Abstract: A semiconductor device which produces at least 1 W/m2 two photon emission power per area, when operating at one or more temperatures greater than 20 K.

Abstract: A system for measuring one or more characteristics of light of a photon energy Eph from a light source, that can be determined from measuring three-photon absorption events, the system comprising: a) a detector having a band gap material characterized by gap energy between 2.1 and 3 times Eph; b) an optical element configured to concentrate a beam of light from the light source on the detector; c) a signal amplifier that amplifies an output signal indicative of when three photons produced by the light source undergo a three-photon absorption event in the band gap material; and d) an analyzer that analyzes the output signal to count or measure a rate of the three-photon absorption events, and determines the one or more characteristics of the light from the light source.

Abstract: The present invention introduces a new technique allowing the fabrication of high-aspect ratio nanoscale semiconductor structures and local device modifications using FIB technology. The unwanted semiconductor sputtering in the beam tail region prevented by a thin slow-sputter-rate layer which responds much slower and mostly to the high-intensity ion beam center, thus acting as a saturated absorber funnel-like mask for the semiconductor. The protective layer can be deposited locally using FIB, thus enabling this technique for local device modifications, which is impossible using existing technology. Furthermore, such protective layers allow much higher resolution and nanoscale milling can be achieved with very high aspect ratios, e.g. Ti layer results in aspect ratio higher than 10 versus bare semiconductor milling ratio of about 3.

Abstract: A semiconductor, room-temperature, electrically excited, two-photon device with thick optically active layer is provided. The intrinsic AlGaAs active layer is sandwiched between two intrinsic graded waveguide layers having increased aluminum concentration at increased distance from the active layer. The waveguide structure is sandwiched between two cladding layers of high aluminum concentration, n and p doped respectively. The structure is epitaxially grown on a substrate and further comprises other layers such as buffer, graded layers and contact layers. An etched ridge provides lateral confinement for light. The device provides two-photons gain and may be used in light sources, optical amplifiers, pulse compressors and lasers.

Abstract: A system for measuring one or more characteristics of light of a photon energy Eph from a light source, that can be determined from measuring three-photon absorption events, the system comprising: a) a detector having a band gap material characterized by gap energy between 2.1 and 3 times Eph; b) an optical element configured to concentrate a beam of light from the light source on the detector; c) a signal amplifier that amplifies an output signal indicative of when three photons produced by the light source undergo a three-photon absorption event in the band gap material; and d) an analyzer that analyzes the output signal to count or measure a rate of the three-photon absorption events, and determines the one or more characteristics of the light from the light source.

Abstract: The present invention introduces a new technique allowing the fabrication of high-aspect ratio nanoscale semiconductor structures and local device modifications using FIB technology. The unwanted semiconductor sputtering in the beam tail region prevented by a thin slow-sputter-rate layer which responds much slower and mostly to the high-intensity ion beam center, thus acting as a saturated absorber funnel-like mask for the semiconductor. The protective layer can be deposited locally using FIB, thus enabling this technique for local device modifications, which is impossible using existing technology. Furthermore, such protective layers allow much higher resolution and nanoscale milling can be achieved with very high aspect ratios, e.g. Ti layer results in aspect ratio higher than 10 versus bare semiconductor milling ratio of about 3.

Abstract: A semiconductor device which produces at least 1 W/m2 two photon emission power per area, when operating at one or more temperatures greater than 20 K.