Patents by Inventor Albert Bobenrieth

Albert Bobenrieth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4069493
    Abstract: An integrated circuit comprises a high-resistivity substrate 1 which virtually insulates the various integrated components of the circuit from one another and reduces the parasitic capacitances. This components are constituted by ion implantation through high-precision masks, without exceeding 800.degree. C in temperature. This is the case with the source 3, the gate 9 and the drain 4, of the field-effect transistor (shown in FIG. 1).
    Type: Grant
    Filed: April 26, 1976
    Date of Patent: January 17, 1978
    Assignee: Thomson-CSF
    Inventor: Albert Bobenrieth
  • Patent number: 3969632
    Abstract: A logic circuit uses a junction-type field-effect transistor.The element comprises a transistor whose gate, by means of Zener diodes or forward-biased diodes is placed at a fixed potential so that it is blocked when one of its inputs carries the 0 level, and at another fixed potential, such that it is conductive, when all the inputs carry the 1 level.
    Type: Grant
    Filed: October 1, 1974
    Date of Patent: July 13, 1976
    Assignee: Thomson-CSF
    Inventor: Albert Bobenrieth