Patents by Inventor Akira Unno
Akira Unno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180097207Abstract: The purpose of the present invention is to allow a gas to be stably discharged from a cracking valve even if a battery lid is deformed toward a wound group side. In a rectangular secondary battery of the present invention, a curved surface portion of a flat wound group is disposed on the side of an opening of a battery can, and the opening is sealed with a battery lid having a cracking valve and a liquid injection port. At least a protruding portion having a facing surface positioned on a curved surface portion side with respect to the cracking valve is disposed on the battery lid between the liquid injection port and the cracking valve.Type: ApplicationFiled: April 22, 2016Publication date: April 5, 2018Inventors: Akira UNNO, Kouichi KAJIWARA, Hiroaki EGAWA
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Publication number: 20170250388Abstract: An object of the invention is to obtain a rectangular secondary battery in which an outer surface of the battery has an insulating property and watertightness, and a short-circuit due to dew condensation water or the like does not occur between battery containers of adjacent batteries or between a battery container and a housing of a battery pack. A rectangular secondary battery (90) of the present invention for solving the foregoing problems is a rectangular secondary battery in which six faces of a battery container are covered with one sheet of insulating film (50). The rectangular secondary battery (90) is characterized in that, ends of the insulating film are overlapped with each other, and the insulating film continuously covers mutually adjacent faces having each of ridges between the faces of the battery container.Type: ApplicationFiled: May 21, 2015Publication date: August 31, 2017Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.Inventors: Akira UNNO, Hayato KOGUCHI, Hiroaki EGAWA
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Publication number: 20110223472Abstract: A non-aqueous electrolyte battery cell according to the present invention includes: a generating unit; a battery cell container that contains the generating unit; and a sealing lid, disposed in an open end portion of the battery cell container, and that seals the battery cell container via an insulating gasket; wherein a sealing point of the insulating gasket is established at a region that is spaced by a predetermined distance in radially outward direction of the cylindrical battery cell from an inner peripheral edge of a folded over portion that is formed at the open end portion of the cylindrical battery cell container.Type: ApplicationFiled: February 17, 2011Publication date: September 15, 2011Inventors: Kohtaro Ikeda, Hideki Shinohara, Akira Unno
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Publication number: 20110183172Abstract: A sealed battery cell includes: a coiled electrode group comprising a positive electrode, a negative electrode, and a separator wound around a winding core; a cylindrical battery cell container having an open end and a bottom surface, that contains the coiled electrode group; and a sealed cover swaged in the open end of the battery cell container, which seals the open end; wherein the winding core is squeezed between the bottom surface of the battery cell container and the sealed cover, the bottom surface of the battery cell container being elastically deformed outwards in the axial direction.Type: ApplicationFiled: January 25, 2011Publication date: July 28, 2011Applicant: Hitachi Vehicle Energy, Ltd.Inventors: Akira UNNO, Kenji Nakai, Hideki Shinohara
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Patent number: 7795612Abstract: The present invention provides an organic semiconductor device, which can be produced uniformly on a large substrate, having a high mobility and capable of greatly modulating the drain current by varying the voltage applied to a gate electrode. The present invention provides an organic semiconductor device having at least a substrate, an organic semiconductor, a gate insulating film and conductors, and having electrodes for applying bias, wherein a polymer layer, which is different from the gate insulating film, is provided in contact with the organic semiconductor, and the polymer layer is formed of a copolymer of methyl methacrylate and divinylbenzene, or the like; a process for producing the organic semiconductor device; and an organic semiconductor apparatus using the organic semiconductor device.Type: GrantFiled: December 26, 2007Date of Patent: September 14, 2010Assignee: Canon Kabushiki KaishaInventors: Akira Unno, Naotake Sato, Hajime Miyazaki, Noriyuki Doi
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Patent number: 7736433Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.Type: GrantFiled: May 21, 2008Date of Patent: June 15, 2010Assignee: Canon Kabushiki KaishaInventors: Hiroshi Aoto, Akira Unno, Tetsuro Fukui, Akio Ikesue
