Abstract: The invention relates to a method for producing a differential housing having at least one machined bearing body and a machined gearing. In order to improve the differential housing in terms of production technology and/or function, the differential housing which has the bearing body is cast from a nodular cast iron material before the differential housing which has the bearing body and the gearing is machined.

Abstract: A housing for an electric machine includes a substantially cup-shaped outer housing having a first base portion and a first tubular portion adjoining the base portion. An inner housing, which has a substantially cup-shaped form, is arranged in the outer housing and has a second base portion and a second tubular portion adjoining the base portion. A cover is connected or connectable to the outer housing and/or the inner housing. At least one cooling channel is formed between the first tubular portion and the second tubular portion. A pocket is formed in the first base portion and forms a first cavity together with the second base portion, and a second cavity is formed in the cover. The first cavity is fluidically connected to the cooling channel via a first bore and the second cavity is fluidically connected to the cooling channel via a second bore.

Abstract: A two-piece flexplate assembly having a ring gear welded to a central plate using a capacitor discharge welding process. The weld is established between a joining structure defined between the ring gear and the central plate using either an overlap arrangement, a projection arrangement, or a chamfer arrangement.

Abstract: An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.

Abstract: A two-piece flexplate assembly having a ring gear welded to a central plate using a capacitor discharge welding process. The weld is established between a joining structure defined between the ring gear and the central plate using either an overlap arrangement, a projection arrangement, or a chamfer arrangement.

Abstract: A joint site design for friction welding of a shaft of a hard material with a hub consisting of softer material, wherein the shaft has a tubular shape with an end face being joined to the hub having a connection area with a flat shape formed by a radial shoulder of the hub.

Abstract: A two-piece flexplate assembly having a ring gear welded to a central plate using a capacitor discharge welding process. The weld is established between a joining structure defined between the ring gear and the central plate using either an overlap arrangement, a projection arrangement, or a chamfer arrangement.

Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.

Abstract: The invention is a joint site design for friction welding of a shaft of a hard material with a hub consisting of softer material, wherein the shaft has a tubular shape with an end face being joined to the hub having a connection area with a flat shape formed by a radial shoulder of the hub.

Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and the at least one doped portion meet. The device further includes at least one additional portion, wherein the at least one additional portion is located such that, when the doped portions and the at least one additional portion are biased, the electrical potential lines leave the semiconductor drift portion homogeneously.

Abstract: A gear housing comprised of a first gear housing portion and a second gear housing portion, wherein the first gear housing portion and the second gear housing portion are permanently connected to each other by means of a friction stir welding connection, and a corresponding method for producing such a gear housing.

Abstract: A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.

Abstract: A method for connecting a shaft and a hub, the hub having a first joining portion and a second joining portion for a connection to corresponding joining portions of the shaft. The shaft and the hub are pressed together at contact points in the area of the first joining portions, while the second joining portions are not yet in contact with one another, and a welding current is fed via the contact points of the parts that have been pressed together, so that the contact points fuse. The shaft is pressed into the hub, while the first joining portions are being fused, until substantially a press fit is formed between the second joining portions.

Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.

Abstract: A joint site design for welding of a shaft has a tubular shape composed of a hard material with a hub having a flat shape composed of softer material. The shaft is joined by welding at a connection area located at an end face thereof to a connection area of the hub located at a radial shoulder thereof.

Abstract: A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.

Abstract: An SOI or PSOI device including a device structure having a plurality of doped semiconductor regions. One or more of the doped semiconductor regions is in electrical communication with one or more electrical terminals. The device further includes an insulator layer located between a bottom surface of the device structure and a handle wafer. The device has an insulator trench structure located between a side surface of the device structure and a lateral semiconductor region located laterally with respect to the device structure. The insulator layer and the insulator trench structure are configured to insulate the device structure from the handle wafer and the lateral semiconductor region, and the insulator trench structure includes a plurality of insulator trenches.

Abstract: A high voltage metal oxide semiconductor (HVMOS) transistor (1) comprises a drift region (8) comprising a material having a mobility which is higher than a mobility of Si. There is also provided a method of manufacturing said transistor, the method comprising forming a drift region comprising a material having a mobility which is higher than a mobility of Silicon. The material can be a Si—Ge strained material. The on- resistance is reduced compared to a transistor with a drift region made of Si, so that the trade-off between breakdown voltage and on-resistance is improved.

Abstract: A method for connecting a shaft and a hub, the hub having a first joining portion and a second joining portion for a connection to corresponding joining portions of the shaft. The shaft and the hub are pressed together at contact points in the area of the first joining portions, while the second joining portions are not yet in contact with one another, and a welding current is fed via the contact points of the parts that have been pressed together, so that the contact points fuse. The shaft is pressed into the hub, while the first joining portions are being fused, until substantially a press fit is formed between the second joining portions.

Abstract: A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.