Abstract: A x-ray scanning method involves the stops of directing an x-ray beam at a collimating first mirror having the capability of altering the source to mirror location and/or grazing angle of incidence. The beam is then reflected from a flat second mirror capable of a scanning motion by linear translation with an optional accompanying angular change in the grazing angle of incidence of the beam on the second mirror.

Abstract: An x-ray lithography mask design provides for replacement of a single large area membrane with a set of smaller membranes (segments) fabricated on a single mask substrate forming a segmented mask. The segments are arranged serially so that they can be sequentially aligned and exposed by a shaped x-ray beam. Thus, the segmented mask is a series of mask membrane segments mounted together.

Abstract: Disclosed is a nondestructive optical method for detecting defects (e.g., open regions) in thin opaque or non-opaque films formed on a ceramic substrate by utilizing the inherent fluoresceability of the ceramic material. The film-clad ceramic is illuminated with an intense optical radiation consisting of at least one wavelength which corresponds to the excitation band(s) of the ceramic component responsible for fluorescence. In case of an opaque film, the incident light will reach the ceramic in regions corresponding to the defects causing these ceramic regions to fluoresce at a different wavelength than that of the incident light. The fluorescent radiation emanating from the ceramic will provide a high contrast optical image of the defects particularly when viewed through a filter which transmits only the fluorescent radiation. In case the film is non-opaque, the incident light will generate fluorescent radiation over the entire substrate--both the defective and non-defective regions.

Abstract: A method of detecting defects in a reticle used to fabricate semiconductor circuits by enhancing the image of a defect in one chip site without appreciably changing all other chip site images. In a step-and-repeat alignment system, a first chip site is exposed under normal intensities to print the reticle pattern at a proper exposure level. At a second chip site, exposure takes place using the same reticle (or a second identical reticle) at lower intensity levels. Given this underexposure, residual photoresist will remain at defect sites. The optical imagery at the two chip sites is different allowing comparator techniques to be used.

Abstract: A system for measuring the lateral displacement between edges located on two spaced apart objects, with a precision in the order of 1 microinch, generates and analyses the diffraction pattern produced by the physical edge on one object and the aerial image of the edge on the other object. The system can be used for the alignment of the objects or the comparison of patterns located on the objects.

Abstract: A spot of collimated monochromatic radiation is applied to a semiconductor wafer to obtain a diffraction pattern from two edges within an area, which is the size of the spot, on the wafer. The diffraction pattern is reflected to a photodiode array wherein the light intensity of the diffraction pattern at each of a plurality of positions is obtained. Each of the photodiodes is scanned separately for the same period of time to determine the light intensity at its location. The distance between the zero intensity positions on the photodiode array is determined very precisely and utilized with the wavelength of a laser, which supplies the spot of collimated monochromatic radiation, and the effective focal length of the lens system, which images the diffraction pattern to the photodiode array, to calculate the linear distance between the edges.