Abstract: A top-emitting pixel device is disclosed. The pixel device may include a reflective bottom electrode disposed over a substrate, a first charge transport layer disposed over the reflective bottom electrode, an emissive layer disposed over the first charge transport layer, and a second charge transport layer disposed over the emissive layer. Further, the pixel device may include a patterned transparent polymer electrode disposed over the second charge transport layer and extending laterally to cover an emissive area of the top-emitting pixel device, and a patterned auxiliary electrode disposed at least partially over the patterned transparent polymer electrode outside of the emissive area of the top-emitting pixel device to make direct electrical contact with the patterned transparent polymer electrode.

Abstract: A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

Abstract: A touch panel display includes a display panel having a plurality of pixel regions that emit light, and a touch sensor having an electrode configuration that overlays the display panel. The electrode configuration includes a first electrode and a second electrode that are separated by an insulating region. The electrode separation distance between the first and second electrodes is in a range whereby (1) with increasing electrode separation distance a first rate of proportional decrease in mutual capacitance between the first and second electrodes is greater than a second rate of proportional decrease in signal magnitude of an output signal, and (2) a ratio (R) of the first rate to the second rate satisfies the relationship 1.0<R<2.5. With such parameters, the electrode separation distance may be from 30 ?m to 50 ?m, and/or from 0.5 to 0.75 times a pixel pitch of the pixel regions.

Abstract: A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.

Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.

Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.