Abstract: A magnetic memory device contains a synthetic antiferromagnetic (SAF) structure that includes an antiferromagnetically coupled stack and a reference layer. The antiferromagnetically coupled stack contains plural multilayer stacks. Each multilayer stack contains at least one ferromagnetic material layer, a non-magnetic layer and a non-magnetic SAF spacer layer having a different composition than the non-magnetic layer.

Abstract: The present invention relates to a method for treating a subject suffering from a liver disease comprising a step of administering said subject with a therapeutically effective amount of an inhibitor of the endoribonuclease activity of IRE1?. Inventors have shown that in livers of tunicamycin-treated BI-1?/? mice aIRE1?-dependent NLRP3 inflammasome activation, an hepatocyte death, a fibrosis and a dysregulated lipid homeostasis that led to liver failure within a week. To test whether the pharmacological inhibition of IRE1? endoribonuclease activity would block the transition to NASH, mice were injected with the small molecule STF-083010 twice a week for 2 weeks towards the end of a 3-month HFD. In BI-1?/? mice, STF-083010 treatment effectively counteracted IRE1? endoribonuclease activity, improving glucose tolerance and rescuing from NASH.

Abstract: A light fixture includes a main body, at least a portion of which is generally cylindrical, the main body having an open side, and one or more light sources disposed within the main body. The light fixture further includes one or more mounting rings configured to substantially encircle the main body and configured for mounting the light fixture. A diffuser may be provided, covering the open side of the main body and enclosing the one or more light sources within the light fixture.

Abstract: A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.

Abstract: A phase change memory device includes a phase change material portion located between a first electrode and a second electrode, and a crystallization template material portion located between the first electrode and the second electrode in contact with the phase change material portion. The crystallization template material portion and the phase change material portion belong to a same crystal system and have matching lattice spacing, or the crystallization template material portion and the phase change material portion do not belong to the same crystal system, but have a matching translational symmetry along at least one paired lattice plane with a matching lattice spacing.

Abstract: Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.

Abstract: Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.

Abstract: Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.

Abstract: A retrofit kit for a light fixture includes a light engine and a mounting bracket. In some aspects, a method of installing the retrofit kit in a light fixture includes installing a mounting bracket in a housing of the light fixture, and placing a light engine in a temporary hanging position. In the temporary hanging position, a hook of a first engine flange of the light engine rests on the mounting bracket and a second engine flange of the light engine opposite from the first engine flange is spaced apart from the mounting bracket.

Abstract: A light fixture includes an electronic accessory module such as a wireless communication module, and a clip for mounting the accessory module to a panel of the light fixture. The clip includes features for snapping the accessory module to a panel of the light fixture, for example to a printed circuit board holding light emitting diodes or to a sheet metal panel that is part of the structure of the light fixture. The clip may hold the accessory module electronics away from any metal parts of the light fixture. In the case that the accessory module is a wireless communication module, this spacing may facilitate robust wireless communication.

Abstract: A light fixture includes an electronic accessory module such as a wireless communication module, and a clip for mounting the accessory module to a panel of the light fixture. The clip includes features for snapping the accessory module to a panel of the light fixture, for example to a printed circuit board holding light emitting diodes or to a sheet metal panel that is part of the structure of the light fixture. The clip may hold the accessory module electronics away from any metal parts of the light fixture. In the case that the accessory module is a wireless communication module, this spacing may facilitate robust wireless communication.

Abstract: Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.

Abstract: A light fixture includes a housing and a light trap. The light trap includes a wireless communication module support adapted to removably support a wireless communication module such as a Bluetooth Low Energy (BLE) module on the light trap. A retrofit kit for an existing light fixture includes a light trap and a wireless communication module. The light trap is adapted to span a gap between a housing and an optic of the existing light fixture and includes a wireless communication module support. The wireless communication module is removably supported by the wireless communication module on the light trap.

Abstract: A light fixture includes a main body, at least a portion of which is generally cylindrical, the main body having an open side, and one or more light sources disposed within the main body. The light fixture further includes one or more mounting rings configured to substantially encircle the main body and configured for mounting the light fixture. A diffuser may be provided, covering the open side of the main body and enclosing the one or more light sources within the light fixture.

Abstract: Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structures are provided. An exemplary method for fabricating an integrated circuit includes forming a magnetic tunnel junction (MTJ) structure and conformally forming a metal oxide encapsulation layer over and around the MTJ structure. The method further includes removing a portion of the metal oxide encapsulation layer over MTJ structure. Also, the method includes forming a conductive via over and in electrical communication with the top surface of the MTJ structure.

Abstract: Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode and a base layer over the bottom electrode. The base layer includes a seed layer and a roughness suppression layer. The spin transfer torque magnetic random access memory structure further includes a hard layer over the base layer. Also, the spin transfer torque magnetic random access memory structure includes a magnetic tunnel junction (MTJ) element with a perpendicular orientation over the hard layer and a top electrode over the MTJ element.

Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a seed layer, first and second pinned layers, and a coupling layer. The seed layer includes holmium. The first pinned layer overlies the seed layer, where the first pinned layer is magnetic, and the non-magnetic coupling layer overlies the first pinned layer. The second pinned layer overlies the coupling layer, where the second pinned layer is also magnetic.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode, a seed layer over the bottom electrode, a hard layer over the seed layer, a magnetically continuous transition layer over the hard layer, a reference layer over the magnetically continuous transition layer, a tunnel barrier layer over the reference layer, a storage layer formed over the tunnel barrier layer, and a top electrode. The reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation.

Abstract: Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode, a seed layer over the bottom electrode, a hard layer over the seed layer, a magnetically continuous transition layer over the hard layer, a reference layer over the magnetically continuous transition layer, a tunnel barrier layer over the reference layer, a storage layer formed over the tunnel barrier layer, and a top electrode. The reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation.