Abstract: Tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like. The invention provides an approach for rapid, efficient rinsing of wetted surface(s), and is particularly advantageous when used to rinse the lower surface of moveable barrier structures such as a barrier plate that overlies a workpiece being treated in such a manner to define a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, the liquid is flowingly dispensed, preferably under laminar flow conditions, onto a surface that is in fluid communication with the surface to be rinsed. A smooth, uniform wetting and sheeting action results to accomplish rinsing with a significantly reduced risk of generating particle contamination.

Abstract: Apparatuses, and related methods, for processing a workpiece that include a particular barrier structure that can overlie and cover a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular movable member that can be positioned over and moved relative to a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular ceiling structure that can overlie a processing chamber. Nozzle devices, and related methods, that include a particular annular body. Nozzle devices, and related methods, that include a particular first, second, and third nozzle structure.

Abstract: A method and apparatus is provided for reducing wall erosion in a plasma containment tube (20), such as, for example, a quartz plasma tube (20) used in a microwave-induced plasma reaction process for etching semiconductor wafers. A pure benign or non-corrosive gas (Ar) is introduced into the "upstream" section (22a) of the tube (22), where the microwave energy is imparted to create a plasma. The activated benign gas flows "downstream" through a flange (28), preferably made of quartz, which is seated on o-rings (50) inside a water-cooled metal flange (48). These sealing o-rings (50) are thus cooled and removed from the ultraviolet light created by the plasma. The corrosive etchant gas (SF.sub.6) is introduced into the "downstream" section (22b) of the tube (22) beyond the flange (28), where it is activated by the benign gas (Ar). The benign gas (Ar) flows principally along the inner sidewalls of the tube (22), and the etchant gas (SF.sub.

Abstract: An annular ring (38) adapted for use in a plasma reaction chamber. The annular ring (38) includes a central opening aperture for laterally retaining a semiconductor slice (40) within the chamber. Spaced around the ring are a plurality of gas exhaust ports (58) for providing a back pressure within the chamber, for removing gases therefrom. Different rings can be provided with different central opening apertures to accommodate the processing of different sized slices. Alternative arrangements of the ring (38) provide for mask openings (68) to mask selected areas of the slice (40) and prevent plasma reactions thereat.

Abstract: A chemical vapor transport reactor gas dispersion disk (20) for counteracting vapor pressure gradients to provide a uniform deposition of material films on a semiconductor slice (37). The disk (20) has a number of apertures (22) arranged so as to increase in aperture area per unit of disk area when extending from the center of the disk (20) to its outer peripheral edge.