Abstract: A galvanic isolation circuit is formed by a differential transformer having primary and secondary windings for transmission of signals over a carrier between the primary and the secondary windings of the transformer. A galvanic isolation oxide layer is provide between the primary and secondary windings. Each winding includes include a center tap providing a low-impedance paths for dc and low frequency components of common-mode currents through the differential transformer. A pass-band stage is coupled to the secondary winding of the transformer and configured to permit propagation of signals over said carrier through the pass-band amplifier stage while providing for a rejection of common-mode noise.

Abstract: A galvanic isolation is provided between a first circuit and a second circuit. A first galvanically isolated link is configured to transfer power from a first circuit to a second circuit across the galvanic isolation. A second galvanically isolated link is configured to feed back an error signal from the second circuit to the first circuit across the galvanic isolation for use in regulating the power transfer and further configured to support bidirectional data communication between the first and second circuits across the galvanic isolation.

Abstract: A process is disclosed for purifying silicon wherein silicon in the molten state is reacted with barium carbonate and/or oxide and/or hydroxide and then, after cooling and crushing, leached with one or more dilute inorganic acids. Preferably an oxidizing gas such as oxygen or water vapor is blown into the molten mass during the reaction, which is conducted at a temperature in the range of from 1550.degree. to 2000.degree. C. The inorganic acid may be for example hydrochloric acid, hydrofluoric acid, nitric acid, sulphuric acid, or mixtures thereof.