Abstract: A semiconductor device having: a substrate having a first area and a second area surrounding the first area; an insulating film formed in the second area; electrodes formed above the surface of the substrate in the first area; dielectric films formed above the electrodes; and an opposing electrode formed above the dielectric films, wherein the shape of a side wall of the insulating film includes a shape reflecting the outer peripheral shape of a side wall of the electrode facing the side wall of the insulating film. The semiconductor device of high integration, low cost and high reliability can be realized.

Abstract: A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Abstract: A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Abstract: A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Abstract: A level shifter circuit includes first and second inverter circuits comprising first and second PMOS transistor and an NMOS transistor which are connected in series between a point of first potential V.sub.LC and a point of ground potential, connections interconnecting the output nodes of the respective ones of the inverter circuits to the gates of the second PMOS transistors of the respective other inverter circuits, an input signal circuit for providing to the inverter circuits respective input signals Sa, Sb which changes in a substantially complementary manner between a second potential V.sub.DD and ground potential, and a level setting circuit for forcibly setting the respective output nodes of the inverter circuits to the second potential V.sub.DD when a signal applied to said input signal circuit changes. The second potential V.sub.DD is equal to or less than the first potential V.sub.LC.

Abstract: A shift register includes a plurality of alternating shifting and latching sections connected in cascade. The phases of clocks (CLK, CLKB) for driving transmission gates (10, 14) of the shifting sections advance in phase relative to the phases of clocks (CLK, CLKB1) for driving transmission gates (12, 16) of the latching sections. The ON-resistance of the transmission gates (10, 14) of the shifting sections is sufficiently larger than that of the transmission gates (12, 16) of the latching sections, so that even when both of the clocks CLK and CLKB are at H or L levels due to delay imparted by inverters included in a clock generator, data to be latched is always given priority over data to be shifted. Thus, the shift register is free of a race condition which otherwise would be caused by a phase difference between the driving clocks.