Patents by Inventor Alexander Derrickson
Alexander Derrickson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240170560Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a semiconductor layer, a substrate, and a dielectric layer disposed between the semiconductor layer and the substrate. The structure further comprises a first bipolar junction transistor including a first collector in the substrate, a first emitter, and a first base layer. The first base layer extends through the dielectric layer from the first emitter to the first collector. The structure further comprises a second bipolar junction transistor including a second collector in the substrate, a second emitter, and a second base layer. The second base layer extends through the dielectric layer from the second emitter to the second collector. The second base layer is connected to the first base layer by a section of the semiconductor layer to define a base line.Type: ApplicationFiled: November 21, 2022Publication date: May 23, 2024Inventors: Alexander Derrickson, Venkatesh Gopinath, John J. Pekarik, Hong Yu, Vibhor Jain, David Pritchard
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Publication number: 20240172455Abstract: Structures that include bipolar junction transistors and methods of forming such structures. The structure comprises a substrate having a top surface, a trench isolation region in the substrate, and a base layer on the top surface of the substrate. The base layer extending across the trench isolation region. A first bipolar junction transistor includes a first collector in the substrate and a first emitter on a first portion of the first base layer. The first portion of the first base layer is positioned between the first collector and the first emitter. A second bipolar junction transistor includes a second collector in the substrate and a second emitter on a second portion of the first base layer. The second portion of the first base layer is positioned between the second collector and the second emitter.Type: ApplicationFiled: November 21, 2022Publication date: May 23, 2024Inventors: John J. Pekarik, Hong Yu, Vibhor Jain, Alexander Derrickson, Venkatesh Gopinath
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Publication number: 20240147736Abstract: Structures that include resistive memory elements and methods of forming a structure that includes resistive memory elements. The structure comprises a bipolar junction transistor including a base, a first terminal having a first raised semiconductor layer over the base, and a second terminal having a second raised semiconductor layer over the base. The first raised semiconductor layer is spaced in a lateral direction from the second raised semiconductor layer. The structure further comprises a resistive memory element including a first electrode, a second electrode, and a switching layer between the first electrode and the second electrode. The first electrode of the resistive memory element is coupled to the first terminal of the bipolar junction transistor.Type: ApplicationFiled: October 26, 2022Publication date: May 2, 2024Inventors: Venkatesh P. Gopinath, Alexander Derrickson, Hongru Ren
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Publication number: 20240136400Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.Type: ApplicationFiled: January 5, 2024Publication date: April 25, 2024Inventors: Alexander Derrickson, Vibhor Jain, Judson R. Holt, Jagar Singh, Mankyu Yang
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Patent number: 11935923Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.Type: GrantFiled: November 12, 2021Date of Patent: March 19, 2024Assignee: GLOBALFOUNDRIES U.S. Inc.Inventors: Alexander Derrickson, Vibhor Jain, Judson R. Holt, Jagar Singh, Mankyu Yang
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Patent number: 11916136Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer on a semiconductor substrate, a second terminal having a second raised semiconductor layer on the semiconductor substrate, and an intrinsic base on the semiconductor substrate. The intrinsic base is positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The intrinsic base includes a portion containing silicon-germanium with a germanium concentration that is graded in the lateral direction.Type: GrantFiled: May 7, 2022Date of Patent: February 27, 2024Assignee: GlobalFoundries U.S. Inc.Inventors: Arkadiusz Malinowski, Alexander Derrickson, Judson Holt
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Publication number: 20240021713Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.Type: ApplicationFiled: September 27, 2023Publication date: January 18, 2024Inventors: Haiting Wang, Alexander Derrickson, Jagar Singh, Vibhor Jain, Andreas Knorr, Alexander Martin, Judson R. Holt, Zhenyu Hu
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Patent number: 11810969Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.Type: GrantFiled: October 25, 2021Date of Patent: November 7, 2023Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Haiting Wang, Alexander Derrickson, Jagar Singh, Vibhor Jain, Andreas Knorr, Alexander Martin, Judson R. Holt, Zhenyu Hu
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Patent number: 11749727Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first base layer, a second base layer, a first terminal positioned between the first base layer and the second base layer, a second terminal, and a third terminal. The first base layer, the second base layer, and the first terminal are positioned between the second terminal and the third terminal. For example, the first terminal may be positioned in a vertical direction between the first and second base layers.Type: GrantFiled: December 9, 2021Date of Patent: September 5, 2023Assignee: GlobalFoundries U.S. Inc.Inventors: Shesh Mani Pandey, Hong Yu, Alexander Derrickson
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Publication number: 20230275145Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer on a semiconductor substrate, a second terminal having a second raised semiconductor layer on the semiconductor substrate, and an intrinsic base on the semiconductor substrate. The intrinsic base is positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The intrinsic base includes a portion containing silicon-germanium with a germanium concentration that is graded in the lateral direction.Type: ApplicationFiled: May 7, 2022Publication date: August 31, 2023Inventors: Arkadiusz Malinowski, Alexander Derrickson, Judson Holt
