Abstract: Substrate masking apparatus includes a platen assembly to support a substrate for processing, a mask having an aperture, a retaining mechanism to retain the mask in a masking position, and a positioning mechanism to change the relative positions of the mask and the substrate so that different areas of the substrate are exposed through the aperture in the mask. The apparatus may further include a mask loading mechanism to transfer the mask to and between the masking position and a non-masking position. The processing may include ion implantation of the substrate with different implant parameter values in different areas. In other embodiments, an area of the substrate to be processed is selectable by a mask, a shutter or a beam modifier in front of the substrate.

Abstract: Methods and systems are provided for increasing the efficiency of the ion beam during scanning workpieces in ion implanting such that multiple wafers are arranged on a platen or support so that a greater portion of the beam scans the workpiece surface. Specifically, an apparatus is provided for ion implanting a plurality of workpieces. The apparatus includes an ion source for generating an ion beam having a scan width and a scan distance which defines a predetermined scan area, a holder for receiving the workpieces that are arranged so as to maximize the surface area of the workpieces present within the predetermined scan area. Thereby, a scanner may scan the ion beam over the predetermined scan area so that the utilization efficiency of said ion beam on the workpieces is increased.

Abstract: An ion implantation apparatus is provided for workpiece handling. The apparatus includes a plurality of scan systems for scanning workpieces in an ion implanting beam, a plurality of exchangers for moving the workpieces to and from the scan systems, and a system controller for positioning one of the workpieces for scanning in the ion implanting beam by one of the scan systems, sensing completion of the ion beam scanning for the one workpiece and simultaneously positioning another of the workpieces for scanning in the ion implanting beam by another of the scan systems so that the workpieces are continuously presented to the ion implanting beam. The apparatus provides continuous implantation relative to the beam, thus enabling wafer exchange to occur in parallel with the implantation process. As a result, significant system productivity improvement and wafer throughput will be realized.