Patents by Inventor Akira Takazawa

Akira Takazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Remedies or preventives for intractable epilepsy
    Patent number: 6365621
    Abstract: A therapeutic or preventive agent for intractable epilepsy comprising as an active ingredient a compound represented by R2—CH2CONH—R1 (I), wherein R1 is a phenyl group or a pyridyl group, which may have a substituent and R2 is a 2-oxo-1-pyrrolidinyl group which may have a substituent.
    Type: Grant
    Filed: February 6, 2001
    Date of Patent: April 2, 2002
    Assignee: Pharmaceutical Co., Ltd.
    Inventors: Tatsuya Tanaka, Akira Takazawa, Mitsunobu Yoshii, Yoshiya Murashima
  • Method for manufacturing porous semiconductor light emitting device
    Patent number: 5427977
    Abstract: An Si or SiC semiconductor layer is subjected to anodic oxidation in an HF solution to form a porous semiconductor layer. Without drying, the porous semiconductor layer is then immersed in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.
    Type: Grant
    Filed: January 6, 1994
    Date of Patent: June 27, 1995
    Assignee: Fujitsu Limited
    Inventors: Masao Yamada, Motoo Nakano, George J. Collins, Tetsuro Tamura, Akira Takazawa
  • Porous semiconductor light emitting device
    Patent number: 5331180
    Abstract: An Si or SiC semiconductor layer is subjected to anodic oxidization in an HF solution to form a porous semiconductor layer. Without drying the porous semiconductor layer, it is then dipped in pure water. Ultrasonic waves applied to the pure water shorten the reaction time and help bubbles separate from the surface of the porous region. The porous semiconductor layer is used for forming a pn junction, and carriers are injected into the pn junction.
    Type: Grant
    Filed: April 28, 1993
    Date of Patent: July 19, 1994
    Assignee: Fujitsu Limited
    Inventors: Masao Yamada, Motoo Nakano, George J. Collins, Tetsuro Tamura, Akira Takazawa