Abstract: A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell. A second non-conductive layer is deposited above the first non-conductive layer. A second well is defined by the second non-conductive layer and positioned directly above the first well. A second electrically conductive liner lines at least one wall of the second well such that the second electrically conductive liner is not in physical contact with the first electrically conductive liner. Furthermore, the phase change material is deposited in the second well.

Abstract: A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.

Abstract: A controllable emitter of an irrigation apparatus including a drip line having pressurized fluid therein is provided. The controllable emitter includes a container coupled to the drip line, the container being formed to define an interior and including an inlet through which the pressurized fluid is receivable in the interior from the drip line and an outlet through which the pressurized fluid is exhaustible from the interior, a magnetic stopper, which is normally disposable in a first position such that the magnetic stopper prevents a flow of the pressurized fluid through the outlet and which is actively disposable in a second position such that the magnetic stopper permits the flow and a controllable actuator configured to generate a magnetic field operable to urge the magnetic stopper to move from the first position to the second position.

Abstract: A controllable emitter of an irrigation apparatus including a drip line and a control station configured to control a pressure of pressurized fluid in the drip line is provided. The controllable emitter is disposable along the drip line and includes a container coupled to the drip line, the container being formed to define an interior and including an inlet through which the pressurized fluid is receivable in the interior from the drip line and an outlet through which the pressurized fluid is exhaustible from the interior, a piston, including a magnetic element, disposed at least partially in the container to occupy a position in accordance with the pressure of the pressurized fluid and a sensor configured to sense a position of the magnetic element and to communicate a sensed position to the control station.

Abstract: A phase change memory cell, an array of the phase change memory cells, and a method for fabricating the phase change memory cells. The phase change memory cell includes a bottom electrode, a heating element, and a heat shield. During programming of the phase change memory cell, the bottom electrode passes current to the phase change memory cell. The heating element is electrically coupled to the bottom electrode and generates heat during the programming of the phase change memory cell. The heat shield is thermally conductive and surrounds at least a portion of the heating element. The heat shield conducts heat generated during programming of the phase change memory cell to the bottom electrode.

Abstract: Memory cell structures for phase change memory. An example memory cell structure comprising includes a bottom electrode comprised of electrically conducting material, and phase change material disposed above the bottom electrode. A layer of thermally insulating material is disposed, at least partially, between the bottom electrode and the phase change material. The thermally insulating material is comprised of Tantalum Oxide. A top electrode is comprised of electrically conducting material.

Abstract: A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.

Abstract: A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.

Abstract: An example embodiment is a phase change memory cell including a bottom electrode and phase change material carried within a via above the bottom electrode. A surfactant layer is deposited above the bottom electrode. The surfactant layer includes a surfactant configured to lower an interfacial force between the phase change material and the via surface.

Abstract: A memory cell and a method of making the same, that includes insulating material deposited on a substrate, a bottom electrode formed within the insulating material, a plurality of insulating layers deposited above the bottom electrode and at least one of which acts as an intermediate insulating layer. A via is defined in the insulating layers above the intermediate insulating layer. A channel is created for etch with a sacrificial spacer. A pore is defined in the intermediate insulating layer. All insulating layers above the intermediate insulating layer are removed, and the entirety of the remaining pore is filled with phase change material. An upper electrode is formed above the phase change material.

Abstract: A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating material is coplanar with an upper surface of the pillar; recessing the upper surface of the pillar below the upper surface of the insulating material to provide a recessed cavity; and forming a second phase change material atop the recessed cavity and the upper surface of the insulating material, wherein the second phase change material has a greater phase resistivity than the first phase change material.

Abstract: A phase change memory cell with substantially void free crystalline phase change material. An example memory cell includes a substrate and a bottom electrode carried by the substrate. The bottom electrode is a thermal conductor. A phase change layer includes phase change material. The phase change layer is void free within a switching region when the phase change material is in a crystalline phase. A top electrode is positioned over the phase change layer.

Abstract: A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, forming a dielectric layer along exposed areas of the substrate surrounding the pillar heaters, forming an interlevel dielectric (ILD) layer above the dielectric layer, etching a via to the dielectric layer, each via corresponding to each of pillar heater such that an upper surface of each pillar heater is exposed within each via, recessing each pillar heater, depositing phase change material in each via on each recessed pillar heater, recessing the phase change material within each via, and forming a top electrode within the via on the phase change material.

Abstract: An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode.

Abstract: An example embodiment disclosed is a process for fabricating a phase change memory cell. The method includes forming a bottom electrode, creating a pore in an insulating layer above the bottom electrode, depositing piezoelectric material in the pore, depositing phase change material in the pore proximate the piezoelectric material, and forming a top electrode over the phase change material. Depositing the piezoelectric material in the pore may include conforming the piezoelectric material to at least one wall defining the pore such that the piezoelectric material is deposited between the phase change material and the wall. The conformal deposition may be achieved by chemical vapor deposition (CVD) or by atomic layer deposition (ALD).

Abstract: Memory cell structures for phase change memory. An example memory cell structure comprising includes a bottom electrode comprised of electrically conducting material, and phase change material disposed above the bottom electrode. A layer of thermally insulating material is disposed, at least partially, between the bottom electrode and the phase change material. The thermally insulating material is comprised of Tantalum Oxide. A top electrode is comprised of electrically conducting material.

Abstract: An example embodiment disclosed is a phase change memory cell. The memory cell includes a phase change material and a transducer positioned proximate the phase change material. The phase change material is switchable between at least an amorphous state and a crystalline state. The transducer is configured to activate when the phase change material is changed from the amorphous state to the crystalline state. In a particular embodiment, the transducer is ferroelectric material.

Abstract: A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom electrode. The method includes depositing a thermally insulating layer along at least one sidewall of the pore. The thermally insulating layer isolates heat from phase change current to the volume of the pore. In one embodiment phase change material is deposited within the pore and the volume of the thermally insulating layer. In another embodiment a pore electrode is formed within the pore and the volume of the thermally insulating layer, with the phase change material being deposited above the pore electrode. The method also includes forming an electrically conducting top electrode above the phase change material.

Abstract: A phase change memory cell having a flat lower bottom electrode and a method for fabricating the same. The method includes forming a dielectric layer over a substrate including an array of conductive contacts, patterning, a via having a low aspect ratio such that a depth of the via is less than a width thereof, to a contact surface of the substrate corresponding to each of the array of conductive contacts to be connected to access circuitry, etching the dielectric layer and depositing electrode material over the etched dielectric layer and within each via, and planarizing the electrode material to form a plurality of lower bottom electrodes on each of the conductive contacts.

Abstract: A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom electrode. The method includes depositing a thermally insulating layer along at least one sidewall of the pore. The thermally insulating layer isolates heat from phase change current to the volume of the pore. In one embodiment phase change material is deposited within the pore and the volume of the thermally insulating layer. In another embodiment a pore electrode is formed within the pore and the volume of the thermally insulating layer, with the phase change material being deposited above the pore electrode. The method also includes forming an electrically conducting top electrode above the phase change material.