Abstract: The invention provides a monolithic integrated mesh device for atomization or pumping of a fluid or liquid comprising a plurality of apertures and a piezoelectric material. The piezoelectric material is bonded to the mesh device at an atomic scale. In one embodiment the monolithic micro-fabricated device of the invention includes piezoelectric material that eliminates the need for expensive assembly process and improves reliability. This also has advantage of requiring lower operating voltage and less complicated circuitry.

Abstract: The invention provides a monolithic integrated mesh device for atomization or pumping of a fluid or liquid comprising a plurality of apertures and a piezoelectric material. The piezoelectric material is bonded to the mesh device at an atomic scale. In one embodiment the monolithic micro-fabricated device of the invention includes piezoelectric material that eliminates the need for expensive assembly process and improves reliability. This also has advantage of requiring lower operating voltage and less complicated circuitry.

Abstract: An apparatus for photon counting is disclosed that comprises a sensor element (5) comprising a photon detector (8) and a capacitance (2) for applying a potential difference across the detector (8). The apparatus also comprises switching circuitry (6) for connecting the sensor element (5) operatively to a voltage source (4) during a refresh period to charge the capacitance (2) to achieve a predetermined potential difference across the detector (8) above a threshold value, and for substantially isolating the sensor element (5) from the voltage source (4) during a sensing period in which the charged capacitance (2) maintains a potential difference across the detector (8) above the threshold value and in which the detection of a photon by the detector (8) causes at least some of the charge on the capacitance (2) to discharge through the detector (8). The apparatus also comprises control circuitry (12) for controlling the switching circuitry (6) to initiate refresh and sensing periods in alternating sequence.

Abstract: An apparatus for photon counting is disclosed that comprises a sensor element (5) comprising a photon detector (8) and a capacitance (2) for applying a potential difference across the detector (8). The apparatus also comprises switching circuitry (6) for connecting the sensor element (5) operatively to a voltage source (4) during a refresh period to charge the capacitance (2) to achieve a predetermined potential difference across the detector (8) above a threshold value, and for substantially isolating the sensor element (5) from the voltage source (4) during a sensing period in which the charged capacitance (2) maintains a potential difference across the detector (8) above the threshold value and in which the detection of a photon by the detector (8) causes at least some of the charge on the capacitance (2) to discharge through the detector (8). The apparatus also comprises control circuitry (12) for controlling the switching circuitry (6) to initiate refresh and sensing periods in alternating sequence.

Abstract: An optical detector (1) acts as a modular detection unit. It may for example be mounted on a separate micro-fluidic device (2) for detection of species within a channel (3) of the device (2). The detector (1) has mounting lugs (4) for mounting on the micro-fluidic device (2) for exact registry with the channel (3). A substrate (15) is folded over at a flexible part (25) through 180° and, at the top, supports a vertical emitting laser device (16). The lower branch of the substrate (15) supports an integrated circuit photo-diode array sensor (17) having chip bumps (18). The substrate (15) also supports emitter drive circuitry (26) and detector circuitry (27). The sensor (17) is a silicon integrated circuit, having an array of integrated photo-diodes (17(a)) in a silicon wafer (17(b)). There is a vertical through-hole (17(c)) in the wafer, to act as a guide for incident radiation emitted by the emitter (16) (arrows IR).

Abstract: The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask (6) over an active diode region (5) in a wafer (1), and damaging the region the surrounding the active diode region by breaking bonds in the semiconductor lattice to provide gettering sites in this surrounding region.

Abstract: The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask (6) over an active diode region (5) in a wafer (1), and damaging the region the surrounding the active diode region by breaking bonds in the semiconductor lattice to provide gettering sites in this surrounding region.

Abstract: An electrical switch performs multi-polar switching. A HDFET structure has a source (2) at one terminal and two drains (3(a) and 3(b)) providing isolated terminals at the opposite end. The drains (3(a) and 3(b)) are separated by an insulator (8). N+ gates (6, 7) are at each side of a channel (5) linking the source (2) with the drains (3(a), 3(b)). Bias of the gates (6, 7) is controlled to control depletion regions (21, 22) to switch on or off current flow (A, B) between the source (2) and the drains (3(a), 3(b)).

Abstract: A negative resistance device (NRD) has a MOSFET-like structure, and is biased by shorting the gate and source together at a fixed applied potential and applying a different fixed potential to the drain, and sweeping the bulk potential towards the drain potential, causing the bulk current to exhibit a negative resistance characteristic. The NRD may be used in a memory circuit (10) in which a resistor (R) is connected between the bulk (2) and a fixed potential. Two States of the circuit at which the current through the resistor matches that through the bulk of the NRD are stable, providing for bistable memory operation.

Abstract: A negative resistance device (NRD) has a MOSFET-like structure, and is biased by: