Abstract: A method for production testing includes receiving a wafer including a semiconductor substrate and a non-conducting layer formed over the substrate, following etching of contact openings through the non-conducting layer to the substrate, the contact openings including an array of the contact openings arranged in a predefined test pattern in a test area on the wafer. An electron beam is directed to irradiate the test area, a specimen current flowing through the substrate responsive to the electron beam is measured. The specimen current is analyzed so as to assess a dimension of the contact openings.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A method for measuring leakage through a dielectric layer of a semiconductor device on a wafer, including irradiating the dielectric layer with a charged particle beam having a beam current. The irradiation generates a wafer current having a relation to the beam current in a selected range of the beam current. The method further includes determining a boundary value of the beam current at which the relation is not satisfied, and determining a leakage current through the dielectric layer in response to the boundary value.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A system and method for detecting overlay errors, the method includes (i) directing a primary electron beam to interact with an inspected object; whereas the inspected object comprises a first feature formed on a first layer of the inspected object and a second feature formed on a second layer of the object, wherein the second feature is buried under the first layer and wherein the second feature affects a shape of an area of the first layer; (ii) detecting electrons reflected or scattered from the area of the first layer; and (iii) receiving detection signals from at least one detector and determining overlay errors.

Abstract: Apparatus for analysis of a thin film formed over an underlying layer on a surface of a sample, the thin film including first elements, while the underlying layer includes second elements. The apparatus includes an electron gun, which directs a beam of electrons to impinge on a point on the surface of the sample at which the thin film is formed. An electron detector receives Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons. A controller receives the signal and analyzes the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.

Abstract: A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

Abstract: A method for production testing includes receiving a wafer including a semiconductor substrate and a non-conducting layer formed over the substrate, following etching of contact openings through the non-conducting layer to the substrate, the contact openings including an array of the contact openings arranged in a predefined test pattern in a test area on the wafer. An electron beam is directed to irradiate the test area, a specimen current flowing through the substrate responsive to the electron beam is measured. The specimen current is analyzed so as to assess a dimension of the contact openings.

Abstract: Apparatus for analysis of a thin film formed over an underlying layer on a surface of a sample, the thin film including first elements, while the underlying layer includes second elements. The apparatus includes an electron gun, which directs a beam of electrons to impinge on a point on the surface of the sample at which the thin film is formed. An electron detector receives Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons. A controller receives the signal and analyzes the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film.

Abstract: A hybrid organic-inorganic semiconductor device is provided as a sensor for chemicals and light, said device being composed of: (i) at least one layer of a conducting semiconductor such as doped n-GaAs or n-(Al,Ga)As; (ii) at least one insulating layer such as of an undoped semiconductor; e.g. GaAs or (Al,Ga)As; (iii) a thin layer of multifunctional organic sensing molecules directly chemisorbed on one of its surfaces, said multifunctional organic sensing molecules having at least one functional group that binds to said surface and at least one another functional group that serves as a sensor; and (iv) two conducting pads on the top layer making electrical contact with the electrically conducting layer, so that the electrical current can flow between them at a finite distance from the surface of the device. The surface-binding functional group of the multifunctional organic sensing molecule may be one or more aliphatic or aromatic carboxyl, thiol, sulfide, hydroxamic acid or trichlorosilane groups.

Abstract: A method and system for automatic EDX analysis of defects quantitatively take into consideration x-ray signals attributable to the background. The method and system are capable of automatically identifying suitable locations for background and defect x-ray sampling. The method and system are also capable of effectively and quantitatively, rather than qualitatively, removing signals attributable to the background and not the defect. One advantageous feature that enables the method and system to have a high throughput is termed “trace element analysis.” The method and system are particularly beneficial for analysis of defects on semiconductor wafers and, due to automation, are suitable for in-line inspection of wafers in the fabrication plant.