Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.

Abstract: An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.

Abstract: In at least one embodiment, the optoelectronic semiconductor component (1) comprises a cast body (4). At least one optoelectronic semiconductor chip (3) is designed to generate radiation and is situated in a recess (43) in the cast body (4). The semiconductor chip (3) has a main radiation side (30) having an edge length (L). At least one lens plate (5), which covers the recess (43), is arranged downstream of the semiconductor chip (1) in a main radiation direction (M). The lens plate (5) has a plurality of structural elements (55) on an upper side (50) that faces away from the semiconductor chip (1). The lens plate (5) has a diameter (D) that is at least 1.5 times the edge length (L). A thickness (H) of the lens plate (5) is at least 0.1 times and at most 1.5 times the diameter (D). The lens plate (5) covers the main radiation side (30) completely.

Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other, —the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

Abstract: An optical arrangement includes a multiplicity of light-emitting chips on a carrier. In this case, first light-emitting chips respectively include pixels of a first group and second light-emitting chips respectively comprise pixels of a second group. Respectively one of the first and one of the second light-emitting chips are arranged in first unit cells in a planar fashion on the carrier. Furthermore, an optical element is provided, which is disposed downstream of the light-emitting chips in the emission direction. It is designed to guide light emitted by the pixels of the first and second groups in such a way that light from the pixels of the first group and light from the pixels of the second group are combined in second unit cells in a coupling-out plane, wherein the second unit cells each have an area that is smaller than the area of each of the first unit cells.

Abstract: The invention relates to an optoelectronic device (101), comprising: —a semiconductor layer sequence (103) comprising an emitter layer (105) for emitting electromagnetic radiation, —a converter (113) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, —a scattering body (109) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer (105) in the direction of the converter (113) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body (109) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body (109) in the direction of the converter can be increased. The invention also relates to a scattering body (109).

Abstract: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) has at least one side face (31) which extends at least in places at an angle ? of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Abstract: An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 ?m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

Abstract: An optical element is provided for beam shaping for radiation emitted by a radiation-emitting semiconductor chip. The optical element includes a radiation entrance face and a boundary surface different from the radiation entrance face with a first region and a second region. The first and second regions are arranged and embodied such that a first radiation portion of radiation entering the optical element through the radiation entrance face is reflected in the first region and after reflection in the first region is deflected in the second region towards a plane defined by the radiation entrance face.

Abstract: An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.

Abstract: An optoelectronic semiconductor component is provided, having a connection carrier (2), an optoelectronic semiconductor chip (1), which is arranged on a mounting face (22) of the connection carrier (2), and a radiation-transmissive body (3), which surrounds the semiconductor chip (1), wherein the radiation-transmissive body (3) contains a silicone, the radiation-transmissive body (3) comprises at least one side face (31) which extends at least in places at an angle ? of <90° to the mounting face (22) and the side face (3) is produced by a singulation process.

Abstract: The invention relates to a method for measuring a light radiation (300) emitted by a light-emitting diode (210). In the method, an end (121) of an optical fibre (120) which is connected to a measuring device (130) is irradiated with the light radiation (300), which is emitted by the light-emitting diode (210), through an optical device (140), so that a portion of the light radiation (300) is coupled into the optical fibre (120) and is guided to the measuring device (130). The optical device (140) causes the light radiation (300) passing through the optical device (140) to be emitted in diffuse form in the direction of the end (121) of the optical fibre (120). The invention also relates to an apparatus (100) for measuring a light radiation (300) emitted by a light-emitting diode (210).

Abstract: An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier.

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.

Abstract: An optoelectronic component (1) comprises a carrier (2) and at least one semiconductor chip (3). The semiconductor chip (3) is arranged on the carrier (2) and designed for emitting a primary radiation (6). The semiconductor chip (3) is at least partly enclosed by an at least partly transparent medium (7) having a height (8) above the carrier (2) and a width (9) along the carrier (2). Particles (10, 11) are introduced into the medium (7) and interact with the primary radiation (6). The medium (7) has a ratio of the height (8) to the width (9) of greater than 1.

Abstract: An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier.

Abstract: An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.