Abstract: An exemplary computing device includes a plurality of circuits and/or a plurality of in-situ monitors configured to generate outputs that indicate one or more operating conditions of the circuits. The computing device also includes a system management unit configured to detect a potentially faulty voltage-to-frequency ratio implemented by one of the circuits based at least in part on one or more of the outputs. The system management unit is also configured to modify the potentially faulty voltage-to-frequency ratio based at least in part on one or more of the outputs. Various other devices, systems, and methods are also disclosed.

Abstract: An integrated circuit memory is disclosed in which an array of 8 T SRAM cells is arranged in rows and columns using a plurality of write wordlines for each row of 8 T SRAM cells to control write access to cells in the row associated with a first parity/ECC word and a second write wordline operable to control write access to cells in the row associated with a second parity/ECC word.