Patents by Inventor Alec Fischer

Alec Fischer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Engineered substrates, free-standing semiconductor microstructures, and related systems and methods
    Patent number: 11952268
    Abstract: A free-standing microstructure may be formed from an engineered substrate including a first silicon layer, a second silicon layer, and an intermediate layer. The second silicon layer may include a monocrystalline silicon film. The intermediate layer may be between the first silicon layer and the second silicon layer. The intermediate layer may include a silicon- or germanium-based material having a different lattice constant than the first silicon layer or the second silicon layer. The intermediate layer of the free-standing microstructure may further include one or more voids wherein at least a portion of the silicon- or germanium-based material is absent between the first silicon layer and the second silicon layer.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: April 9, 2024
    Assignee: Lawrence Semiconductor Research Laboratory, Inc.
    Inventors: Chantal Arena, Nupur Bhargava, Alec Fischer
  • ENGINEERED SUBSTRATES, FREE-STANDING SEMICONDUCTOR MICROSTRUCTURES, AND RELATED SYSTEMS AND METHODS
    Publication number: 20220396476
    Abstract: A free-standing microstructure may be formed from an engineered substrate including a first silicon layer, a second silicon layer, and an intermediate layer. The second silicon layer may include a monocrystalline silicon film. The intermediate layer may be between the first silicon layer and the second silicon layer. The intermediate layer may include a silicon- or germanium-based material having a different lattice constant than the first silicon layer or the second silicon layer. The intermediate layer of the free-standing microstructure may further include one or more voids wherein at least a portion of the silicon- or germanium-based material is absent between the first silicon layer and the second silicon layer.
    Type: Application
    Filed: June 14, 2021
    Publication date: December 15, 2022
    Inventors: Chantal Arena, Nupur Bhargava, Alec Fischer