Abstract: A semiconductor device has a first wiring extending in a first direction on a nitride semiconductor layer. A source electrode is electrically connected to the first wiring and extends in a second direction. A drain electrode extends in the second direction and includes a first and second portion extending in the second direction, spaced from each other in the first direction. An element isolation region is in the second nitride semiconductor layer between the first and second portions. A third portion extends in the second direction on the first and second portions. A gate electrode extends in the second direction on the second nitride semiconductor layer between the source electrode and the drain electrode. The portion includes holes therein aligned with each other along the second direction with the spacing between adjacent holes in the second direction increasing with increasing distance in the second direction from the first wiring.

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film. A lower end of the first field plate electrode is located on a second surface of the first electrode film, the second surface being in contact with the second electrode film, rather than a first surface of the first electrode film, the first surface being in contact with the first insulating film.

Abstract: A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.

Abstract: A data collection system includes a server device and at least one probe vehicle. The server device includes a storage unit configured to store a master map in which a necessity of data collection for each of a plurality of unit ranges included in a plurality of segments is represented by a binary value; and a server control unit configured to extract from the master map a segment corresponding to a position of the probe vehicle, and to transmit the segment to the probe vehicle as a partial map. The probe vehicle includes a data obtaining unit configured to obtain the data; and a vehicle control unit configured to identify a unit range requiring data collection based on the partial map received from the server device, and to transmit the data obtained in the unit range to the server device.

Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: According to one embodiment, a nitride semiconductor device includes a first semiconductor layer having a heterojunction, a second semiconductor layer on the first semiconductor layer and having another heterojunction, a drain electrode on the second semiconductor layer, a source electrode provided on the first semiconductor layer, a gate electrode provided on the first semiconductor layer between the drain electrode and the source electrode, and a first insulating film between the gate electrode and the drain electrode covering the first semiconductor layer and the second semiconductor layer. The second semiconductor layer being separated from the gate electrode by a portion of the insulating film. A distance from the second semiconductor layer to the gate electrode is shorter than a distance from the drain electrode to the gate electrode.

Abstract: A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.

Abstract: A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.

Abstract: A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

Abstract: The multi-agent simulation system includes a plurality of back-end servers provided for each of a plurality of service systems and a plurality of agent simulators provided for each of the plurality of agents. Each of the plurality of service systems provides a service used in the target world. The plurality of agent simulators are programmed to simulate a state of each of the plurality of agents while causing the plurality of agents to interact with each other by exchange of first messages. The plurality of back-end servers and the plurality of agent simulators are programmed to simultaneously simulate a plurality of services by exchanging second messages different from the first messages.

Abstract: The multi-agent simulation system includes a plurality of agent simulators provided for each of the plurality of agents and a center controller. The plurality of agent simulators are programmed to simulate a state of each of the plurality of agents while causing the plurality of agents to interact with each other by exchanging messages. The center controller is programmed to control a speed ratio of a flow of time in the target world to a flow of time in a real world. Each of the plurality of agent simulators calculates an index value corresponding to a remainder time rate. The remainder time rate is a rate of a remainder time to an update time interval for updating a state of a target agent to be simulated. The center controller controls the speed ratio based on the index value calculated by each of the plurality of agent simulators.

Abstract: The multi-agent simulation system includes a plurality of agent simulators provided for each of the plurality of agents and a center controller. The plurality of agent simulators are programmed to simulate a state of each of the plurality of agents while causing the plurality of agents to interact with each other by exchanging messages. The center controller is programmed to manage participation of the plurality of agent simulators in a simulation of the target world and separation of the plurality of agent simulators from the simulation of the target world. The center controller separates an agent simulator whose processing does not keep up with a flow of time in the target world from the simulation of the target world.

Abstract: A nitride semiconductor device includes a conductive substrate, a nitride semiconductor layer on the substrate, first and second pads disposed above the semiconductor layer and connected to the semiconductor layer, first and second electrodes respectively connected to the first and second pads and extending on the semiconductor layer, a first control electrode extending between the first and second electrodes, and a guard ring disposed on the semiconductor layer, connected to the substrate, and surrounding a region in which the first and second pads, the first and second electrodes and the first control electrode are disposed such that a first capacitor is formed by the guard ring and the first pad and a second capacitor is formed by the guard ring and the second pad.

