Abstract: The present invention relates to integrated circuit comprising a plurality of bitlines (b1) and a plurality of word-lines (w1) as well as a plurality of memory-cells (MC) coupled between a separate bit-line/word-line pair of the plurality of bit-lines (b1) and wordlines (w1) for storing data in the memory cell. Each memory cell (MC) comprises a selecting unit (T) and a programmable resistance (R). The value of the phase-change resistance (R) is greater than the value of a first phase-change resistance (Ropt) defined by a supply voltage (Vdd) divided by a maximum drive current (Im,) through said first phase-change resistor (Ropt).

Abstract: A detection system (1) having an optical sensor (3), a radar device (2) and a signal processor (4) communicatively connected with the optical sensor and the radar device. The signal processor comprises: a first detector (41, 410-413) for detecting a first object on the basis of a first signal coming from the optical sensor and determining at least one first property of the first object; a second detector (42, 420-421) for detecting a second object on the basis of a second signal coming from the radar device and determining at least one second property of that second object, and a signaling unit (43) for producing a signal if the at least one first property and the at least one second property satisfy a predetermined condition.

Abstract: A semiconductor arrangement including: a substrate having a substrate layer (13) with an upper and lower surface, the substrate layer (13) being of a first conductivity type; a first buried layer (12) in the substrate, extending along said lower surface below a first portion of said upper surface of said substrate layer (13), and a second buried layer (12) in the substrate, extending along said lower surface below a second portion of said upper surface of said substrate layer (13); a first diffusion (26) in said first portion of said substrate layer (13), being of a second conductivity type opposite to said first conductivity type and having a first distance to said first buried layer (12) for defining a first breakdown voltage between said first diffusion (26) and said first buried layer (12); a second diffusion (45) in said second portion of said substrate layer (13), being of said second conductivity type and having a second distance to said second buried layer (12) for defining a second breakdown volta

Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material. The first semiconductor material has a higher intrinsic carrier concentration than the second semiconductor material. The layer (7) of said second semiconductor material is positioned outside the depletion region (5). The second semiconductor material has such a doping concentration that Auger recombination occurs. The invention also relates to a semiconductor device comprising such a bipolar transistor.

Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material. The first semiconductor material has a higher intrinsic carrier concentration than the second semiconductor material. The layer (7) of said second semiconductor material is positioned outside the depletion region (5). The second semiconductor material has such a doping concentration that Auger recombination occurs. The invention also relates to a semiconductor device comprising such a bipolar transistor.

Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material.

Abstract: The performance of high-voltage devices is often influenced by charge-creep effects in the package. In order to avoid the resultant degradation, a bleeder may be used between the device and the package. However, it has been found in practice that the use of a high-resistive bleeder may lead to a certain instability of the device during operation. According to the invention, the bleeder (8) is provided with a plurality of conductive regions (12, 13) which are distributed in such a way that, when a high voltage is applied across the bleeder, a non-linear potential profile across the bleeder is obtained, which harmonizes with the ideal potential profile without the bleeder, instead of a linear profile which would have been obtained in the absence of said conductive regions due to charge-loading effects, and which would result in the above-mentioned instability effects.

Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material.

Abstract: The bipolar transistor comprises a collector region (1) of a semiconductor material with a first doping type, an emitter region (2) with a first doping type, and a base region (3) of a semiconductor material with a second doping type, opposite to the first doping type, which base region is arranged between the emitter region (2) and the collector region (1), and a semiconductor area (4) extending between the collector region (1) and the base region (3).

Abstract: The present invention relates to semi-conductor device comprising:

Abstract: A semiconductor arrangement including:

Abstract: An X-ray analysis crystal is also curved in a direction transverse to the dispersion direction to increase the radiation efficiency. As a result of this radiation diffracted at the crystal is focused towards a detector input. In order to ensure a non-deformable crystal surface the crystal is preferably bonded to a carrier having an adapted bonding profile.

Abstract: The invention relates to a magnetic material for use in the magnetic recording and playback of information, which material consists of ferrite particles having the composition A.sub.1-y Zn.sub.y Fe.sub.2 O.sub.4, wherein A is one or more bivalent metal ions, which material is suitable for use in a recording medium having a high information density in that the magnetic material comprises monodisperse ferrite particles having an average particle size between 5 and 250 nm, preferably between 10 and 50 nm, and in that y is between 0.05 and 0.35. The magnetic material preferably is Co-Zn-ferrite. The material is manufactured by coprecipitation of a mixture of hydroxides succeeded by recrystallization at elevated temperature and pressure.

Abstract: Monolithic glass members are prepared by first hydrolyzing a solution of tetraethoxysilane in alcohol with an acid medium, and then gelating in a basic medium while using acid and base mediums to form compounds that volatilize during drying and sintering the gel. Substances, if any, which in the form of oxides can form a glass with SiO.sub.2, are added after hydrolyzing and prior to gelation.

Abstract: A crystal for an X-ray analysis apparatus is mounted on a carrier of an amorphous material whose bonding surface preferably obtains its desired geometry by grinding and polishing. Using a suitably transparent carrier, use can be made of a UV-curable type of adhesive which is irradiated through the carrier. The thickness of the layer of glue can be checked, if desired, via the same path. Because no disturbing background radiation is generated by an amorphous carrier, local irregularities are avoided, and better thermal adaptation of carrier and crystal material is feasible, such a crystal will contribute to a substantially higher resolution when used in an X-ray analysis apparatus.

Abstract: The invention provides a method of manufacturing a hollow metal light conductor in which at least one metal layer is provided on a core of a synthetic resin material, for example, polymethylmethacrylate, after which the core is removed, and a metal tube is formed. The core is preferably removed by slightly elongating the core so that the cross-section is reduced, after which the metal light conductor can be pulled from the core. The reflecting metal layer on the inside surface of the light conductor preferably is of aluminium. The invention provides a hollow metal light conductor, for example, for use in an optical spectrometer, which is also suitable in particular to be used for light having a short wavelength, to less than 200 nm.