Patents by Inventor Alexander Borshchevsky
Alexander Borshchevsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7098393Abstract: A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density.Type: GrantFiled: May 17, 2002Date of Patent: August 29, 2006Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Margaret A. Ryan, Alexander Borshchevsky, Jennifer Herman
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Patent number: 6942728Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4?xAxSb3?yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.Type: GrantFiled: October 1, 2002Date of Patent: September 13, 2005Assignee: California Institute of TechnologyInventors: Thierry Caillat, Alexander Borshchevsky, Jean-Pierre Fleurial
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Patent number: 6563039Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.Type: GrantFiled: January 17, 2001Date of Patent: May 13, 2003Assignee: California Institute of TechnologyInventors: Thierry Caillat, Jean-Pierre Fleurial, Alexander Borshchevsky, G. Jeffrey Snyder, Andrew Zoltan, Leslie Zoltan
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Publication number: 20030066476Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.Type: ApplicationFiled: October 1, 2002Publication date: April 10, 2003Applicant: California Institute of TechnologyInventors: Thierry Caillat, Alexander Borshchevsky, Jean-Pierre Fleurial
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Publication number: 20030047204Abstract: A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density.Type: ApplicationFiled: May 17, 2002Publication date: March 13, 2003Inventors: Jean-Pierre Fleurial, Margaret A. Ryan, Alexander Borshchevsky, Jennifer Herman
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Publication number: 20020175312Abstract: Chevrel phase materials are used as thermoelectric materials. The Chevrel phase materials are formed as units, and the units include voids between the units. Those voids may be filled with filling elements. The filling elements can be large elements such as lead, or smaller elements such as metals. Exemplary metals may include Cu, Ti, and/or Fe. Different Chevrel phase materials are discussed, including Mo based Chevrel phase materials and Re based Chevrel phase materials.Type: ApplicationFiled: July 11, 2001Publication date: November 28, 2002Inventors: Jean-Pierre Fleurial, G. Jeffrey Snyder, Alexander Borshchevsky, Thierry Caillat
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Patent number: 6458319Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.Type: GrantFiled: March 18, 1997Date of Patent: October 1, 2002Assignee: California Institute of TechnologyInventors: Thierry Caillat, Alexander Borshchevsky, Jean-Pierre Fleurial
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Publication number: 20020014261Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.Type: ApplicationFiled: January 17, 2001Publication date: February 7, 2002Inventors: Thierry Caillat, Jean-pierre Fleurial, Alexander Borshchevsky, G. Jeffrey Snyder, Andrew Zoltan, Leslie Zoltan
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Patent number: 6288321Abstract: A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a Bi2Te3-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.Type: GrantFiled: January 26, 1998Date of Patent: September 11, 2001Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, N. Thomas Olson, Alexander Borshchevsky, Thierry Caillat, Elizabeth Kolawa, M. Amy Ryan, Wayne M. Philips
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Patent number: 5831286Abstract: Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced semiconductor properties results in semiconductor materials which may be used in the fabrication of power semiconductor devices to substantially improve the efficiency of the resulting semiconductor device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing.Type: GrantFiled: May 7, 1996Date of Patent: November 3, 1998Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Thierry Caillat, Alexander Borshchevsky, Jan W. Vandersande
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Patent number: 5769943Abstract: Transition metals of Group VIII (Co, Rh and Ir) have been prepared as semiconductor compounds with the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freezing techniques and/or liquid phase sintering techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 1200 cm.sup.2.V.sup.-1.s.sup.-1) and good Seebeck coefficients (up to 150 .mu.VK.sup.-1 between 300.degree. C. and 700.degree. C.).Type: GrantFiled: August 3, 1993Date of Patent: June 23, 1998Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Thierry F. Caillat, Alexander Borshchevsky
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Advanced thermoelectric materials with enhanced crystal lattice structure and methods of preparation
Patent number: 5747728Abstract: New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients.Type: GrantFiled: March 29, 1995Date of Patent: May 5, 1998Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Thierry F. Caillat, Alexander Borshchevsky -
Patent number: 5610366Abstract: Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb having the general formula TSb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities (up to 8000 cm.sup.2.V.sup.-1.s.sup.-1), good Seebeck coefficients (up to 400 .mu.VK.sup.-1 between 300.degree. C.Type: GrantFiled: January 28, 1994Date of Patent: March 11, 1997Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Thierry F. Caillat, Alexander Borshchevsky
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Patent number: 4465545Abstract: The crystalline structure of cadmium telluride grown in a Bridgman process is enhanced by applying vibrations at a frequency less than 1000 hertz at a low amplitude whereby the cadmium telluride has vibrations with a displacement of less than one-tenth millimeter.Type: GrantFiled: July 30, 1982Date of Patent: August 14, 1984Assignee: The Board of Trustees of the Leland Stanford Junior UniversityInventors: Robert S. Feigelson, Alexander Borshchevsky