Abstract: A method of producing gemstones from silicon carbide comprises growing simultaneously a plurality of moissanite crystal blanks in a graphite mold, splitting up the blanks into individual crystals, and faceting same. The plurality of grown blanks can be subjected to annealing to facilitate splitting. Faceting can comprise rough cutting, grinding and polishing. Prior to faceting, the blanks are attached to a mandrel with one side thereof. After faceting, the blanks are attached to a mandrel with their reverse side, and faceting is repeated. It is ensured that the depth of scratches be less than the length of a light wave in the visible part of the spectrum. The cut and cleaved edges and defective blanks unsuitable for faceting are pulverized and returned to the stage of growing.