Abstract: A semiconductor device includes a first terminal, a second terminal, a first chip, and a resistance part. The first chip includes a substrate electrically connected to the second terminal, a nitride semiconductor layer located on the substrate, a first drain electrode located on the nitride semiconductor layer and electrically connected to the first terminal, a first source electrode located on the nitride semiconductor layer and electrically connected to the second terminal, and a substrate capacitance between the first drain electrode and the substrate. The resistance part is connected in series in a path including the substrate capacitance between the first drain electrode and the second terminal.

Abstract: A first chip includes a first surface, a second surface, a first semiconductor layer including a nitride semiconductor layer, a first electrode pad located at the first surface, a second electrode pad located at the first surface, a first gate pad located at the first surface, and a third electrode pad located at the first surface. A second chip is located on the first surface of the first chip. The second chip includes a third surface facing the first surface of the first chip, a fourth surface, a second semiconductor layer including a channel of a second conductivity type, a fourth electrode pad located at the fourth surface, a fifth electrode pad located at the third surface and bonded to the second electrode pad of the first chip, and a second gate pad located at the third surface and bonded to the third electrode pad of the first chip.

Abstract: A multi-agent simulation system performs a simulation of a target world in which a plurality of agents interacting with each other exist. The multi-agent simulation system includes: a plurality of agent simulators configured to perform simulations of the plurality of agents, respectively; and a center controller configured to communicate with the plurality of agent simulators. The center controller performs message filtering based on a distance between the agents. Specifically, the center controller sets a delivery frequency of the delivery message to be low between the agent simulators that perform the simulations of the agents distant from each other. A space of the simulation target world is divided into a plurality of partitions, and the message filtering is performed in units of the partition.

Abstract: A semiconductor device includes a semiconductor package including an n-type channel normally-off transistor including a first electrode, a second electrode, and a first control electrode, a normally-on transistor including a third electrode electrically connected to the second electrode, a fourth electrode, and a second control electrode, a first diode including a first anode electrically connected to the second control electrode and a first cathode electrically connected to the third electrode, and a Zener diode including a second anode electrically connected to the first electrode and a second cathode electrically connected to the second electrode; a first terminal provided on the semiconductor package, the first terminal being electrically connected to the first electrode; a plurality of second terminals provided on the semiconductor package, the second terminals being electrically connected to the first electrode, and the second terminals being lined up in a first direction; a third terminal provided on t

Abstract: The multi-agent simulation system includes a plurality of agent simulators provided for each of a plurality of agents and a center controller. The plurality of agent simulators simulate a state of each of the plurality of agents while causing the plurality of agents to interact with each other by exchange of messages. The center controller relays transmission and reception of messages between the plurality of agent simulators. The plurality of agents include a plurality of types of agents including types having different time granularity. Each of the plurality of agent simulators transmits a message to the center controller at a transmission time interval corresponding to time granularity of a target agent to be simulated.

Abstract: The multi-agent simulation system includes a plurality of agent simulators provided for each of a plurality of agents and a center controller. The plurality of agent simulators simulate a state of each of the plurality of agents while causing the plurality of agents to interact with each other by exchange of messages. The center controller relays transmission and reception of messages between the plurality of agent simulators. Each of the plurality of agent simulators estimates the current state of an interaction agent from the past state of the interaction agent that interacts with a target agent, simulates the current state of the target agent by using the estimated current state of the interaction agent, and transmits a message created based on the current state of the target agent to the center controller.

Abstract: A multi-agent simulation system performs a simulation of a target world in which a plurality of agents interacting with each other exist. The multi-agent simulation system includes: a plurality of agent simulators configured to perform simulations of the plurality of agents, respectively; and a center controller configured to communicate with the plurality of agent simulators. The center controller performs message filtering based on a distance between the agents. Specifically, the center controller sets a delivery frequency of the delivery message to be low between the agent simulators that perform the simulations of the agents distant from each other. A space of the simulation target world is divided into a plurality of partitions, and the message filtering is performed in units of the partition.