Patents by Inventor Alan S. Chen
Alan S. Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10886893Abstract: Reduced-size guided-surface acoustic wave (SAW) resonators are disclosed. Guided-SAW resonators can achieve high acoustic coupling and acoustic quality Q, but may have a larger surface area compared with a traditional temperature compensated (TC)-SAW resonator. In an exemplary aspect, a guided-SAW device is fabricated with a metal-insulator-metal (MIM) capacitor to produce a guided-SAW which has the same high Q with a surface area which is the same or less than traditional TC-SAW resonators.Type: GrantFiled: February 21, 2019Date of Patent: January 5, 2021Assignee: Qorvo US, Inc.Inventors: Kevin J. Gamble, Alan S. Chen
-
Publication number: 20200274519Abstract: Reduced-size guided-surface acoustic wave (SAW) resonators are disclosed. Guided-SAW resonators can achieve high acoustic coupling and acoustic quality Q, but may have a larger surface area compared with a traditional temperature compensated (TC)-SAW resonator. In an exemplary aspect, a guided-SAW device is fabricated with a metal-insulator-metal (MIM) capacitor to produce a guided-SAW which has the same high Q with a surface area which is the same or less than traditional TC-SAW resonators.Type: ApplicationFiled: February 21, 2019Publication date: August 27, 2020Inventors: Kevin J. Gamble, Alan S. Chen
-
Patent number: 10476481Abstract: Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is between the piezoelectric layer and the dielectric layer. The capacitor includes a first plate on the surface of the piezoelectric layer such that the first plate is between the piezoelectric layer and the dielectric layer and a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer.Type: GrantFiled: August 7, 2017Date of Patent: November 12, 2019Assignee: Qorvo US, Inc.Inventors: Alan S. Chen, Kurt G. Steiner, Benjamin P. Abbott, Taeho Kook, Scott Shive, Jean Briot
-
Patent number: 10469050Abstract: An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.Type: GrantFiled: August 17, 2017Date of Patent: November 5, 2019Assignee: Qorvo US, Inc.Inventors: Kevin J. Gamble, Benjamin P Abbott, Alan S. Chen, Kurt G. Steiner
-
Patent number: 9973169Abstract: Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (K?·m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.Type: GrantFiled: November 30, 2015Date of Patent: May 15, 2018Assignee: Qorvo US, Inc.Inventors: Kurt G. Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen
-
Publication number: 20180054179Abstract: An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. Further, by varying a width of the slow wave propagation overlay based on the electrode period, the desirable wave mode may be further maintained.Type: ApplicationFiled: August 17, 2017Publication date: February 22, 2018Inventors: Kevin J. Gamble, Benjamin P. Abbott, Alan S. Chen, Kurt G. Steiner
-
Publication number: 20180041193Abstract: Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is between the piezoelectric layer and the dielectric layer. The capacitor includes a first plate on the surface of the piezoelectric layer such that the first plate is between the piezoelectric layer and the dielectric layer and a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer.Type: ApplicationFiled: August 7, 2017Publication date: February 8, 2018Inventors: Alan S. Chen, Kurt G. Steiner, Benjamin P. Abbott, Taeho Kook, Scott Shive, Jean Briot
-
Publication number: 20170099042Abstract: Embodiments of a Surface Acoustic Wave (SAW) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the SAW filter comprises a piezoelectric substrate and an Interdigitated Transducer (IDT) on a surface of the piezoelectric substrate. The IDT includes multiple fingers, each comprising a metal stack. The SAW filter further includes a cap layer on a surface of the IDT opposite the piezoelectric substrate and on areas of the surface of the piezoelectric substrate exposed by the IDT. The cap layer has a thickness in a range of and including 10 to 500 Angstroms and a high electrical resistivity (and thus a low electrical conductivity). For instance, in some embodiments, the electrical resistivity of the cap layer is greater than 10 kilo-ohm meters (K?·m). The SAW filter further includes an oxide overcoat layer on a surface of the cap layer opposite the IDT and the piezoelectric substrate.Type: ApplicationFiled: November 30, 2015Publication date: April 6, 2017Inventors: Kurt G. Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen
-
Patent number: 9331667Abstract: Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.Type: GrantFiled: July 21, 2014Date of Patent: May 3, 2016Assignee: TriQuint Semiconductor, Inc.Inventors: Kurt Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen
-
Publication number: 20160020747Abstract: Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.Type: ApplicationFiled: July 21, 2014Publication date: January 21, 2016Inventors: Kurt Steiner, Curtiss Hella, Benjamin P. Abbott, Daniel Chesire, Chad Thompson, Alan S. Chen
-
Patent number: 9209380Abstract: Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer.Type: GrantFiled: March 8, 2013Date of Patent: December 8, 2015Assignee: TriQuint Semiconductor, Inc.Inventors: Suzanne Combe, Kurt Steiner, Alan S. Chen, Charles E. Carpenter, Ian Yee, Jean Briot, George Grama
