Abstract: A method includes affixing a supply apparatus to inlets for one or more channels of a chamber component. The channels provide one or more gas flow paths between a first side of the chamber component that comprises the inlets and a second side of the chamber component comprising outlets of the one or more channels. The method further includes affixing an exhaust apparatus to the outlets of the one or more channels. The method further includes performing a plurality of atomic layer deposition cycles to deposit a corrosion resistant coating on interior surfaces of the one or more channels of the chamber component.

Abstract: Assemblies, system, methods, and devices for monitoring characteristics of a substrate disposed in a recess within a processing chamber. An assembly includes an enclosure structure forming an interior volume configured to support a substrate disposed within the interior volume. The substrate may be selectively removed from the enclosure structure. The enclosure structure may include an upper interior surface and a lower interior surface located below the upper interior surface. The interior volume is configured to direct a first mass transport of a reactive species to a first surface of the substrate, the reactive species corresponding to a substrate process. A first portion of the lower interior surface is configured to support the substrate. A second portion of the lower interior surface forms a channel configured to provide a second mass transport of the reactive species to a second surface of the substrate opposite the first surface.

Abstract: A method including receiving, by a processing device, first data characterizing a film on a surface of a substrate processed within a recess of a sensor assembly positioned in a first region of a processing chamber. The processed surface of the film corresponds to a substrate processing procedure. The method further includes determining, based on the first data, a rate of advancement of a first processed surface boundary of the film across the surface of the substrate. The method further includes determining, using the rate of advancement, a dosage strength of a reactive species delivered to the first region of the processing. The method may further include preparing an indication of the dosage strength for presentation on a graphical user interface (GUI). The method may further include altering an operation of the processing chamber based on the dosage strength.

Abstract: A method including receiving, by a processing device, image data characterizing light reflected from of a film disposed on a processed surface of a substrate. The image data corresponds to one or more locations across a surface of the film and indicates a camera perspective angle associated with capturing the image data. The method further includes determining, by the processing device using the image data, reflection data indicating reflection effect of the light reflected from the film. The method further includes processing the reflection data using one or more machine-learning model (MLMs). The method further includes determining one or more process result metrics of the film corresponding to the one or more locations. The method may further includes preparing the one or more process result metrics for display on a graphical user interface (GUI). The method may further include preparing the one or more process result metrics for processing in a script-based environment.

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

Abstract: Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

Abstract: Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.