Abstract: A data collection device comprises: a first portion having one or more features configured for attaching of the first portion to a dosage knob of an injection device; a second portion rotatably coupled with the first portion, wherein at least part of the second portion is movable axially relative to the first portion; a sensor arrangement configured to detect rotation of the first portion relative to the second portion; and a processor arrangement configured to, based on said detected movement, determine a medicament amount expelled by the injection device, wherein the coupling arrangement is configured to provide a non-permanent coupling between the first portion and the dosage knob of the injection device.

Abstract: A method for fabricating a SiC power semiconductor device includes: providing a SiC power semiconductor die; depositing a metallization layer over the power semiconductor die, the metallization layer including a first metal; arranging the power semiconductor die over a die carrier such that the metallization layer faces the die carrier, the die carrier being at least partially covered by a plating that includes Ni; and diffusion soldering the power semiconductor die to the die carrier such that a first intermetallic compound is formed between the power semiconductor die and the plating, the first intermetallic compound including Ni3Sn4.

Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

Abstract: A data collection device comprises: a first portion having one or more features configured for attaching of the first portion to a dosage knob of an injection device; a second portion rotatably coupled with the first portion, wherein at least part of the second portion is movable axially relative to the first portion; a sensor arrangement configured to detect rotation of the first portion relative to the second portion; and a processor arrangement configured to, based on said detected movement, determine a medicament amount expelled by the injection device, wherein the coupling arrangement is configured to provide a non-permanent coupling between the first portion and the dosage knob of the injection device.

Abstract: A method for fabricating a semiconductor device includes providing a semiconductor die, arranging an electrical connector over the semiconductor die, the electrical connector including a conductive core, an absorbing feature arranged on a first side of the conductive core, and a solder layer arranged on a second side of the conductive core, opposite the first side and facing the semiconductor die, and soldering the electrical connector onto the semiconductor die by heating the solder layer with a laser, wherein the laser irradiates the absorbing feature and absorbed energy is transferred from the absorbing feature through the conductive core to the solder layer.

Abstract: A method for fabricating a semiconductor device includes providing a die with a metallization layer including a first metal with a high melting point; providing a die carrier including a second metal with a high melting point; providing a solder material including a third metal with a low melting point; providing a layer of a fourth metal with a high melting point on the semiconductor die or the die carrier; and soldering the semiconductor die to the die carrier and creating: a first intermetallic compound between the semiconductor die and the die carrier and including the first metal and the third metal; a second intermetallic compound between the first intermetallic compound and the die carrier and including the second metal and the third metal; and precipitates of a third intermetallic compound between the first intermetallic compound and the second intermetallic compound and including the third metal and the fourth metal.

Abstract: A data collection device including an attachment assembly for attaching the data collection device to a dose setting dial of a medicament administration device, a light source configured to illuminate a portion of a surface of an internal component of the medicament administration device including a pattern of relatively reflective and non-reflecting regions formed on the surface of the internal component, and an optical sensor configured to receive light reflected by at least the relatively reflective regions.

Abstract: A method of forming a chip package is provided. The method includes providing a malleable carrier with a layer of an electrically conductive material formed thereon, and positive fitting the malleable carrier to a chip to at least partially enclose the chip with the malleable carrier. The layer at least partially physically contacts the chip, such that the layer electrically contacts a chip contact of the chip. The layer forms a redistribution layer.

Abstract: A power semiconductor module arrangement includes a power semiconductor module. The power semiconductor module includes a substrate and a heat-conducting layer arranged on a lower surface of the power semiconductor module. The lower surface of the power semiconductor module is a surface that is configured to be mounted to a heat sink. The heat-conducting layer includes a metallic foam and an eutectic material filling cavities within the metallic foam.

Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

Abstract: A power semiconductor module arrangement includes a power semiconductor module, wherein the power semiconductor module includes a substrate for carrying at least one semiconductor body, and a heat-conducting layer arranged on a lower surface of the power semiconductor module, wherein the lower surface of the power semiconductor module is a surface that is configured to be mounted to a heat sink, and wherein the heat-conducting layer consists of a metallic and non-eutectic material that is solid at temperatures below a first threshold temperature, that is viscous at temperatures above the first threshold temperature and below a second threshold temperature, and that is fluid at temperatures above the second threshold temperature.

Abstract: A semiconductor device includes a semiconductor die with a metallization layer including a first metal with a comparatively high melting point, a die carrier including a second metal with a comparatively high melting point, a first intermetallic compound arranged between the semiconductor die and the die carrier and including the first metal and a third metal with a comparatively low melting point, a second intermetallic compound arranged between the first intermetallic compound and the die carrier and including the second metal and the third metal, and precipitates of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and including the third metal and a fourth metal with a comparatively high melting point.

Abstract: A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Abstract: A semiconductor package includes a power semi conductor chip comprising SiC, a leadframe part including Cu, wherein the power semiconductor chip is arranged on the leadframe part, and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe part, wherein the solder joint includes at least one intermetallic phase.

Abstract: A data collection device comprises: a first portion having one or more features configured for attaching of the first portion to a dosage knob of an injection device; a second portion rotatably coupled with the first portion, wherein at least part of the second portion is movable axially relative to the first portion; a sensor arrangement configured to detect rotation of the first portion relative to the second portion; and a processor arrangement configured to, based on said detected movement, determine a medicament amount expelled by the injection device, wherein the coupling arrangement is configured to provide a non-permanent coupling between the first portion and the dosage knob of the injection device.

Abstract: A data collection device comprises: a first portion having one or more features configured for attaching of the first portion to a dosage knob of an injection device; a second portion rotatably coupled with the first portion, wherein at least part of the second portion is movable axially relative to the first portion; a sensor arrangement configured to detect rotation of the first portion relative to the second portion; and a processor arrangement configured to, based on said detected movement, determine a medicament amount expelled by the injection device, wherein the coupling arrangement is configured to provide a non-permanent coupling between the first portion and the dosage knob of the injection device.

Abstract: An access arrangement for a vehicle comprises a vehicle transmission/reception device configured to transmit multiple interrogation signals to a mobile identification transmitter, receive corresponding response signals from the mobile identification transmitter in response to the transmitted interrogation signals, and determine a respective time interval that elapsed between the transmission of an interrogation signal and the reception of a corresponding response signal. Furthermore, the access arrangement comprises a vehicle control device configured to output a different control command based on a change in the specific time intervals for two transmitted interrogation signals. The interrogation signals and response signals are in accordance with the UWB standard.

Abstract: A semiconductor package includes a power semiconductor chip comprising SiC, a leadframe part comprising Cu, wherein the power semiconductor chip is arranged on the leadframe part, and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe part, wherein the solder joint comprises at least one intermetallic phase.

Abstract: An optoelectronic assembly includes: a plurality of semiconductor light sources, each one of the semiconductor light sources including a plurality of pads; and a driver device configured to drive each one of the semiconductor light sources. For each pad of each semiconductor light source, the driver device has a corresponding pad facing the pad of the semiconductor light source to form a pair of connectable pads. For each pair of connectable pads, a first pad of the pair of connectable pads has a first shape and a second pad of the pair of connectable pads has a second shape complementary to the first shape such that the first pad and the second pad form a mated connection when brought into contact with one another. Corresponding driver device and semiconductor light sources are also described.

Abstract: A method of forming a semiconductor package includes providing a panel, providing one or more metal layers on an upper surface of the panel, forming a die pad and bond pads from the one or more metal layers, the die pad being adjacent to and spaced apart from the bond pads, attaching a die to the die pad, forming electrical connections between the die and the bond pads, encapsulating the die and the electrical connections with an electrically insulating mold compound, removing portions of the panel, and exposing the die pad and the bond pads after encapsulating the die.