Abstract: Systems, apparatus and methods for generation of XOR signature metadata and XOR signature management are presented. In one or more embodiments, a storage device controller includes a host interface, configured to receive one or more string lines (SLs) of data from a host, the one or more SLs to be programmed into a non-volatile memory (NVM), and processing circuitry. The processing circuitry is configured to, for each of the one or more SLs, generate signature metadata and provide the signature metadata in a header of the SL. The processing circuitry is still further configured to XOR two or more of the SLs with their respective signature metadata to generate a snapshot, and write the snapshot to the NVM.

Abstract: Systems, apparatus and methods for generation of XOR signature metadata and XOR signature management are presented. In one or more embodiments, a storage device controller includes a host interface, configured to receive one or more string lines (SLs) of data from a host, the one or more SLs to be programmed into a non-volatile memory (NVM), and processing circuitry. The processing circuitry is configured to, for each of the one or more SLs, generate signature metadata and provide the signature metadata in a header of the SL. The processing circuitry is still further configured to XOR two or more of the SLs with their respective signature metadata to generate a snapshot, and write the snapshot to the NVM.

Abstract: Systems and methods are described for predicting an endurance of groups of memory cells within a memory device, based on current characteristics of the cells. The endurance may be predicted by processing historical information regarding operation of memory devices according to a machine learning algorithm, such as a neural network algorithm, to generate correlation information between characteristics of groups of memory calls at a first time and an endurance metric at a second time. The correlation information can be applied to current characteristics of a group of memory cells to predict a future endurance of that group. Operating parameters of a memory device may be modified at a per-block level based on predicted block endurances to increase the speed of a device, the longevity of a device, or both.

Abstract: Systems, apparatus and methods for generation of XOR signature metadata and XOR signature management are presented. In one or more embodiments, a storage device controller includes a host interface, configured to receive one or more string lines (SLs) of data from a host, the one or more SLs to be programmed into a non-volatile memory (NVM), and processing circuitry. The processing circuitry is configured to, for each of the one or more SLs, generate signature metadata and provide the signature metadata in a header of the SL. The processing circuitry is still further configured to XOR two or more of the SLs with their respective signature metadata to generate a snapshot, and write the snapshot to the NVM.

Abstract: Systems, apparatus and methods for generation of XOR signature metadata and XOR signature management are presented. In one or more embodiments, a storage device controller includes a host interface, configured to receive one or more string lines (SLs) of data from a host, the one or more SLs to be programmed into a non-volatile memory (NVM), and processing circuitry. The processing circuitry is configured to, for each of the one or more SLs, generate signature metadata and provide the signature metadata in a header of the SL. The processing circuitry is still further configured to XOR two or more of the SLs with their respective signature metadata to generate a snapshot, and write the snapshot to the NVM.

Abstract: Systems and methods are described for predicting an endurance of groups of memory cells within a memory device, based on current characteristics of the cells. The endurance may be predicted by processing historical information regarding operation of memory devices according to a machine learning algorithm, such as a neural network algorithm, to generate correlation information between characteristics of groups of memory calls at a first time and an endurance metric at a second time. The correlation information can be applied to current characteristics of a group of memory cells to predict a future endurance of that group. Operating parameters of a memory device may be modified at a per-block level based on predicted block endurances to increase the speed of a device, the longevity of a device, or both.