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Patent number: 7618131Abstract: A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezoelectric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.Type: GrantFiled: September 6, 2006Date of Patent: November 17, 2009Assignees: Canon Kabushiki KaishaInventors: Kiyotaka Wasa, Akira Unno, Tetsuro Fukui, Takanori Matsuda
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Publication number: 20080227623Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.Type: ApplicationFiled: May 21, 2008Publication date: September 18, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Hiroshi Aoto, Akira Unno, Tetsuro Fukui, Akio Ikesue
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Publication number: 20080105868Abstract: The present invention provides an organic semiconductor device, which can be produced uniformly on a large substrate, having a high mobility and capable of greatly modulating the drain current by varying the voltage applied to a gate electrode. The present invention provides an organic semiconductor device having at least a substrate, an organic semiconductor, a gate insulating film and conductors, and having electrodes for applying bias, wherein a polymer layer, which is different from the gate insulating film, is provided in contact with the organic semiconductor, and the polymer layer is formed of a copolymer of methyl methacrylate and divinylbenzene, or the like; a process for producing the organic semiconductor device; and an organic semiconductor apparatus using the organic semiconductor device.Type: ApplicationFiled: December 26, 2007Publication date: May 8, 2008Applicant: CANON KABUSHIKI KAISHAInventors: Akira Unno, Naotake Sato, Hajime Miyazaki, Noriyuki Doi
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Patent number: 7202495Abstract: An organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving. The organic semiconductor element is formed by providing a gate electrode 101 on the surface of a substrate 102, providing thereon a gate insulating layer 103, providing on the surface of the gate insulating layer 103 an island-shaped protrusion layer 104 having dispersed and island-shaped protrusions with a low surface energy, providing on the island-shaped protrusion layer 104 a source electrode 106 and a drain electrode 107 with a distance therebetween, providing thereon an organic semiconductor layer 105 in contact with the island-shaped protrusion layer 104 and both electrodes 106 and 107, and further providing a protective film 108 on the organic semiconductor layer 105.Type: GrantFiled: June 19, 2003Date of Patent: April 10, 2007Assignee: Canon Kabushiki KaishaInventor: Akira Unno
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Publication number: 20070002103Abstract: A piezoelectric element structure comprises a supporting substrate, and a piezoelectric film supported on the supporting substrate, in which the piezoelectric film contains a first layer, and a second layer having zirconium, each provided with perovskite structure, and formed to be in contact with each other or laminated through an intermediate layer, and the temperature is set at 500° C. or more at the time of thin film formation so as to provide the piezoelectric film, and a quick cooling is given from the thin film formation temperature at least to 450° C. with a cooling speed of 30° C./min or more for the formation thereof. The piezoelectric film thus formed is in a small thickness as compared with the conventional piezo-electric film, but presents a large piezoelectric constant, hence making it possible to perform efficient microprocessing thereof reliably.Type: ApplicationFiled: September 6, 2006Publication date: January 4, 2007Applicants: CANON KABUSHIKI KAISHA, KIYOTAKA WASAInventors: Kiyotaka Wasa, Akira Unno, Tetsuro Fukui, Takanori Matsuda
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Patent number: 7120978Abstract: A method of manufacturing a piezoelectric element structure having a supporting substrate and a piezoelectric film supported on the supporting substrate. A first layer, and a second layer having zirconium, each provided with a perovskite structure, are formed in that order on the supporting substrate. The two layers are formed to be in contact with each other or laminated through an intermediate layer. The temperature is set to 500° C. or more at the time of formation of the layers, and cooling is subsequently provided from the formation temperature at least to 450° C. with a cooling speed of 30° C./min or more.Type: GrantFiled: June 15, 2001Date of Patent: October 17, 2006Assignees: Canon Kabushiki Kaisha, Kiyotaka WasaInventors: Kiyotaka Wasa, Akira Unno, Tetsuro Fukui, Takanori Matsuda
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Patent number: 7069631Abstract: A piezoelectric structure includes a vibrational plate and a piezoelectric film. The vibrational plate includes a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials. Oxide layers sandwich the aforementioned layer. The piezoelectric film has a single orientation crystal or monocrystal structure.Type: GrantFiled: October 3, 2005Date of Patent: July 4, 2006Assignees: Canon Kabushiki Kaisha, Wasa, KiyotakaInventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
