Patents by Inventor Alan J. Telecky
Alan J. Telecky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240118614Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.Type: ApplicationFiled: December 20, 2023Publication date: April 11, 2024Inventors: Peter De Schepper, Jason K. Stowers, Sangyoon Woo, Michael Kocsis, Alan J. Telecky
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Patent number: 11947262Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.Type: GrantFiled: March 1, 2021Date of Patent: April 2, 2024Assignee: Inpria CorporationInventors: Alan J. Telecky, Jason K. Stowers, Douglas A. Keszler, Stephen T. Meyers, Peter de Schepper, Sonia Castellanos Ortega, Michael Greer, Kirsten Louthan
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Patent number: 11886116Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.Type: GrantFiled: May 4, 2021Date of Patent: January 30, 2024Assignee: Inpria CorporationInventors: Peter de Schepper, Jason K. Stowers, Sangyoon Woo, Michael Kocsis, Alan J. Telecky
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Patent number: 11809081Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: June 6, 2022Date of Patent: November 7, 2023Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20230305390Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: ApplicationFiled: May 22, 2023Publication date: September 28, 2023Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Patent number: 11754924Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: July 6, 2022Date of Patent: September 12, 2023Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 11740559Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.Type: GrantFiled: October 11, 2021Date of Patent: August 29, 2023Assignee: Inpria CorporationInventors: Mollie Waller, Brian J. Cardineau, Kai Jiang, Alan J. Telecky, Stephen T. Meyers, Benjamin L. Clark
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Patent number: 11693312Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: GrantFiled: August 25, 2022Date of Patent: July 4, 2023Assignee: Inpria CorporationInventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Publication number: 20230143592Abstract: An organotin precursor solution is described comprising an organic solvent, an optional additive, and an organotin composition represented by one or more organotin compounds represented by the formula RSnL3, wherein each R is independently a hydrocarbyl ligand having from 1 to 31 carbon atoms and each L is independently a hydrolysable ligand, wherein the total concentration of Sn is from about 0.001 M to about 0.5 M. The solvent can comprises a linear alcohol with from 1 to 6 carbon atoms, and the organotin precursor solution can have an initial water content from about 100 ppm to about 10,000 ppm, in which the organotin precursor solution has a reduced rate of water dissipation relative to an equivalent organotin precursor solution formed with 4-methyl-2-pentanol. The organotin precursor solutions can be prepared through the selection of an appropriate stabilizing compound, which can be a linear, short chain alcohol and an appropriate additive.Type: ApplicationFiled: November 7, 2022Publication date: May 11, 2023Inventors: Kai Jiang, Alan J. Telecky, Stephen T. Meyers
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Patent number: 11599022Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: GrantFiled: June 14, 2022Date of Patent: March 7, 2023Assignee: Inpria CorporationInventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Publication number: 20230004090Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: September 7, 2022Publication date: January 5, 2023Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220413382Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: ApplicationFiled: August 25, 2022Publication date: December 29, 2022Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Patent number: 11537048Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: GrantFiled: August 6, 2020Date of Patent: December 27, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Patent number: 11500284Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: GrantFiled: October 30, 2020Date of Patent: November 15, 2022Assignee: Inpria CorporationInventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Publication number: 20220334487Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: July 6, 2022Publication date: October 20, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220334488Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: July 6, 2022Publication date: October 20, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220308447Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: ApplicationFiled: June 14, 2022Publication date: September 29, 2022Inventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville
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Publication number: 20220299878Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Brian J. Cardineau, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Alan J. Telecky
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Publication number: 20220291582Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.Type: ApplicationFiled: March 28, 2022Publication date: September 15, 2022Inventors: Stephen T. Meyers, Jeremy T. Anderson, Joseph B. Edson, Kai Jiang, Douglas A. Keszler, Michael K. Kocsis, Alan J. Telecky, Brian J. Cardineau
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Patent number: 11392031Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.Type: GrantFiled: May 28, 2020Date of Patent: July 19, 2022Assignee: Inpria CorporationInventors: Jason K. Stowers, Alan J. Telecky, Douglas A. Keszler, Andrew Grenville