Patents by Inventor Alexander Krechmer
Alexander Krechmer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9915628Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.Type: GrantFiled: June 6, 2016Date of Patent: March 13, 2018Assignee: TECHINSIGHTS INC.Inventors: Christopher Pawlowicz, Alexander Sorkin, Michael W. Phaneuf, Alexander Krechmer, Ken G. Lagarec
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Patent number: 9529040Abstract: Described are various embodiments of methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. In one such embodiment, a method is provide for identifying functional componentry associated with a switchable power interface on an integrated circuit, wherein the switchable power interface comprises a source and a drain with a control switch therebetween, said control switch being controllable by a control signal during operation of the integrated circuit. The method comprises connecting, with deposited conductive material, the source and the drain; applying an external voltage bias to a power input of the switchable power interface via one of the source and the drain; exposing the integrated circuit to a focused ion beam; and gathering an image of the integrated circuit during exposure to determine areas of high contrast indicating functional componentry in operative connection with the switchable power interface.Type: GrantFiled: July 28, 2015Date of Patent: December 27, 2016Assignee: TECHINSIGHTS INC.Inventors: Christopher Pawlowicz, Alexander Sorkin, Alexander Krechmer
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Publication number: 20160282287Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.Type: ApplicationFiled: June 6, 2016Publication date: September 29, 2016Inventors: Christopher PAWLOWICZ, Alexander SORKIN, Michael W. PHANEUF, Alexander KRECHMER, Ken G. LAGAREC
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Patent number: 9383327Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.Type: GrantFiled: June 19, 2014Date of Patent: July 5, 2016Assignee: TECHINSIGHTS INC.Inventors: Chris Pawlowicz, Alexander Sorkin, Michael W. Phaneuf, Alexander Krechmer, Ken G. Lagarec
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Publication number: 20160187419Abstract: Described are various embodiments of methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. In one such embodiment, a method is provide for identifying functional componentry associated with a switchable power interface on an integrated circuit, wherein the switchable power interface comprises a source and a drain with a control switch therebetween, said control switch being controllable by a control signal during operation of the integrated circuit. The method comprises connecting, with deposited conductive material, the source and the drain; applying an external voltage bias to a power input of the switchable power interface via one of the source and the drain; exposing the integrated circuit to a focused ion beam; and gathering an image of the integrated circuit during exposure to determine areas of high contrast indicating functional componentry in operative connection with the switchable power interface.Type: ApplicationFiled: July 28, 2015Publication date: June 30, 2016Inventors: Christopher PAWLOWICZ, Alexander SORKIN, Alexander KRECHMER
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Publication number: 20140319343Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.Type: ApplicationFiled: June 19, 2014Publication date: October 30, 2014Inventors: Chris Pawlowicz, Alexander Sorkin, Michael W. Phaneuf, Alexander Krechmer, Ken G. Lagarec
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Patent number: 8791436Abstract: Methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. A first component or node on an integrated circuit is coupled to a second component or node on the same integrated circuit. After an external bias is applied to the first component or node, a focused ion beam is applied to the integrated circuit and an image is taken using an electron detector. The features or components on the integrated circuit which are coupled to the second component or node will show up in high contrast on the resulting image. The method may also involve applying a bias to a node or component and then using focused ion beam imaging techniques (through an electron detector) to arrive at an image of the integrated circuit. Components coupled to the node will appear in high contrast in the resulting image.Type: GrantFiled: April 24, 2013Date of Patent: July 29, 2014Inventors: Chris Pawlowicz, Alexander Sorkin, Michael W. Phaneuf, Alexander Krechmer, Ken G. Lagarec
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Patent number: 8552406Abstract: An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.Type: GrantFiled: February 18, 2011Date of Patent: October 8, 2013Assignee: Fibics IncorporatedInventors: Michael William Phaneuf, Ken Guillaume Lagarec, Alexander Krechmer
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Patent number: 8466415Abstract: Methods for using sub-100V electron beam landing energies for performing circuit edit operations. Circuit edit operations can include imaging for navigation and etching in the presence of a suitable gas. Low landing energies can be obtained by modifying a decelerator system of native FESEM equipment, or by using biasing means near the sample surface for decelerating electrons of the primary beam. At low landing energies near the operating voltage of a semiconductor circuit, voltage contrast effects can be visually seen for enhancing operator navigation. Low landing energies can be used during etching processes for minimizing the interaction volume of the beam and obtaining accurate and localized etching.Type: GrantFiled: November 7, 2006Date of Patent: June 18, 2013Assignee: Fibics IncorporatedInventors: Michael William Phaneuf, Ken Guillaume Lagarec, Alexander Krechmer
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Publication number: 20110204263Abstract: Methods for using sub-100V electron beam landing energies for performing circuit edit operations. Circuit edit operations can include imaging for navigation and etching in the presence of a suitable gas. Low landing energies can be obtained by modifying a decelerator system of native FESEM equipment, or by using biasing means near the sample surface for decelerating electrons of the primary beam. At low landing energies near the operating voltage of a semiconductor circuit, voltage contrast effects can be visually seen for enhancing operator navigation. Low landing energies can be used during etching processes for minimizing the interaction volume of the beam and obtaining accurate and localized etching.Type: ApplicationFiled: November 7, 2006Publication date: August 25, 2011Applicant: FIBICS INCORPORATEDInventors: Michael William Phaneuf, Ken Guillaume Lagarec, Alexander Krechmer
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Publication number: 20110186719Abstract: An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.Type: ApplicationFiled: February 18, 2011Publication date: August 4, 2011Applicant: FIBICS INCORPORATEDInventors: Michael William PHANEUF, Ken Guillaume LAGAREC, Alexander KRECHMER
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Patent number: 7893397Abstract: An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.Type: GrantFiled: November 7, 2006Date of Patent: February 22, 2011Assignee: Fibics IncorporatedInventors: Michael William Phaneuf, Ken Guillaume Lagarec, Alexander Krechmer
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Publication number: 20080302954Abstract: An apparatus and method for using high beam currents in FIB circuit edit operations, without the generation of electrostatic discharge events. An internal partial chamber is disposed over the circuit to be worked on by the FIB. The partial chamber has top and bottom apertures for allowing the ion beam to pass through, and receives a gas through a gas delivery nozzle. A non-reactive gas, or a combination of a non-reactive gas and a reactive gas, is added to the FIB chamber via the partial chamber, until the chamber reaches a predetermined pressure. At the predetermined pressure, the gas pressure in the partial chamber will be much greater than that of the chamber, and will be sufficiently high such that the gas molecules will neutralize charging induced by the beam passing through the partial chamber.Type: ApplicationFiled: November 7, 2006Publication date: December 11, 2008Applicant: FIBICS INCORPORATEDInventors: Michael William Phaneuf, Ken Guillaume Lagarec, Alexander Krechmer