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Patent number: 7053526Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.Type: GrantFiled: February 11, 2002Date of Patent: May 30, 2006Assignees: Canon Kabushiki KaishaInventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
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Publication number: 20060028100Abstract: A piezoelectric structure includes a vibrational plate; a piezoelectric film; the vibrational plate including a layer of a monocrystal material, a polycrystal material, a monocrystal material doped with an element which is different from an element constituting the monocrystal material, or a polycrystal material doped with an element which is different from an element constituting the polycrystal materials, and oxide layers sandwiching the aforementioned layer, the piezoelectric film has a single orientation crystal or monocrystal structure.Type: ApplicationFiled: October 3, 2005Publication date: February 9, 2006Applicants: Canon Kabushiki Kaisha, Kiyotaka WasaInventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
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Publication number: 20050287697Abstract: The present invention provides an organic semiconductor device, which can be produced uniformly on a large substrate, having a high mobility and capable of greatly modulating the drain current by varying the voltage applied to a gate electrode. The present invention provides an organic semiconductor device having at least a substrate, an organic semiconductor, a gate insulating film and conductors, and having electrodes for applying bias, wherein a polymer layer, which is different from the gate insulating film, is provided in contact with the organic semiconductor, and the polymer layer is formed of a copolymer of methyl methacrylate and divinylbenzene, or the like; a process for producing the organic semiconductor device; and an organic semiconductor apparatus using the organic semiconductor device.Type: ApplicationFiled: October 8, 2004Publication date: December 29, 2005Applicant: CANON KABUSHIKI KAISHAInventors: Akira Unno, Naotake Sato, Hajime Miyazaki, Noriyuki Doi
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Publication number: 20050247928Abstract: An organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving. The organic semiconductor element is formed by providing a gate electrode 101 on the surface of a substrate 102, providing thereon a gate insulating layer 103, providing on the surface of the gate 102 insulating layer 103 an island-shaped protrusion layer 104 having dispersed and island-shaped protrusions with a low surface energy, providing on the island-shaped protrusion layer 104 a source electrode 106 and a drain electrode 107 with a distance therebetween, providing thereon an organic semiconductor layer 105 in contact with the island-shaped protrusion layer 104 and both electrodes 106 and 107, and further providing a protective film 108 on the organic semiconductor layer 105.Type: ApplicationFiled: June 19, 2003Publication date: November 10, 2005Applicant: CANON KABUSHIKI KAISHAInventor: Akira Unno
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Patent number: 6911107Abstract: A method for manufacturing a piezoelectric film type actuator, which is provided with a piezoelectric film and an oscillating plate structural member bonded therefor, comprises the steps of forming a piezoelectric film on an intermediate transfer member; bonding the piezoelectric film on the intermediate member and the oscillating plate structural member; and peeling off the intermediate transfer member from the piezoelectric film. Through the steps thus arranged, it becomes possible to enhance the bonding strength and durability of the piezoelectric film and the oscillating plate structural member without using a bonding agent in the manufacture of a highly reliable piezoelectric film type actuator.Type: GrantFiled: October 17, 2001Date of Patent: June 28, 2005Assignee: Canon Kabushiki KaishaInventors: Yutaka Kagawa, Akira Unno, Tetsuro Fukui
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Patent number: 6841490Abstract: A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.Type: GrantFiled: October 28, 2003Date of Patent: January 11, 2005Assignee: Canon Kabushiki KaishaInventors: Akira Unno, Takao Yonehara, Tetsuro Fukui, Takanori Matsuda, Kiyotaka Wasa
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Patent number: 6830783Abstract: An electromagnetic-wave absorber comprising a base material and an electromagnetic-wave absorption layer provided on the base material. The electromagnetic-wave absorption layer contains at least i) a polymeric material having a glass transition temperature (Tg) of from −15° C. to 110° C. and a number-average molecular weight (Mn) of from 3,000 to 1,000,000 and ii) an inorganic material. Also provided is a process for producing the absorber.Type: GrantFiled: March 27, 2003Date of Patent: December 14, 2004Assignee: Canon Kabushiki KaishaInventors: Tetsuro Fukui, Akira Unno, Yutaka Kagawa