Patents by Inventor Albert Zhong

Albert Zhong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
    Publication number: 20230413696
    Abstract: Some embodiments relate to a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A data storage layer is formed on the bottom electrode. A diffusion barrier layer is formed over the data storage layer. The diffusion barrier layer has a first diffusion activation temperature. A top electrode is formed over the diffusion barrier layer. The top electrode has a second diffusion activation temperature less than the first diffusion activation temperature.
    Type: Application
    Filed: July 31, 2023
    Publication date: December 21, 2023
    Inventors: Albert Zhong, Cheng-Yuan Tsai, Hai-Dang Trinh, Shing-Chyang Pan
  • Diffusion barrier layer in programmable metallization cell
    Patent number: 11778931
    Abstract: Some embodiments relate to a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A data storage layer is formed on the bottom electrode. A diffusion barrier layer is formed over the data storage layer. The diffusion barrier layer has a first diffusion activation temperature. A top electrode is formed over the diffusion barrier layer. The top electrode has a second diffusion activation temperature less than the first diffusion activation temperature.
    Type: Grant
    Filed: July 20, 2022
    Date of Patent: October 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Albert Zhong, Cheng-Yuan Tsai, Hai-Dang Trinh, Shing-Chyang Pan
  • Diffusion barrier layer in programmable metallization cell
    Patent number: 11594678
    Abstract: Some embodiments relate to a memory device. The memory device includes a bottom electrode overlying a substrate. A data storage layer overlies the bottom electrode. A top electrode overlies the data storage layer. A conductive bridge is selectively formable within the data storage layer to couple the bottom electrode to the top electrode. A diffusion barrier layer is disposed between the data storage layer and the top electrode.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: February 28, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Albert Zhong, Cheng-Yuan Tsai, Hai-Dang Trinh, Shing-Chyang Pan
  • DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
    Publication number: 20220367801
    Abstract: Some embodiments relate to a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A data storage layer is formed on the bottom electrode. A diffusion barrier layer is formed over the data storage layer. The diffusion barrier layer has a first diffusion activation temperature. A top electrode is formed over the diffusion barrier layer. The top electrode has a second diffusion activation temperature less than the first diffusion activation temperature.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 17, 2022
    Inventors: Albert Zhong, Cheng-Yuan Tsai, Hai-Dang Trinh, Shing-Chyang Pan
  • DIFFUSION BARRIER LAYER IN PROGRAMMABLE METALLIZATION CELL
    Publication number: 20210280780
    Abstract: Some embodiments relate to a memory device. The memory device includes a bottom electrode overlying a substrate. A data storage layer overlies the bottom electrode. A top electrode overlies the data storage layer. A conductive bridge is selectively formable within the data storage layer to couple the bottom electrode to the top electrode. A diffusion barrier layer is disposed between the data storage layer and the top electrode.
    Type: Application
    Filed: March 3, 2020
    Publication date: September 9, 2021
    Inventors: Albert Zhong, Cheng-Yuan Tsai, Hai-Dang Trinh, Shing-Chyang Pan