Abstract: An ion implantation apparatus is provided for workpiece handling. The apparatus includes a plurality of scan systems for scanning workpieces in an ion implanting beam, a plurality of exchangers for moving the workpieces to and from the scan systems, and a system controller for positioning one of the workpieces for scanning in the ion implanting beam by one of the scan systems, sensing completion of the ion beam scanning for the one workpiece and simultaneously positioning another of the workpieces for scanning in the ion implanting beam by another of the scan systems so that the workpieces are continuously presented to the ion implanting beam. The apparatus provides continuous implantation relative to the beam, thus enabling wafer exchange to occur in parallel with the implantation process. As a result, significant system productivity improvement and wafer throughput will be realized.

Abstract: Methods and systems are provided for increasing the efficiency of the ion beam during scanning workpieces in ion implanting such that multiple wafers are arranged on a platen or support so that a greater portion of the beam scans the workpiece surface. Specifically, an apparatus is provided for ion implanting a plurality of workpieces. The apparatus includes an ion source for generating an ion beam having a scan width and a scan distance which defines a predetermined scan area, a holder for receiving the workpieces that are arranged so as to maximize the surface area of the workpieces present within the predetermined scan area. Thereby, a scanner may scan the ion beam over the predetermined scan area so that the utilization efficiency of said ion beam on the workpieces is increased.

Abstract: An ion implanter is provided having an ion beam generator for generating an ion beam, a platen for holding a workpiece, such as a semiconductor wafer, and a tilt mechanism for tilting the platen and the wafer with respect to the ion beam. A scan controller mechanically moves the wafer and the platen relative to the ion beam so that the motion of the wafer and the platen is tangential, i.e. parallel, to the wafer surface. As a result, the ion beam intersects the wafer surface at a fixed position along the beamline as the wafer is scanned. The size and shape of the ion beam are thereby constant over all areas of the wafer surface during the implant for increasing implant uniformity.