-
Patent number: 8294331Abstract: An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.Type: GrantFiled: March 7, 2011Date of Patent: October 23, 2012Assignee: TriQuint Semiconductor, Inc.Inventors: Benjamin P. Abbott, Robert Aigner, Alan S. Chen, Julien Gratier, Taeho Kook, Marc Solal, Kurt G. Steiner
-
Publication number: 20120161577Abstract: An acoustic wave device operable as a piston mode wave guide includes electrodes forming an interdigital transducer on a surface of the piezoelectric substrate, wherein each of the plurality of electrodes is defined as having a transversely extending center region and transversely opposing edge regions for guiding an acoustic wave longitudinally through the transducer. A Silicon Oxide overcoat covers the transducer and a Silicon Nitride layer covers the Silicon Oxide overcoat within only the center and edge regions. The thickness of the Silicon Nitride layer is sufficient for providing a frequency modification to the acoustic wave within the center region and is optimized with a positioning of a Titanium strip within each of the opposing edge regions. The Titanium strip reduces the acoustic wave velocity within the edge regions with the velocity in the edge regions being less than the wave velocity within the transducer center region.Type: ApplicationFiled: March 7, 2011Publication date: June 28, 2012Inventors: Benjamin P. Abbott, Robert Aigner, Alan S. Chen, Kevin Gamble, Julien Gratier, Taeho Kook, Marc Solal, Kurt G. Steiner
-
Patent number: 8106480Abstract: The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector that ranges from about 0.9 microns to about 2.0 microns.Type: GrantFiled: January 5, 2010Date of Patent: January 31, 2012Assignee: Agere Systems Inc.Inventors: Alan S. Chen, Mark Dyson, Daniel C. Kerr, Nace M. Rossi
-
Patent number: 8044553Abstract: A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.Type: GrantFiled: February 22, 2010Date of Patent: October 25, 2011Assignee: Triquint Semiconductor, Inc.Inventors: Alan S. Chen, Taeho Kook, Kurt G. Steiner, Stephen A. Neston, Timothy J. Daniel
-
Publication number: 20110204747Abstract: A SAW device having metal electrodes on a surface of the piezoelectric substrate includes a dielectric layer deposited on the surface. Depositing the layer results in seams extending upward from the electrodes extending above the surface of the substrate. An additional seam results from one seam extending from one electrode joining a second seam extending from an adjacent electrode within the dielectric layer and is generally formed above the height of the electrodes. The additional seam is removed through planarization or the like. The dielectric layer may be further planarized for providing a thickness of the dielectric layer above the electrodes as desired.Type: ApplicationFiled: February 22, 2010Publication date: August 25, 2011Applicant: TRIQUINT SEMICONDUCTOR, INC.Inventors: Alan S. Chen, Taeho Kook, Kurt G. Steiner, Stephen A. Neston, Timothy J. Daniel
-
Patent number: 7923340Abstract: The invention, in one aspect, provides a method for fabricating a semiconductor device. In one aspect, the method provides for a dual implantation of a tub of a bipolar transistor. The tub in bipolar region is implanted by implanting the tub through separate implant masks that are also used to implant tubs associated with MOS fabricate different voltage devices in a non-bipolar region during the fabrication of MOS transistors.Type: GrantFiled: February 14, 2007Date of Patent: April 12, 2011Assignee: Agere Systems Inc.Inventors: Alan S. Chen, Mark Dyson, Nace M. Rossi, Ranbir Singh, Xiaojun Yuan
-
Patent number: 7898038Abstract: The invention, in one aspect, provides a method for fabricating a semiconductor device, which includes conducting an etch through an opening in an emitter layer to form a cavity from an underlying oxide layer that exposes a doped tub. A first silicon/germanium (SiGe) layer, which has a Ge concentration therein, is formed within the cavity and over the doped tub by adjusting a process parameter to induce a strain in the first SiGe layer. A second SiGe layer is formed over the first SiGe layer, and a capping layer is formed over the second SiGe layer.Type: GrantFiled: June 2, 2009Date of Patent: March 1, 2011Assignee: Agere Systems, Inc.Inventors: Alan S. Chen, Mark Dyson, Nace M. Rossi, Ranbir Singh
-
Publication number: 20100102418Abstract: The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector that ranges from about 0.9 microns to about 2.0 microns.Type: ApplicationFiled: January 5, 2010Publication date: April 29, 2010Applicant: Agere Systems Inc.Inventors: Alan S. Chen, Mark Dyson, Daniel C. Kerr, Nace M. Rossi
-
Publication number: 20100065920Abstract: The invention, in one aspect, provides a method for fabricating a semiconductor device. In one aspect, the method provides for a dual implantation of a tub of a bipolar transistor. The tub in bipolar region is implanted by implanting the tub through separate implant masks that are also used to implant tubs associated with MOS fabricate different voltage devices in a non-bipolar region during the fabrication of MOS transistors.Type: ApplicationFiled: February 14, 2007Publication date: March 18, 2010Inventors: Alan S. Chen, Mark Dyson, Nace M. Rossi, Ranbir Singh, Xiaojun Yuan