Abstract: A packaged RF power amplifier comprises an output network coupled to the output of a RF power transistor, which output network comprises a plurality of first bondwires extending along a first direction between the output of transistor and an output lead of the package, a series connection of a second inductor and a first capacitor between the output of the RF power transistor and ground, and a series connection of a third inductor and a second capacitor connected in between ground and the junction between the second inductor and the first capacitor. The first and second capacitors are integrated on a single passive die and the third inductor comprises a first part and a second part connected in series, wherein the first part extends at least partially along the first direction, and wherein the second part extends at least partially in a direction opposite to the first direction.

Abstract: A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).

Abstract: A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor (2), a biasing circuit (6) biasing the power transistor; a peak detector (8) measuring the output voltage of the power transistor; and a comparator circuit (12) connected to the peak detector (8) and designed to reduce the base current of the power transistor (2) when controlled by the peak detector (8).