Abstract: A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.

Abstract: A method and apparatus for producing a distributed plasma at atmospheric pressure. A distributed plasma can be produced at atmospheric pressure by using an inexpensive high frequency power source in communication with a waveguide having a plurality particularly configured couplers disposed therein. The plurality of particularly arranged couplers can be configured in the waveguide to enhance the electromagnetic field strength therein. The plurality of couplers have internal portions disposed inside the waveguide and spaced apart by a distance of ½ wavelength of the high frequency power source and external portions disposed outside the waveguide and spaced apart by a predetermined distance which is calculated to cause the electromagnetic fields in the external portions of adjacent couplers to couple and thereby further enhance the strength of the electromagnetic field in the waveguide. Plasma can be formed in plasma areas defined by gaps between electrodes disposed on the external portions.

Abstract: A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteristics of the plasma generated.

Abstract: A vacuum chamber with a cover with a first section, a second section, and a pocket between the first section and second section is provided. The vacuum chamber has a main cavity to which the first section is adjacent. The vacuum chamber may be used for plasma processing, which may require a critical element to be supported by the first section. The pocket is in fluid communication with the main cavity. When a vacuum is created in the main cavity, the pressure is also reduced in the pocket. As a result, the second section of the cover is deformed by the vacuum in the pocket. However, the vacuum in the pocket helps to prevent the first section from deforming, providing better support for the critical element.

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Abstract: A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

Abstract: A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.