Patents by Inventor Akira Yoshii

Akira Yoshii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5416729
    Abstract: A topography simulator using a "Generalized Solid Modeling (GSM) method" to simulate isotropic or anisotropic deposition and etch process steps on a workpiece. A solids modeling system that utilizes a boundary representation model for representing material object solids provides a basis for the topography simulator. A workpiece in the model is comprised of a collection of material solids. The present invention provides for accurately representing the interfaces of different material solids. The airspace above the top surface material is defined as an air solid. Boolean set operations between the various material solids and the air solid are performed to deform the wafer topography. The present invention further provides means for simulating an etch process step at the interface of materials with different etch rates.
    Type: Grant
    Filed: October 28, 1994
    Date of Patent: May 16, 1995
    Assignees: Nippon Telegraph and Telephone Corporation, Intel Corporation
    Inventors: Francisco A. Leon, Donald L. Scharfetter, Gregory Anderson, Satoshi Tazawa, Akira Yoshii
  • Patent number: 5379225
    Abstract: A method for efficient calculation of the movement of a vertex in a three-dimensional topography simulator. The method is particularly well suited for calculating vertex movement for cases in which an etch/deposition rate depends on the angle between the surface normal and the vertical direction. A workpiece is represented as a collection of material solids. Each of the material solids has a boundary model representation, which include vertices, edges and faces. The method of the present invention generally includes the steps of: identifying a first plane, a second plane and a third plane that approximate all the planes that are adjacent to a vertex point to be moved; determining a first observation vector; creating a set of advanced virtual planes; identifying a second observation vector; determining the furthest intersection point of one of the planes in the set of advanced planes and the second observation vector; and moving the vertex to the point identified in the prior step.
    Type: Grant
    Filed: June 24, 1992
    Date of Patent: January 3, 1995
    Assignees: Intel Corporation, Nippon Telegraph and Telephone Corporation
    Inventors: Satoshi Tazawa, Francisco A. Leon, Donald L. Sharfetter, Kazuyuki Saito, Akira Yoshii
  • Patent number: 5377118
    Abstract: A method for accurately calculating the movement of a vertex in a three-dimensional (3-D) topography simulator. The method is particularly suited for calculating vertex movement for cases in which etch/deposition rate depends on the angle between the surface normal and the vertical direction. A workpiece is represented as a collection of material solids. Each of the material solids has a boundary model representation. The method of the present invention is comprised primarily of the steps of: advancing edges and surface planes adjacent to the vertex, creating a set of 2-D solutions by clipping with pairs of adjacent surface planes; creating a set of combined 2-D solutions by clipping invalid sections of combined 2-D solutions; construct an arbitrary vertical plane that intersects the surface at the vertex point; constructing vertex trajectories for the vertex to be moved; and clipping constructed vertex trajectories at intersections of created surface and the constructed vertical plane.
    Type: Grant
    Filed: June 1, 1994
    Date of Patent: December 27, 1994
    Assignee: Intel Corporation
    Inventors: Francisco A. Leon, Donald L. Scharfetter, Satoshi Tazawa, Kazuyuki Saito, Akira Yoshii