Patents by Inventor Alexander J. Noreika

Alexander J. Noreika has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deposition of solid semiconductor compositions and novel semiconductor materials
    Patent number: 4213781
    Abstract: Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1-x Si.sub.x, (GaAs).sub.1-x, Ge.sub.x, (InSb).sub.1-x Si.sub.x, (InSb).sub.1-x Ge.sub.x, (InAs).sub.1-x Si.sub.x and (InAs).sub.1-x Ge.sub.x (where x is a number greater than about 0.01, and x+(1-x)=1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x+y+z=1).
    Type: Grant
    Filed: November 20, 1978
    Date of Patent: July 22, 1980
    Assignee: Westinghouse Electric Corp.
    Inventors: Alexander J. Noreika, Maurice H. Francombe
  • Deposition of solid semiconductor compositions and novel semiconductor materials
    Patent number: 3979271
    Abstract: Solid layer semiconductor compositions are deposited by the simultaneous sputtering from a sputter target and electrically discharge a reacting gas preferably by application of an RF potential. Preferably, the method is used to make solid solution layers and most desirably solid solution epitaxial layers of at least two semiconductor materials. The method may be used to make novel metastable compositions such as (GaAs).sub.1.sub.-x Si.sub.x, (GaAs).sub.1.sub.-x Ge.sub.x, (InSb).sub.1.sub.-x Si.sub.x, (InSb).sub.1.sub.-x Ge.sub.x, (InAs).sub.1.sub.-x Si.sub.x and (InAs).sub.1.sub.-x Ge.sub.x (where x is a number greater than about 0.01, and x + (1-x) = 1, and Ga.sub.x As.sub.y Si.sub.z, Ga.sub.x As.sub.y Ge.sub.z, In.sub.x Sb.sub.y Si.sub.z, In.sub.x Sb.sub.y Ge.sub.z, In.sub.x As.sub.y Si.sub.z, In.sub.x As.sub.y Ge.sub.z and In.sub.x Sb.sub.y As.sub.z (where x, y and z are numbers greater than about 0.01, and x + y + z = 1).
    Type: Grant
    Filed: July 23, 1973
    Date of Patent: September 7, 1976
    Assignee: Westinghouse Electric Corporation
    Inventors: Alexander J. Noreika, Maurice H. Francombe