Patents by Inventor Akiyoshi Yamazaki
Akiyoshi Yamazaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11945776Abstract: An electrolyte solution containing a compound represented by the following formula (1).Type: GrantFiled: January 9, 2019Date of Patent: April 2, 2024Assignee: DAIKIN INDUSTRIES, LTD.Inventors: Yoshiko Kuwajima, Akiyoshi Yamauchi, Kotaro Hayashi, Hisako Nakamura, Toshiharu Shimooka, Takaya Yamada, Yoshihiro Yamamoto, Shigeaki Yamazaki, Kenzou Takahashi
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Patent number: 11916195Abstract: An electrolyte solution containing a compound (1) represented by the formula (1), (wherein R101 and R102 are each individually a substituent such as a C1-C7 alkyl group, and the substituent optionally contains at least one divalent to hexavalent hetero atom in a structure or optionally has a structure obtained by replacing at least one hydrogen atom by a fluorine atom or a C0-C7 functional group) and at least one compound (11) selected from compounds such as a compound represented by formula (11-1) (wherein R111 and R112 are the same as or different from each other and are each a hydrogen atom or the like, and R113 is an alkyl group free from a fluorine atom or the like):Type: GrantFiled: March 11, 2019Date of Patent: February 27, 2024Assignee: DAIKIN INDUSTRIES, LTD.Inventors: Masakazu Kinoshita, Tomoya Hidaka, Toshiharu Shimooka, Shigeaki Yamazaki, Hisako Nakamura, Takaya Yamada, Yuuki Suzuki, Yoshiko Kuwajima, Kenzou Takahashi, Akiyoshi Yamauchi, Kotaro Hayashi
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Patent number: 11780946Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4Type: GrantFiled: January 19, 2021Date of Patent: October 10, 2023Assignee: TOKYO OHKA KOGYO CO., LTD.Inventors: Akiyoshi Yamazaki, Daisuke Kawana, Yoshitaka Komuro, Masatoshi Arai, Nobuhiro Michibayashi, Takatoshi Inari
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Patent number: 11560444Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %: In which RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 is a group derived from a compound represented by formula SHRt1, wherein Rt1 represents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.Type: GrantFiled: February 3, 2020Date of Patent: January 24, 2023Assignees: TOKYO OHKA KOGYO CO., LTD., TOKYO INSTITUTE OF TECHNOLOGYInventors: Teruaki Hayakawa, Seina Yamazaki, Akiyoshi Yamazaki, Daisuke Kawana, Yoshitaka Komuro, Takaya Maehashi, Rin Odashima
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Patent number: 11261299Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).Type: GrantFiled: February 26, 2019Date of Patent: March 1, 2022Assignees: Tokyo Ohka Kogyo Co., Ltd., Tokyo Institute of TechnologyInventors: Akiyoshi Yamazaki, Daisuke Kawana, Takehiro Seshimo, Teruaki Hayakawa, Lei Dong, Rin Odashima
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Publication number: 20210230332Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4Type: ApplicationFiled: January 19, 2021Publication date: July 29, 2021Inventors: Akiyoshi YAMAZAKI, Daisuke KAWANA, Yoshitaka KOMURO, Masatoshi ARAI, Nobuhiro MICHIBAYASHI, Takatoshi INARI
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Patent number: 10941253Abstract: A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.Type: GrantFiled: February 13, 2018Date of Patent: March 9, 2021Assignees: Tokyo Ohka Kogyo Co., Ltd., Tokyo Institute of TechnologyInventors: Teruaki Hayakawa, Seina Yamazaki, Rin Odashima, Takehiro Seshimo, Daisuke Kawana, Akiyoshi Yamazaki
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Publication number: 20200262960Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %: In which RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 is a group derived from a compound represented by formula SHRt1, wherein Rt1 represents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.Type: ApplicationFiled: February 3, 2020Publication date: August 20, 2020Inventors: Teruaki HAYAKAWA, Seina YAMAZAKI, Akiyoshi YAMAZAKI, Daisuke KAWANA, Yoshitaka KOMURO, Takaya MAEHASHI, Rin ODASHIMA
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Publication number: 20190270852Abstract: A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein RP211 represents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and RP212 represents an organic group having a polar group).Type: ApplicationFiled: February 26, 2019Publication date: September 5, 2019Inventors: Akiyoshi YAMAZAKI, Daisuke KAWANA, Takehiro SESHIMO, Teruaki HAYAKAWA, Lei DONG, Rin ODASHIMA
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Publication number: 20180244856Abstract: A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.Type: ApplicationFiled: February 13, 2018Publication date: August 30, 2018Inventors: Teruaki HAYAKAWA, Seina YAMAZAKI, Rin ODASHIMA, Takehiro SESHIMO, Daisuke KAWANA, Akiyoshi YAMAZAKI
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Patent number: 7741008Abstract: Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).Type: GrantFiled: October 17, 2006Date of Patent: June 22, 2010Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Sanae Furuya, Hideo Hada, Yusuke Nakagawa, Akiyoshi Yamazaki