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Patent number: 11710771Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes an emitter having a raised portion, a collector having a raised portion, and a base having a base layer and an extrinsic base layer stacked with the base layer. The base layer and the extrinsic base layer are positioned in a lateral direction between the raised portion of the emitter and the raised portion of the collector, the base layer has a first width in the lateral direction, the extrinsic base layer has a second width in the lateral direction, and the second width is greater than the first width.Type: GrantFiled: November 11, 2021Date of Patent: July 25, 2023Assignee: GlobalFoundries U.S. Inc.Inventors: Alexander Derrickson, Judson R. Holt, Haiting Wang, Jagar Singh, Vibhor Jain
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Patent number: 11652142Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.Type: GrantFiled: September 22, 2021Date of Patent: May 16, 2023Assignee: GlobalFoundries U.S. Inc.Inventors: Mankyu Yang, Richard Taylor, III, Alexander Derrickson, Alexander Martin, Jagar Singh, Judson Robert Holt, Haiting Wang
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Patent number: 11637181Abstract: The present disclosure relates to semiconductor structures and, more particularly, to lateral bipolar transistors and methods of manufacture. The structure includes: an extrinsic base comprising semiconductor material; an intrinsic base comprising semiconductor material which is located below the extrinsic base; a polysilicon emitter on a first side of the extrinsic base; a raised collector on a second side of the extrinsic base; and sidewall spacers on the extrinsic base which separate the extrinsic base from the polysilicon emitter and the raised collector.Type: GrantFiled: October 25, 2021Date of Patent: April 25, 2023Assignee: GLOBALFOUNDRIES U.S. INC.Inventors: Vibhor Jain, Alvin J. Joseph, Alexander Derrickson, Judson R. Holt, John J. Pekarik
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Publication number: 20230096328Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes a first base layer, a second base layer, a first terminal positioned between the first base layer and the second base layer, a second terminal, and a third terminal. The first base layer, the second base layer, and the first terminal are positioned between the second terminal and the third terminal. For example, the first terminal may be positioned in a vertical direction between the first and second base layers.Type: ApplicationFiled: December 9, 2021Publication date: March 30, 2023Inventors: Shesh Mani Pandey, Hong Yu, Alexander Derrickson
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Publication number: 20230092435Abstract: A structure for a lateral bipolar junction transistor is provided. The structure comprising an emitter including a first concentration of a first dopant. A collector including a second concentration of the first dopant, the first concentration of the first dopant may be different from the second concentration of the first dopant. An intrinsic base may be laterally arranged between the emitter and the collector, and an extrinsic base region may be above the intrinsic base. An emitter extension may be arranged adjacent to the emitter, whereby the emitter extension laterally extends under a portion of the extrinsic base region. A halo region may be arranged adjacent to the emitter extension, whereby the halo region laterally extends under another portion of the extrinsic base region.Type: ApplicationFiled: September 22, 2021Publication date: March 23, 2023Inventors: MANKYU YANG, RICHARD TAYLOR, III, ALEXANDER DERRICKSON, ALEXANDER MARTIN, JAGAR SINGH, JUDSON ROBERT HOLT, HAITING WANG
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Publication number: 20230067486Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.Type: ApplicationFiled: November 12, 2021Publication date: March 2, 2023Inventors: Alexander Derrickson, Vibhor Jain, Judson R. Holt, Jagar Singh, Mankyu Yang
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Publication number: 20230066996Abstract: Structures for a bipolar junction transistor and methods of fabricating a structure for a bipolar junction transistor. The structure includes an emitter and a collector comprised of a first two-dimensional material having a first conductivity type, and an intrinsic base comprised of a second two-dimensional material having a second conductivity type different than the first conductivity type. The intrinsic base is laterally positioned between the emitter and the collector.Type: ApplicationFiled: December 3, 2021Publication date: March 2, 2023Inventors: Arkadiusz Malinowski, Alexander Derrickson
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Publication number: 20230066437Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. The structure includes: an extrinsic base having at least one sidewall with a gradient concentration of semiconductor material; an emitter on a first side of the extrinsic base; and a collector on a second side of the extrinsic base.Type: ApplicationFiled: November 12, 2021Publication date: March 2, 2023Inventors: Hong Yu, Judson R. Holt, Alexander Derrickson
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Publication number: 20230061219Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor and methods of manufacture. A structure includes: an intrinsic base comprising semiconductor material in a channel region of a semiconductor substrate; an extrinsic base vertically above the intrinsic base; a raised collector region on the semiconductor substrate and laterally connected to the intrinsic base; and a raised emitter region on the semiconductor substate and laterally connected to the intrinsic base.Type: ApplicationFiled: October 25, 2021Publication date: March 2, 2023Inventors: Haiting Wang, Alexander Derrickson, Jagar Singh, Vibhor Jain, Andreas Knorr, Alexander Martin, Judson R. Holt, Zhenyu Hu
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Publication number: 20230069207Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes an emitter having a raised portion, a collector having a raised portion, and a base having a base layer and an extrinsic base layer stacked with the base layer. The base layer and the extrinsic base layer are positioned in a lateral direction between the raised portion of the emitter and the raised portion of the collector, the base layer has a first width in the lateral direction, the extrinsic base layer has a second width in the lateral direction, and the second width is greater than the first width.Type: ApplicationFiled: November 11, 2021Publication date: March 2, 2023Inventors: Alexander Derrickson, Judson R. Holt, Haiting Wang, Jagar Singh, Vibhor Jain