Abstract: The present description concerns an image sensor formed inside and on top of a semiconductor substrate, the sensor comprising a plurality of pixels, each comprising a photodetector formed in the substrate, the sensor comprising at least first and second bidimensional metasurfaces stacked, in this order, in front of said plurality of pixels, each metasurface being formed of a bidimensional array of pads, the first metasurface having a first optical function and the second metasurface having a second optical function different from the first optical function.

Abstract: The substrate successively comprises a base, a diamond-like carbon layer, a dielectric layer and a semi-conducting material layers which is designed to constitute microelectronic elements. A nucleation layer is preferably disposed between the base and the diamond-like carbon layer. The dielectric material is chosen such that the upper level of the valence band of the dielectric material is lower than the upper level of the valence band of the diamond-like carbon. The semi-conducting material is chosen such that the upper level of the valance band of the semi-conducting material is higher than the upper level of the valence band of the diamond-like carbon. The substrate can be achieved by successive depositions of by assembly of first and second stacks.

Abstract: There is described a process for the formation on a substrate of a refractory metal silicide layer, usable particularly for producing the interconnection layers of integrated circuits. This process consists of successively depositing on the substrate a first amorphous hydrogenated silicon layer, a second amorphous hydrogenated refractory metal layer, e.g. of tungsten, titanium, molybdenum or tantalum, and a third amorphous hydrogenated silicon layer. The thus coated substrate is then subjected to an annealing treatment at a temperature equal to or higher than 350.degree. C. in a hydrogen atmosphere. Preferably, following the deposition of the three layers, the coated substrate undergoes ionic implantation, e.g. using tungsten ions, for producing defects in the layers, which makes it possible to speed up the formation of the refractory metal silicide layer during the annealing stage.

Abstract: The material is constituted by a sub-stoichiometric amorphous oxide doped by hydrogen corresponding to the formula MO.sub.x H.sub.y, where M is a metal of group VI such as tungsten, with 2.6 < x < 2.8 and 0.3 < y < 0.6. The method of fabrication of the material involves a cathodic reactive sputtering operation which is carried out by subjecting a target having a base of a metal of group VI such as tungsten or a metal oxide to an ion bombardment in the presence of a reactive gas which consists in particular of oxygen and hydrogen.