Abstract: Selected visual content is unobtrusively presented on a computing system display, so as not to obscure or prevent access to underlying content. The selected visual content may be designated from among various types of visual content by a user or by a program. The selected visual content is maintained as the topmost content so that it is not obscured by other visual content. In addition, the selected visual content is rendered to be at least partially visually transparent and functionally transparent, preferably using functionality already included in an operating system used by the computing system. The selected visual content can thus be viewed by a user while the user is still able to see and work with the other visual content on the display that may underlie the selected visual content, enabling the user to work more efficiently and make better use of the display.

Abstract: Selected visual content is unobtrusively presented on a computing system display, so as not to obscure or prevent access to underlying content. The selected visual content may be designated from among various types of visual content by a user or by a program. The selected visual content is maintained as the topmost content so that it is not obscured by other visual content. In addition, the selected visual content is rendered to be at least partially visually transparent and functionally transparent, preferably using functionality already included in an operating system used by the computing system. The selected visual content can thus be viewed by a user while the user is still able to see and work with the other visual content on the display that may underlie the selected visual content, enabling the user to work more efficiently and make better use of the display.

Abstract: A radiation hardened MOSFET is fabricated by forming a dielectric layer of boro-phosphosilicate glass (BPSG) over the field oxide layer of the MOSFET. The BPSG covers only a small part of the gate electrode of the MOSFET. The gate electrode of the MOSFET is formed from two layers of polycrystalline silicon so as to prevent contamination of the gate oxide by the BPSG dopants.