled: March 30, 2001Publication date: November 8, 2001Applicant: TDK CORPORATIONInventors: Akira Shibue, Kenryo Namba
-
Patent number: 6241873Abstract: The present invention provides a solid electrolyte having high stability against humidity at room temperature and a carbon dioxide sensor which not only can have sufficient sensitivity but also has excellent responsiveness at room temperature and which is excellent in humidity resistance due to the use of the above solid electrolyte, the solid electrolyte of the present invention being formed by heat-treating a polymer having a quaternary ammonium group in its main chain and having a halide ion as counter ion, and a metal halide, the carbon dioxide sensor of the present invention comprising a detection electrode and a reference electrode formed respectively in contact with a solid electrolyte, the detection electrode containing a metal carbonate which forms a dissociation equilibrium with carbon dioxide, the solid electrolyte being a product formed by heat-treating a compound having an ammonium ion portion and a metal halide or a product formed by heat-treating a polymer having a quaternary ammonium group inType: GrantFiled: July 20, 1998Date of Patent: June 5, 2001Assignee: TDK CorporationInventors: Kenryo Namba, Akira Shibue, Shizuko Kumazawa
-
Patent number: 5240863Abstract: Detecting an immunoreactant in a liquid sample, by:mixing the liquid sample with an excess of a complementary immunoreactant capable of specifically binding to the immunoreactant to allow an immunoreaction to take place, in which the complementary immunoreactant is immobilized on insoluble carrier particles and labeled with an electrochemiluminescent substance that emits an electrochemiluminescent light by electrolytic oxidation in the presence of activated oxygen,applying an electric voltage to a pair of electrodes between which the mixture obtained above is placed, in the presence of activated oxygen to allow electrochemiluminescence to take place;measuring the emission of the electrochemiluminescent light; andcorrelating the presence of the immunoreactant with the amount of measured electrochemiluminescent light, is a highly accurate method, because the rate of change of the emission of luminescent light as a function of immunoreactant concentration in the sample is high.Type: GrantFiled: February 19, 1992Date of Patent: August 31, 1993Assignee: TDK CorporationInventors: Akira Shibue, Masaru Tanaka, Shinji Kamiya