Patents by Inventor Alan Ritchie
Alan Ritchie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9812303Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first base plate; a second base plate movable with respect to the first base plate between a first position and a second position; an outer magnetic pole in the shape of a loop and comprising an outer magnetic pole section coupled to the first base plate and an outer magnetic pole section coupled to the second base plate; and an inner magnetic pole disposed within the outer magnetic pole, wherein the outer and inner magnetic poles define a closed loop magnetic field, and wherein the closed loop magnetic field is maintained when the second base plate is disposed in both the first position and a second position.Type: GrantFiled: February 18, 2014Date of Patent: November 7, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Alan Ritchie, Ryan Hanson, Xianwei Zhao
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Patent number: 9695502Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower.Type: GrantFiled: March 30, 2012Date of Patent: July 4, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Alan Ritchie, Donny Young
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Publication number: 20170183768Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.Type: ApplicationFiled: March 13, 2017Publication date: June 29, 2017Inventors: ZHENBIN GE, ALAN A. RITCHIE
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Patent number: 9611539Abstract: Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.Type: GrantFiled: January 25, 2013Date of Patent: April 4, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Zhenbin Ge, Alan Ritchie, Adolph Miller Allen
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Patent number: 9593417Abstract: A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced.Type: GrantFiled: September 17, 2013Date of Patent: March 14, 2017Assignee: Applied Materials, Inc.Inventors: Wei Ti Lee, Ted Guo, Steve H. Chiao, Alan A. Ritchie
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Patent number: 9593410Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.Type: GrantFiled: March 5, 2013Date of Patent: March 14, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Zhenbin Ge, Alan A. Ritchie
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Patent number: 9580796Abstract: One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder.Type: GrantFiled: June 30, 2011Date of Patent: February 28, 2017Assignee: Applied Materials, Inc.Inventors: Alan Ritchie, Michael S. Cox
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Patent number: 9404174Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.Type: GrantFiled: March 13, 2013Date of Patent: August 2, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Donny Young, Alan A. Ritchie
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Patent number: 9340866Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.Type: GrantFiled: March 30, 2012Date of Patent: May 17, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Alan Ritchie, Donny Young, Wei W. Wang, Ananthkrishna Jupudi, Thanh X. Nguyen, Kirankumar Savandaiah
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Patent number: 9315891Abstract: In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position.Type: GrantFiled: March 15, 2013Date of Patent: April 19, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Joung Joo Lee, William Johanson, Keith A. Miller, Alan A. Ritchie
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Patent number: 9303311Abstract: Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.Type: GrantFiled: March 30, 2012Date of Patent: April 5, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Donny Young, Alan Ritchie, Uday Pai, Muhammad Rasheed, Keith A. Miller
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Patent number: 9255322Abstract: A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter.Type: GrantFiled: March 30, 2012Date of Patent: February 9, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Donny Young, Alan Ritchie, Muhammad Rasheed, Keith A. Miller
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Patent number: 9218961Abstract: Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.Type: GrantFiled: September 19, 2012Date of Patent: December 22, 2015Assignee: Applied Materials, Inc.Inventors: Zhenbin Ge, Alan Ritchie, Adolph Miller Allen
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Publication number: 20150349374Abstract: Solid-state battery structures and methods of manufacturing solid-state batteries, such as thin-film batteries, are disclosed. More particularly, embodiments relate to solid-state batteries that incorporate magnetic material in one or more layers. Other embodiments are also described and claimed.Type: ApplicationFiled: May 26, 2015Publication date: December 3, 2015Inventors: Tetsuya Ishikawa, Penchala N. Kankanala, Alan Ritchie
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Patent number: 9177763Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.Type: GrantFiled: March 15, 2013Date of Patent: November 3, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Muhammad Rasheed, Alan A. Ritchie, Isaac Porras, Keith A. Miller
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Publication number: 20150221486Abstract: Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas.Type: ApplicationFiled: January 19, 2015Publication date: August 6, 2015Inventors: ALAN A. RITCHIE, ZHENBIN GE, JENN YUE WANG, SALLY LOU
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Patent number: 9087679Abstract: Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.Type: GrantFiled: February 3, 2012Date of Patent: July 21, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Muhammad M. Rasheed, Rongjun Wang, Thanh X. Nguyen, Alan A. Ritchie
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Patent number: 9028659Abstract: Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity while extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber.Type: GrantFiled: August 7, 2013Date of Patent: May 12, 2015Assignee: Applied Materials, Inc.Inventors: Alan Ritchie, Zhenbin Ge, Tza-Jing Gung, Vivek Gupta
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Patent number: 8865012Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method for processing a substrate may include placing a substrate atop a substrate support disposed beneath a processing volume of a process chamber having a grounded shield surrounding the process volume and a conductive cover ring selectably supportable by the grounded shield; positioning the substrate support in a first position such that the substrate support is not in contact with the conductive cover ring and such that a conductive member electrically coupled to the cover ring contacts the grounded shield to electrically couple the cover ring to the grounded shield; and performing a plasma enhanced etch process on the substrate.Type: GrantFiled: March 14, 2013Date of Patent: October 21, 2014Assignee: Applied Materials, Inc.Inventors: Zhenbin Ge, Alan A. Ritchie
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Patent number: 8846451Abstract: Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.Type: GrantFiled: July 8, 2011Date of Patent: September 30, 2014Assignee: Applied Materials, Inc.Inventors: Alan Ritchie, Karl Brown, John Pipitone