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Publication number: 20090311625Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.Type: ApplicationFiled: August 25, 2009Publication date: December 17, 2009Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
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Patent number: 7629105Abstract: A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid gType: GrantFiled: September 17, 2004Date of Patent: December 8, 2009Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Akiyoshi Yamazaki, Kazuo Tani, Naoto Motoike, Satoshi Maemori, Sachiko Yoshizawa
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Publication number: 20090142696Abstract: Disclosed is a positive resist composition comprising a resin component (A) and an acid generator component (B), wherein the component (A) contains a polymer compound (A1) containing a structural unit (a0) represented by formula (a0) shown below and a structural unit (a2) derived from an acrylate ester containing a lactone-containing cyclic group: (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group, or a halogenated lower alkyl group; Y1 represents an aliphatic cyclic group; Z represents an acid dissociable, dissolution inhibiting group containing a tertiary alkyl group; a represents an integer from 1 to 3, b represents an integer from 0 to 2, and a+b=1 to 3; and c, d and e each represents, independently, an integer from 0 to 3).Type: ApplicationFiled: October 17, 2006Publication date: June 4, 2009Applicant: Tokyo Ohika Kogyo Co., Ltd.Inventors: Sanae Furuya, Hideo Hada, Yusuke Nakagawa, Akiyoshi Yamazaki
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Publication number: 20080227027Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.Type: ApplicationFiled: April 16, 2008Publication date: September 18, 2008Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
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Publication number: 20070141514Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.Type: ApplicationFiled: February 8, 2007Publication date: June 21, 2007Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazfumi Sato
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Publication number: 20060210916Abstract: A positive resist composition that includes a resin component (A), which contains acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer (A1) containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester having an alcoholic hydroxyl group, in which a portion of the hydroxyl groups of the structural units (a1) and the alcoholic hydroxyl groups of the structural units (a2) have been protected with the acid dissociable, dissolution inhibiting groups; and either the acid generator component (B) includes a diazomethane-based acid generator and an onium salt-based acid generator; or the composition further contains a compound, which contains at least one acid dissociable, dissolution inhibiting group, and generates an organic carboxylic acid under the action of acid gType: ApplicationFiled: September 17, 2004Publication date: September 21, 2006Inventors: Akiyoshi Yamazaki, Kazuo Tani, Naoto Motoike, Satoshi Maemori, Sachiko Yoshizawa
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Publication number: 20050266346Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.Type: ApplicationFiled: August 4, 2005Publication date: December 1, 2005Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
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Publication number: 20040248033Abstract: A method for forming a photoresist pattern involves the steps of: depositing a photoresist film on a substrate, the photoresist film containing an acid-generating agent capable of generating an acid upon exposure to light; overlaying an antireflective film over the photoresist film, the antireflective film containing a fluorine-based acidic compound; selectively exposing the photoresist; and developing the photoresist. The novel method is characterized in that the acid-generating agent and the fluorine-based acidic compound are selected so that the acid that the acid-generating agent generates in the photoresist film upon exposure to light has a higher acidity than the fluorine-based acidic compound in the antireflective film.Type: ApplicationFiled: June 2, 2004Publication date: December 9, 2004Inventors: Akiyoshi Yamazaki, Naoto Motoike, Daisuke Kawana, Kazufumi Sato
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Patent number: RE38254Abstract: Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a chemical compound which generates an acid when exposed to radiations, and (C) an organic carboxylic acid compound and (D) an amine, in which said resin component (A) is a mixture comprising (a) a polyhydroxystyrene having a weight-average molecular weight of from 8,000 to 25,000 and a molecular weight distribution (Mw/Mn) of 1.Type: GrantFiled: September 20, 2001Date of Patent: September 16, 2003Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Kazufumi Sato, Kazuyuki Nitta, Akiyoshi Yamazaki, Yoshika Banba, Toshimasa Nakayama