Abstract: The present invention provides an access controller, and a data transfer method. The access controller controls accesses to the MRAM by reading data in advance and backing up the data when data is to be read from the MRAM.

Abstract: The present invention provides a device with low power and high performance, which can be applied to sensor nodes, a sensor node using the same, an access controller, a data transfer method, and execute a processing method in a microcontroller. The device has: an MRAM; a non-volatile CPU configured to include a nonvolatile memory; a non-volatile FPGA-ACC configured to include a nonvolatile memory and execute a part of operations on the nonvolatile CPU; and a power-gating control unit that controls power supply to each memory cell in the MRAM, the non-volatile CPU, and the non-volatile FPGA-ACC. The device is further provided with an access controller that controls accesses to the MRAM by reading data in advance and backing up the data when data is to be read from the MRAM.

Abstract: A random number generator according to one embodiment includes a write circuit, a read circuit, and a signal output circuit. The write circuit inverts magnetization of a magnetic layer of a magnetic tunnel junction element stochastically by supplying current to the magnetic layer. The read circuit reads the magnetization. The signal output circuit generates a random number on the basis of the magnetization read by the read circuit. The random number generator includes a sequence control circuit that controls the write circuit and the read circuit. The sequence control circuit regulates the write circuit to supply the current to the write circuit in a first period, and causes the read circuit to read the magnetization after the first period is finished and then a second period longer than the first period is elapsed.

Abstract: The present invention provides a device with low power and high performance, which can be applied to sensor nodes, a sensor node using the same, an access controller, a data transfer method, and execute a processing method in a microcontroller. The device has: an MRAM; a non-volatile CPU configured to include a nonvolatile memory; a non-volatile FPGA-ACC configured to include a nonvolatile memory and execute a part of operations on the nonvolatile CPU; and a power-gating control unit that controls power supply to each memory cell in the MRAM, the non-volatile CPU, and the non-volatile FPGA-ACC. The device is further provided with an access controller that controls accesses to the MRAM by reading data in advance and backing up the data when data is to be read from the MRAM.

Abstract: A random number generator according to one embodiment includes a write circuit, a read circuit, and a signal output circuit. The write circuit inverts magnetization of a magnetic layer of a magnetic tunnel junction element stochastically by supplying current to the magnetic layer. The read circuit reads the magnetization. The signal output circuit generates a random number on the basis of the magnetization read by the read circuit. The random number generator includes a sequence control circuit that controls the write circuit and the read circuit. The sequence control circuit regulates the write circuit to supply the current to the write circuit in a first period, and causes the read circuit to read the magnetization after the first period is finished and then a second period longer than the first period is elapsed.

Abstract: A circuit design support system, a circuit design support method, a circuit design support program, and a recording medium having the program recorded thereon are provided by which a design can be performed in consideration of the stochastic operation of the stochastic operation element and the influence caused by the stochastic operation of the stochastic operation element on the operation reliability of the circuit can be evaluated.

Abstract: A circuit design support system, a circuit design support method, a circuit design support program, and a recording medium having the program recorded thereon are provided by which a design can be performed in consideration of the stochastic operation of the stochastic operation element and the influence caused by the stochastic operation of the stochastic operation element on the operation reliability of the circuit can be evaluated.

Abstract: In a CCD solid-state imaging device that transfers, in an output charge transfer path, a first charge detected in a pixel of an effective pixel area and a second charge detected in a pixel of an optical black portion adjacent to the effective pixel area, and outputs the first and second charges, a charge transfer speed of the second charge is made lower than that of the first charge whenever the second charge is transferred in the output charge transfer path and is output.

Abstract: Independently of a punch-through MOS transistor Q.sub.3 used as an I/O protection element in which the drain is connected to an input node or output node and the source is connected to a GND or Vcc, an element for-setting the gate of punch-through MOS transistor Q.sub.3 to the GND potential is provided so that its operating speed may be slower than the punch-through speed of the punch-through MOS transistor Q.sub.3. In consequence, a high surge applied from I/O terminal can be punched through before the gate insulating film of the punch-through transistor Q.sub.3 undergoes a high electric field, to thereby protect the gate insulating film.

Abstract: A dynamic random access memory cell comprises a transfer transistor and a trench structure on a semiconductor substrate. The trench structure includes a vertical transistor comprising a buried impurity diffusion layer, an insulation layer and an accumulation node layer. A potential level of the buried impurity diffusion layer is fixed at a high level. The accumulation node layer accumulates charges transferred through the transfer transistor which is at ON state. The vertical transistor becomes ON state when a potential level of the accumulation node layer is high, and becomes OFF state when a potential level of the accumulation node layer is low.